120 results on '"O'Sullivan, B. J."'
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2. First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2.
3. Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery
4. Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics
5. Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P–V and I–V in HfO₂-Based Ferroelectric FET
6. Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric
7. Thermal recovery from stress-induced high-[kappa] dielectric film degradation
8. Ferroelectric Switching in FEFET: Physics of the Atomic Mechanism and Switching Dynamics in HfZrOx, HfO2 with Oxygen Vacancies and Si dopants
9. Defect profiling in FEFET Si:HfO2 layers
10. Investigation of Imprint in FE-HfO₂ and Its Recovery
11. Photo-Induced CVD of Tantalum Pentoxide Dielectric Films Using an Injection Liquid Source
12. Overview of Bias Temperature Instability in Scaled DRAM Logic for Memory Transistors
13. Impact of Dimensions of Memory Periphery FinFETs on Bias Temperature Instability
14. Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET
15. Reliability Engineering Enabling Continued Logic for Memory Device Scaling
16. Impact of Fin Height on Bias Temperature Instability of Memory Periphery FinFETs
17. Investigations of the intra-band Faraday effect in indium antimonide towards development of a sensitive non-interactive Faraday magnetometer
18. Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications.
19. Accelerated Device Degradation of High-Speed Ge Waveguide Photodetectors
20. Impact of self-heating on reliability predictions in STT-MRAM
21. Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown
22. Low Frequency Noise Analysis of Impact of Metal Gate Processing on the Gate Oxide Stack Quality
23. Quantification of metal oxide semiconductor field effect transistor device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics.
24. Thermally stable high effective work function TaCN thin films for metal gate electrode applications.
25. Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes.
26. Thermal recovery from stress-induced high-κ dielectric film degradation.
27. Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices
28. Familial fibrosing alveolitis
29. Irish Paediatric Association: Proceedings of the annual clinical meeting, Dublin, May 20th – 21st 1988
30. Analysis of P[sub b] centers at the Si(111)/SiO[sub 2] interface following rapid thermal annealing.
31. Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing
32. Strain enhanced low-VT CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay
33. Process-Induced Degradation of SiO$_{\bf 2}$ and a-Si:H Passivation Layers for Photovoltaic Applications
34. Correlation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions
35. Pneumococcal conjugate vaccine-induced regulatory T cells suppress the development of allergic airways disease
36. On the choice of the test structure for the electrical characterization of dielectrics for silicon solar cells
37. Streptococcus pneumoniae infection suppresses allergic airways disease by inducing regulatory T-cells
38. Quantification of metal oxide semiconductor field effect transistor device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics
39. Advanced High-k Materials and Electrical Analysis for Memories: the Role of SiO2-high-k Dielectric Intermixing
40. Defect Profiling and the Role of Nitrogen in Lanthanum Oxide-capped High-κ Dielectrics for nMOS Applications
41. Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes
42. Ubiquitous relaxation in BTI stressing—New evaluation and insights
43. Low VT CMOS using doped Hf-based oxides, TaC-based Metals and Laser-only Anneal
44. Achieving Low-$V_{T}$ Ni-FUSI CMOS by Ultra-Thin $\hbox{Dy}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicate Dielectrics
45. Charge characterization in metal-gate/high-κ layers: Effect of post-deposition annealing and gate electrode
46. Strain enhanced FUSI/HfSiON Technology with optimized CMOS Process Window
47. Nitrogen Profile and Dielectric Cap Layer (Al2O3, Dy2O3, La2O3) Engineering on Hf-Silicate
48. Work function of Ni3Si2 on HfSixOy and SiO2 and its implication for Ni fully silicided gate applications
49. A Dy2O3-capped HfO2 Dielectric and TaCx-based Metals Enabling Low-Vt Single-Metal-Single-Dielectric Gate Stack
50. Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
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