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Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures
- Source :
- IEEE Transactions on Nuclear Science. 46:228-231
- Publication Year :
- 1999
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1999.
-
Abstract
- In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of /spl sim/4/spl times/10/sup 14/ p/cm/sup 2/, no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T
- Subjects :
- Nuclear and High Energy Physics
Materials science
Passivation
Silicon
business.industry
Detector
chemistry.chemical_element
Radiation
Tracking (particle physics)
Fluence
Nuclear Energy and Engineering
chemistry
Optoelectronics
Irradiation
Detectors and Experimental Techniques
Electrical and Electronic Engineering
business
Diode
Subjects
Details
- ISSN :
- 15581578 and 00189499
- Volume :
- 46
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Nuclear Science
- Accession number :
- edsair.doi.dedup.....87f521eb77d21aa829acce24976b0317