1. Cryogenic operation of silicon detectors
- Author
-
K. Borer, V. Granata, F. Vitobello, Z. Li, T. O. Niinikoski, Hans Dijkstra, A. Esposito, O. Dormond, V. K. Eremin, P. Bartalini, M Zavrtanik, P. Chochula, G. Ruggiero, I. Stavitski, T. Ruf, P. Collins, P. Berglund, C. Da Via, W. Bell, S. Heising, L. Jungermann, F. Hauler, V.G. Palmieri, E. Grigoriev, L. Schmitt, Christopher Parkes, S. Saladino, W. De Boer, Jan Buytaert, T. J. V. Bowcock, S. Janos, I.B.M. Barnett, B. Dezillie, Carlos Lourenco, S. Paul, M. Mikuž, Vladimir Cindro, Salvatore Buontempo, Val O'Shea, E. Verbitskaya, Kevin M. Smith, S.R.H. Devine, L. Casagrande, V. Chabaud, R. Frei, and Z. Dimcovski
- Subjects
Physics ,Nuclear and High Energy Physics ,Silicon ,Physics::Instrumentation and Detectors ,Position resolution ,business.industry ,Detector ,chemistry.chemical_element ,chemistry ,Reverse bias ,Radiation damage ,Optoelectronics ,Irradiation ,business ,Instrumentation ,Diode detectors ,Silicon microstrip detectors - Abstract
This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a #uence of 3.5]1014 p/cm2 and of a p}n junction diode detector irradiated to a similar #uence. At temperatures below 130 K a recovery of charge collection e$ciency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as
- Published
- 2000