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In this paper, we demonstrate an active 3-D millimeter wave (mmW) imaging system used for characterization of the dielectric function of different plastic materials and liquid solutions. The method is based on reflection spectroscopy at frequencies between 75 and 110 GHz, denoted as W-band, and can be used to investigate homogeneous dielectric materials such as plastics or layered structures and liquid solutions. Precise measurement of their dielectric properties not only allows for characterization and classification of different fluids, but also for reliable detection and localization of small defects such as voids or delamination within multilayer structures built from plastic materials. The radio frequency (RF) signal generation is based on circuits that have been designed and fabricated at the Fraunhofer Institute for Applied Solid State Physics (IAF) using a 100 nm InGaAs mHEMT process (Tessmann et al., 2006; Weber et al., 2011).

With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are attracting more attention. Polycrystalline SiC has first been implemented into Si micromachining techniques, mainly as etch stop and protective layers. However, the outstanding properties of wide band gap semiconductors offer many more possibilities for the implementation of new functionalities. Now, a variety of technologies for SiC and group III nitrides exist to fabricate fully wide band gap semiconductor based MEMS. In this paper we first review the basic technology (deposition and etching) for group III nitrides and SiC with a special focus on the fabrication of three-dimensional microstructures relevant for MEMS. The basic operation principle for MEMS with wide band gap semiconductors is described. Finally, the first applications of SiC based MEMS are demonstrated, and innovative MEMS and NEMS devices are reviewed. [ABSTRACT FROM AUTHOR]

Solid source molecular beam epitaxy was applied to create silicon carbide nanoclusters on silicon. The island size distribution can be controlled by appropriate substrate temperature, carbon fluxes and process times. Nevertheless, up to now the earliest stages of the carbon interaction with silicon are not well understood. To have a deeper insight into the early nucleation stages and to investigate the growth laws in such systems the kinetic Monte Carlo computer simulation method was applied. The simulation enabled us to estimate the values of the growth parameters and to obtain the cluster size distribution function and nanocluster concentration in agreement with the experimental obtained data. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

In this work, the adhesive wafer bonding of diamond thin films onto 8″ silicon substrates is reported. In order to characterize bonded nano-crystalline diamond layers, vibrometry and interferometry studies of micro-fabricated flexural beam and disk resonators were carried out. In particular, surface topology along with resonant frequencies, eigenmodes and mechanical quality factors were recorded and analyzed in order to obtain physical parameters of the transferred films. The vibration properties of the bonded resonators were compared to those fabricated directly on 3″ silicon substrates. [ABSTRACT FROM AUTHOR]

We demonstrate a highly efficient, single-step, cathodic exfoliation process of graphite to produce single- to few-layer graphene with a yield of over 70% from natural graphite flakes. By employing boron-doped diamond electrodes high potentials up to -60 V can be applied which was found to greatly increase the yield. The produced graphene flakes are partially hydrogenated during the electrochemical treatment likely aiding in their exfoliation. The resulting flakes have a large lateral size with up to 50 μm diameter. Due to the reversibility of the hydrogenation by thermal treatment the graphene flakes possess a low defect density as judged by the Raman D/G ratio yielding highly conductive films with sheet resistances of 100 to 3200 Ω □ -1 at 10 to 70% transparency., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)

Mechanical and electrical losses induced by an electrode material greatly influence the performance of bulk acoustic wave (BAW) resonators. Graphene as a conducting and virtually massless 2D material is a suitable candidate as an alternative electrode material for BAW resonators which reduces electrode induced mechanical losses. In this publication we show that graphene acts as an active top electrode for solidly mounted BAW resonators (BAW-SMR) at 2.1 GHz resonance frequency. Due to a strong decrease of mass loading and its remarkable electronic properties, graphene demonstrates its ability as an ultrathin conductive layer. In our experiments we used an optimized graphene wet transfer on aluminum nitride-based solidly mounted resonator devices. We achieved more than a triplication of the resonator's quality factor Q and a resonance frequency close to an 'unloaded' resonator without metallization. Our results reveal the direct influence of both, the graphene quality and the graphene contacting via metal structures, on the performance characteristic of a BAW resonator. These findings clearly show the potential of graphene in minimizing mechanical losses due to its virtually massless character. Moreover, they highlight the advantages of graphene and other 2D conductive materials for alternative electrodes in electroacoustic resonators for radio frequency applications.

The two-dimensional and virtually massless character of graphene attracts great interest for radio frequency devices, such as surface and bulk acoustic wave resonators. Due to its good electric conductivity, graphene might be an alternative as a virtually massless electrode by improving resonator performance regarding mass-loading effects . We report on an optimization of the commonly used wet transfer technique for large-area graphene, grown via chemical vapor deposition, onto aluminum nitride (AlN), which is mainly used as an active, piezoelectric material for acoustic devices. Today, graphene wet transfer is well-engineered for silicon dioxide (SiO₂). Investigations on AlN substrates reveal highly different surface properties compared to SiO₂ regarding wettability, which strongly influences the quality of transferred graphene monolayers. Both physical and chemical effects of a plasma treatment of AlN surfaces change wettability and avoid large-scale cracks in the transferred graphene sheet during desiccation. Spatially-resolved Raman spectroscopy reveals a strong strain and doping dependence on AlN plasma pretreatments correlating with the electrical conductivity of graphene. In our work, we achieved transferred crack-free large-area (40 × 40 mm²) graphene monolayers with sheet resistances down to 350 Ω/sq. These achievements make graphene more powerful as an eco-friendly and cheaper replacement for conventional electrode materials used in radio frequency resonator devices., Competing Interests: The authors declare no conflicts of interest.

Electrostatic self-assembly of diamond nanoparticles (DNPs) onto substrate surfaces (so-called nanodiamond seeding) is a notable technique, enabling chemical vapor deposition (CVD) of nanocrystalline diamond thin films on non-diamond substrates. In this study, we examine this technique onto differently polarized (either Al- or N-polar) c -axis oriented sputtered aluminum nitride (AlN) film surfaces. This investigation shows that Al-polar films, as compared to N-polar ones, obtain DNPs with higher density and more homogeneously on their surfaces. The origin of these differences in density and homogeneity is discussed based on the hydrolysis behavior of AlN surfaces in aqueous suspensions.

We study the spatial intensity distribution and the self-reconstruction of quasi-Bessel beams produced from refractive axicon lenses with edge emitting laser diodes as asymmetric and astigmatic illumination sources. Comparing these to a symmetric mono-mode fiber source, we find that the asymmetry results in a transition of a quasi-Bessel beam into a bow-tie shaped pattern and eventually to a line shaped profile at a larger distance along the optical axis. Furthermore, we analytically estimate and discuss the effects of astigmatism, substrate modes and non-perfect axicons. We find a good agreement between experiment, simulation and analytic considerations. Results include the derivation of a maximal axicon angle related to astigmatism of the illuminating beam, impact of laser diode beam profile imperfections like substrate modes and a longitudinal oscillation of the core intensity and radius caused by a rounded axicon tip.

Monosized (∼4 nm) diamond nanoparticles arranged on substrate surfaces are exciting candidates for single-photon sources and nucleation sites for ultrathin nanocrystalline diamond film growth. The most commonly used technique to obtain substrate-supported diamond nanoparticles is electrostatic self-assembly seeding using nanodiamond colloidal suspensions. Currently, monodisperse nanodiamond colloids, which have a narrow distribution of particle sizes centering on the core particle size (∼4 nm), are available for the seeding technique on different substrate materials such as Si, SiO2, Cu, and AlN. However, the self-assembled nanoparticles tend to form small (typically a few tens of nanometers or even larger) aggregates on all of those substrate materials. In this study, this major weakness of self-assembled diamond nanoparticles was solved by modifying the salt concentration of nanodiamond colloidal suspensions. Several salt concentrations of colloidal suspensions were prepared using potassium chloride as an inserted electrolyte and were examined with respect to seeding on SiO2 surfaces. The colloidal suspensions and the seeded surfaces were characterized by dynamic light scattering and atomic force microscopy, respectively. Also, the interaction energies between diamond nanoparticles in each of the examined colloidal suspensions were compared on the basis of the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory. From these investigations, it became clear that the appropriate salt concentration suppresses the formation of small aggregates during the seeding process owing to the modified electrostatic repulsive interaction between nanoparticles. Finally, monosized (<10 nm) individual diamond nanoparticles arranged on SiO2 surfaces have been successfully obtained.

A thermally induced functionalization process for gallium nitride surfaces with 1-alkenes is introduced. The resulting functionalization layers are characterized with atomic force microscopy and X-ray photoelectron spectroscopy and compared to reference samples without and with a photochemically generated functionalization layer. The resulting layers show very promising characteristics as functionalization for GaN based biosensors. On the basis of the experimental results, important characteristics of the functionalization layers are estimated and a possible chemical reaction scheme is proposed.

The CIP stability of pH sensitive ion-sensitive field-effect transistors based on AlGaN/GaN heterostructures was investigated. For epitaxial AlGaN/GaN films with high structural quality, CIP tests did not degrade the sensor surface and pH sensitivities of 55-58 mV/pH were achieved. Several different passivation schemes based on SiO(x), SiN(x), AlN, and nanocrystalline diamond were compared with special attention given to compatibility to standard microelectronic device technologies as well as biocompatibility of the passivation films. The CIP stability was evaluated with a main focus on the morphological stability. All stacks containing a SiO₂ or an AlN layer were etched by the NaOH solution in the CIP process. Reliable passivations withstanding the NaOH solution were provided by stacks of ICP-CVD grown and sputtered SiN(x) as well as diamond reinforced passivations. Drift levels about 0.001 pH/h and stable sensitivity over several CIP cycles were achieved for optimized sensor structures., (Copyright © 2012 Elsevier B.V. All rights reserved.)

Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10(8) cm(-2)), in the case of hydrogen-treated ND seeding particles, to very high values of 10(11) cm(-2) for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young's moduli of more than 1000 GPa.

We demonstrate a 2 μm semiconductor disk laser emitting in a single longitudinal mode with a linewidth in the <10 kHz range. A heterodyne detection scheme was used for precise linewidth measurements. In these experiments, the output beams of two identical laser cavities were superposed in order to generate a beat note signal on a photodiode. In the absence of active frequency stabilization, a linewidth of 45 kHz was measured at an output power of 100 mW. When using a frequency stabilization consisting of a feedback loop with a Fabry-Perot interferometer as wavelength reference, the linewidth could be further reduced to 9 kHz.

One-step device fabrication through the integration of nanowires (NWs) into silicon microchips is still under intensive scientific study as it has proved difficult to obtain a reliable and controllable fabrication technique. So far, the techniques are either costly or suffer from small throughput. Recently, a cost-effective method based on thin-film fracture that can be used as a template for NW fabrication was suggested. Here, a way to integrate NWs between microcontacts is demonstrated. Different geometries of microstructured photoresist formed by using standard photolithography are analyzed. Surprisingly, a very simple "stripe" geometry is found to yield highly reproducible fracture patterns, which are convenient templates for fault-tolerant NW fabrication. Microchips containing integrated Au, Pd, Ni, and Ti NWs and their suitability for studies of conductivity and oxidation behavior are reported, and their suitability as a hydrogen sensor is investigated. Details of the fabrication process are also discussed.

We report on the design and fabrication of a planar integrated free-space optical system working on the basis of binary phase diffractive optical elements (DOEs) realized in GaN on a sapphire substrate. Group III-nitride/sapphire substrates enable the parallel monolithic integration of passive microoptical elements like lenses and gratings as demonstrated here and optoelectronic devices like light emitters and photodetectors on a single wafer. We present an approach for the simultaneous optimization of the efficiency of transmissive and reflective diffractive optical elements processed in a single lithographic etching step.

Thermal cleavage processes of N-methylmorpholine-N-oxide monohydrate (NMMO) were observed in pure NMMO as well as in cellulose/NMMO solutions by ESR at temperatures of the industrial Lyocell process ( approximately 370K). Generated radicals were attributed to the alkylnitroxyl type radicals -CH(2)-NO-CH(3) in NMMO and additional (and dominated) -CH(2)-NO-CH(2)- in cellulose/NMMO solutions. Formation of both radical types formed due to NMMO ring scission is suggested.

Knowledge of tip geometry is necessary for reproducible atomic force microscope (AFM) measurements. This is particularly important for measurements in contact mode, in which a certain wear of the tip will always occur. For small or flat structures or for structures of larger dimensions, knowledge of the tip radius and the entire tip geometry is important. Additionally, the tilt of the tip in relation to the sample is of importance. Normally, very complicated lithographically manufactured structures for tip characterization are used. In contrast, the structures shown in this work are very simple. For measuring the tip geometry very thin foils patterned by focused ion beam (FIB) were used. In this work we demonstrate the possibility of determining the AFM tip geometry and the tilt based on several different large structures. A proven algorithm was developed for the reconstruction of the tips. The shape of FIB-structured foils was determined by electron microscopy prior to AFM measurements. This new method for determining tip shape is also presented as it compares to other current methods. In this case a discussion on the stability and advantages of the new method is presented.

In this work, we propose a method to estimate basic parameters like the rms roughness and the mean grain size of nanocrystalline thin films on rough substrates. The method is based on the analysis of the power spectral density (PSD) of the surface profile, which allows distinguishing between the two participating components from surface and film. The effectiveness will be demonstrated for thin NiO(x) layers for gas sensing on Al(2)O(3) ceramic substrates, and for protective WC coatings on steel.