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Comprehensive Summary Key Scientists With the continuous development of photovoltaic materials, organic solar cells (OSCs) have made remarkable advancements, surpassing a power conversion efficiency (PCE) of 20%. However, the PCEs of OSCs remain lower than that of inorganic solar cells due to significant energy losses, mainly stemming from the relatively large non‐radiative recombination losses (usually be expressed as ∆E3), resulting in low open‐circuit voltages. This can be achieved by reducing non‐radiative recombination, and hereby increasing the electroluminescence quantum efficiency (EQEEL) of the photo‐active layer. This review analyzes the significance of luminescence efficiency in achieving high‐performance OSCs by examining the reciprocal relationship between ∆E3 and EQEEL. High‐efficiency organic solar cells can also be used as effective organic light‐emitting diodes (OLEDs). The discussion provides insights into the influencing factors of EQEEL and the mechanisms for adjusting various parameters, which include enhancements in photoluminescence quantum yield and the proportion of radiative excitons. The objective is to offer insights into the crucial role of luminescence performance in OSC development, guiding researchers toward developing novel photovoltaic materials or optimization strategies to enhance the luminescence performance of the active layer in OSCs, fostering the simultaneous advancement of OSCs and OLEDs. [ABSTRACT FROM AUTHOR]

Interface in perovskite solar cells (PSCs) is of vital importance because it dominates deep‐level defects and non‐radiative recombination, thus impacting both efficiency and stability further. Herein, a symmetrical acceptor–donor–acceptor (A–D–A) conjugated molecule with the core architecture of terthieno[3,2‐b hiophene and 2‐(3‐oxo‐2,3‐dihydro‐1 H‐inden‐1‐ylidene)malononitrile, named 6TIC, as a versatile buffer layer, is adopted to enhance photovoltaic performance and stability simultaneously. It is found that the conjugated molecule filling at grain boundaries and surface can not only chemically anchor with perovskite components to substantially eliminate interfacial defects and suppress detestable non‐radiative recombination, but also effectively improve the energy level alignment and facilitate charge transfer efficiency at the interface, resulting in an excellent power conversion efficiency of 24.81% with an admirable fill factor of 84.5%. Furthermore, benefiting from the unexceptionable surface protection effect of the hydrophobic buffer layer, greatly improved operational stability is delivered, with retaining 90% of initial efficiency for 960 h aging in a relative humidity of 60 ± 5% air and 1450 h aging under continuous 85 °C heating stress. This strategy may provide a new avenue for advancing high‐efficiency and stable PSCs. [ABSTRACT FROM AUTHOR]

To get maximum efficiency, potential in perovskite solar cells (PSCs) has made it hot research area now a days. Power conversion efficiency of PSCs is increasing by every passing day. Moreover, performance of perovskite absorber layer is important for high efficiency andlong term stability of PSCs. In this work, 2‐4 (Methyl sulphonyl) Phenyl) Ethylamine small molecules with functional groups are added inperovskite and enlarged grains are observed in the result. These effects show improvement in the performance of perovskite. Consequently, density of imperfections with additive in PSCs is alleviated and champion efficiency 24.16% has been achieved. Within corporation of additive with polar functional group crystallinity of absorber film is increased, that is confirmed by X‐ray diffraction and Uv‐Vis results. PL result show absorption is increased with addition ofadditive due to mitigation of nonradiative charge recombination. It is confirmed by GIWAX that charge transportation is increased since output peakintensity for (100) plane is larger than that of input. Overall, efficiencyis increased from 22% for control and exceeding 24% and stability enhanced with incorporation of small molecules. [ABSTRACT FROM AUTHOR]

Incorporating noble‐metal plasmonic nanoparticles (NPs) enhances the optoelectronic properties of perovskite solar cells (PSCs) but at a higher cost. In this work, the overlooked potential of refractory plasmonic materials is highlighted as a cost‐effective alternative additive in PSC research. This investigation aims to stimulate interest in this area by showcasing the theoretical and practical impacts of TiN plasmonic NPs when integrated into PSCs. TiN plasmonic NPs present a cost‐effective yet underexplored option. This study explores the impact of TiN NPs on PSCs through theoretical and experimental approaches. Finite‐difference time‐domain (FDTD) optical simulations and empirical data indicate that TiN NPs increase absorption and reduce reflectance in PSCs, driven by surface plasmon resonance and the significant growth of perovskite grains from 450 to 1400 nm. These NPs also regulate the perovskite crystallization rate by adsorbing DMF/DMSO, fostering larger grain formation. Improved band alignment and decreased trap states enhance charge transport and diminish non‐radiative recombination losses. As a result, PSC efficiency with optimal TiN NP concentration increased from 19.07% to 21.37%. Additionally, TiN‐enhanced PSCs display better stability, retaining 98.1% of their original PCE after 31 days under ambient conditions. [ABSTRACT FROM AUTHOR]

Perovskite solar cells have become a leading contender in next‐generation photovoltaic technologies due to their high efficiency and low‐cost potential. Managing the deep defects present effectively in the crystal lattice and at the interfaces is essential for enhancing the performance and longevity of perovskite solar cells. Here, perovskite's crystallization modulation and interfacial defect passivation are achieved by developing a guanidinium iodide (GAI)‐based surface passivation strategy. The integration of GAI passivates the grain boundaries, leading to a perovskite thin film with a smoother and more uniform grain distribution, facilitating charge carrier transport. Notably, the ammonium group, unsaturated nitrogen atoms, and iodide ions in GAI can collectively repair the surface defects of perovskite through various pathways, effectively suppressing non‐radiative recombination, thereby enhancing the photovoltaic performance of the device. Ultimately, the champion device treated with GAI achieves a power conversion efficiency (PCE) of 23.02% and demonstrates similar ambient stability under unencapsulated conditions. These findings underscore the effectiveness of GAI passivation as a strategy to balance the improvement of the performance and stability of perovskite solar cells. [ABSTRACT FROM AUTHOR]

Highlights The soft 2D material reduces the coupling strength between carriers and longitudinal optical phonons, releasing the mechanical stress of lattice vibration. The power conversion efficiency of rigid devices and flexible devices reaches 25.5% and 23.4%, respectively.

Highlights: The soft 2D material reduces the coupling strength between carriers and longitudinal optical phonons, releasing the mechanical stress of lattice vibration. The power conversion efficiency of rigid devices and flexible devices reaches 25.5% and 23.4%, respectively. This study presents experimental evidence of the dependence of non-radiative recombination processes on the electron–phonon coupling of perovskite in perovskite solar cells (PSCs). Via A-site cation engineering, a weaker electron–phonon coupling in perovskite has been achieved by introducing the structurally soft cyclohexane methylamine (CMA+) cation, which could serve as a damper to alleviate the mechanical stress caused by lattice oscillations, compared to the rigid phenethyl methylamine (PEA+) analog. It demonstrates a significantly lower non-radiative recombination rate, even though the two types of bulky cations have similar chemical passivation effects on perovskite, which might be explained by the suppressed carrier capture process and improved lattice geometry relaxation. The resulting PSCs achieve an exceptional power conversion efficiency (PCE) of 25.5% with a record-high open-circuit voltage (VOC) of 1.20 V for narrow bandgap perovskite (FAPbI3). The established correlations between electron–phonon coupling and non-radiative decay provide design and screening criteria for more effective passivators for highly efficient PSCs approaching the Shockley–Queisser limit. [ABSTRACT FROM AUTHOR]

Achieving high efficiencies in halide perovskite solar cells with thicknesses >1 µm is necessary for developing perovskite‐Si tandem cells based on small pyramidal structures. To achieve this goal, not only is the perovskite layer quality to be optimized but also the properties of the charge‐transport layers must be tuned to reduce charge‐collection losses. The transport layers provide a non‐ohmic resistance that modulates the Fermi‐level splitting inside the perovskite absorber. The finite conductivity of the transport layers can lead to losses in the fill factor (FF) and short‐circuit current, even at infinite charge‐carrier mobility in the absorber layer. These losses notably scale with the absorber layer thickness, which implies that higher‐conductivity transport layers are required for thicker perovskite absorbers. One strategy to improve charge collection and thereby FFs in thick inverted perovskite solar cells is to use bilayers of hole‐transport layers. In this study, the combination of poly[bis(4‐phenyl) (2,4,6‐trimethylphenyl)amine] with self‐assembled monolayers provides the best photovoltaic performance in single‐junction devices. [ABSTRACT FROM AUTHOR]

In this study, micro-light emitting diodes array (μLEDs) with dimensions of 5 μm and 15 μm chip size were fabricated using Neutral Beam Etching (NBE) processes. Size-dependent issues of μLEDs processed by traditional inductively coupled plasma-reactive ion etching (ICPRIE) were alleviated by NBE technology, which exhibited lower equivalent resistance, turn-on voltage, and Ideality factor as compared with those of μLEDs by ICPRIE. Additionally, higher light output power of μLEDs processed by NBE with both 5 μm and 15 μm resulted in higher EQE 7.6 % and 7.7 % than those of μLEDs processed by ICPRIE. Furthermore, the size effect led to a decrease in EQEmax values of the ICPRIE sample by 0.4 %, but only a 0.1 % decay in NBE. Overall, samples fabricated by the NBE process exhibited superior optoelectronic characteristics. Finally, non-radiative recombination behaviors on the mesa sidewall were verified by cathodoluminescence analysis, showing significant decay in ICPRIE samples but not in NBE samples. These results demonstrated the potential of the NBE process for fabricating small chip sizes blue-light μLEDs required for high-brightness, high-efficiency, and high-resolution μLED displays.

Antimony selenosulfide (Sb2(S,Se)3) solar cells bear great potential for sustainable photovoltaic technology, attributed to their excellent semiconductor properties. Despite the encouraging breakthroughs, the efficiency of Sb2(S,Se)3 solar cells still leaves much room for improvement due to the large open‐circuit voltage (VOC) deficit (the radiative VOC limit minus the high VOC). Herein, ammonium sulfide ((NH4)2S) solution is utilized to treat Sb2(S,Se)3 films to tailor their surface properties. The disappearance of the hole defect (H1) and the decrease of the defect concentration of hole defect (H2) confirm that non‐radiative recombination is suppressed greatly. Photovoltage decay lifetime is greatly increases from 67.9 to 297.9 µs. The upshifted valence band maximum optimizes the energy level alignment between the p–n heterojunction, enhancing the carrier transport. Remarkably, this treatment yields a record lowest VOC deficit of 0.49 V by now, and the best device with 10.41% efficiency, ca. 25% improvement over the control device (8.35%). This study provides valuable insight into reducing the VOC deficit in solar cells and related photoelectronic devices by minimizing non‐radiative recombination, and also presents a great potential strategy to achieve the lowest VOC deficit. [ABSTRACT FROM AUTHOR]

Perovskite solar cells have demonstrated low non‐radiative voltage losses and open‐circuit voltages (VOCs) that often match the internal voltage in the perovskite layer, i.e. the quasi‐Femi level splitting (QFLS). However, in many cases, the VOC differs remarkably from the internal voltage, for example in devices without perfect energy alignment. In terms of recombination losses, this loss often outweighs all non‐radiative recombination losses observed in photoluminescence quantum efficiency measurements by many orders of magnitude. As such, understanding this phenomenon is of great importance for further perovskite solar cell development and tackling stability issues. The classical theory developed for Si solar cells explains the QFLS‐VOC mismatch by considering the partial resistances/conductivities for majority and minority carriers. Here, the authors demonstrate that this generic theory applies to a variety of physical mechanisms that give rise to such a mismatch. Additionally, it is found that mobile ions can contribute to a QFLS‐VOC mismatch in realistic perovskite cells, and it is demonstrated that this can explain various key observations about light soaking and aging‐induced VOC losses. The findings in this paper shine a light on well‐debated topics in the community, identify a new degradation loss, and highlight important design principles to maximize the VOC for improved perovskite solar cells. [ABSTRACT FROM AUTHOR]

Due to their excellent photoelectric conversion efficiency and low preparation cost, perovskite solar cells (PSCs) have attracted much attention from researchers and developed rapidly in the past decade. However, the stability and efficiency of perovskite photovoltaic devices still need to be improved for their practical applications. It is mainly because the perovskite thin films are inevitably defective to some extent (such as points defects and extrinsic defects), leading to the occurrence of non‐radiative recombination (NRR) inside the device and at the interface, which is closely related to the stability and efficiency of perovskite materials. Therefore, exploring reliable passivation strategies is essential to overcome the adverse effects of NRR losses of such point defects. Here, this article summarizes the perovskite solar cells, including the crystal structure and calculations of electronic properties of perovskites, composition, and principles of operation of perovskite solar cells, and more importantly, different passivation strategies, including Lewis acid‐base passivation, anionic and cationic passivation, polymer passivation, and alkyl halogen ammonium passivation for the defects involved in perovskite materials. The passivation effects of these strategies and their regulation mechanisms of point defects involving perovskite materials are also presented. We also discuss the intrinsic relationship between crystal defects and device stability and look forward to feasible defect passivation strategy options for future research. [ABSTRACT FROM AUTHOR]

In this paper, a series of Cs3Cu2I5 perovskite phosphors modified with L-histidine (L-His) and 5-aminovaleric (5-Ava) acid were prepared by simple room temperature ball milling method. The phase, morphology, optical and stability properties of Cs3Cu2I5 ∶x%L-His and Cs3Cu2I5 ∶x%5-Ava(x =0, 0. 5, 1, 1. 5, 2) perovskites were analyzed. The presence of amino acids does not change the crystal structure of Cs3Cu2I5 perovskite, which still belongs to the Pnma space group. However, the introduction of amino acids affects the grain size of perovskite and effectively improves its optoelectronic properties. When x =1, the fluorescence intensity of Cs3Cu2I5 perovskite modified with L-His and 5-Ava increases by about 1. 30 and 1. 41 times compared with that of pure Cs3Cu2I5 perovskite, and the photoluminescence quantum yield (PLQY) increases by 25. 09 percentage points and 30. 47 percentage points, respectively. The fluorescence lifetime of the modified perovskites is effectively prolonged. It is found that the improvement in performance may be related to the function of amino and carboxyl groups in amino acids, which blunts the defects of perovskites and inhibits energy loss in non-radiative recombination processes. In addition, the blue light-emitting diode (LED) was prepared by Cs3Cu2I5 perovskite phosphor modified with L-His and 5-Ava acid, and the respective light efficiency is 1. 85 and 2. 10 times higher than that of pure Cs3Cu2I5 device under biased current of 70 mA, indicating that such materials have great application value in the LED field. [ABSTRACT FROM AUTHOR]

Selecting suitable charge transport layers and suppressing non‐radiative recombination at interfaces with the absorber layer is vital for maximizing the efficiency of halide perovskite solar cells. In this study, high‐quality perovskite thin films and devices are fabricated with different fullerene‐based electron transport layers and different self‐assembled monolayers as hole transport layers. Then, a comparative study of a significant variety of different electrical, optical, and photoemission‐based characterization techniques is performed to quantify the properties of the solar cells, individual layers, and, importantly, the interfaces between them. In addition, the limitations and problems of the different measurements, the insights gained by combining different methods, and the different strategies for extracting information from the experimental raw data, are highlighted. [ABSTRACT FROM AUTHOR]

In the past two decades, solution-processed bulk heterojunction organic solar cells (BHJ-OSCs) have developed rapidly, and their power conversion efficiency (PCE) has exceeded 19%, but the relatively large energy loss (Eloss) of the devices has become a bottleneck factor limiting their photovoltaic performance. Therefore, further improving the PCE of OSCs by reducing the energy loss has become the focus of research in this field. By analyzing the photophysical processes in OSCs, the mechanisms of different energy loss pathways are discussed, and the following four strategies are reviewed: (1) reducing the energy offset between donors and acceptors, (2) reducing the energy disorder, (3) improving the luminescence efficiency of the devices, and (4) reducing the reorganization energy. This paper systematically summarizes the recent progress in reducing the Eloss of non-fullerene OSCs systems, which provides an important reference for further improvement of the performance of such devices. [ABSTRACT FROM AUTHOR]

Hole-transporting layer (HTL)-free perovskite solar cells (PSCs), due to their lower cost than HTL-contained PSCs, provide a cheap photovoltaic technology to meet global energy demands. Their low efficiency, albeit, is a critical obstacle to their industrialization. In the current study, we employed propionyl chloride material as an additive for the mixed-cation perovskite precursor to reduce the bulk and surface perovskite defects and consequently boost the device's photovoltaic performance. Results show that the propionyl chloride additive caused reduced trap density within light-harvesting perovskite and suppressed non-radiative losses in the photovoltaic device. In addition, propionyl chloride improved perovskite morphology by reducing surface defects, which hinder charge accumulation centers on the perovskite interface and facilitate charge transport mechanisms. The propionyl chloride-passivated perovskite offers a champion efficiency of 14.78%, higher than the efficiency of 12.29% recorded for control hole-transport layer-free PSCs. In addition, passivated perovskites showed higher resistance against ambient degradation due to their improved crystalline properties. [ABSTRACT FROM AUTHOR]

The low cost and scalability advantages of printable mesoscopic perovskite solar cells (p‐MPSCs) are impaired by the issue of limited power conversion efficiency (PCE). Herein, the PCE of p‐MPSCs is improved by introducing the polymer additive polyacrylonitrile (PAN) into the formamidinium (FA)‐based perovskite for crystallization and defect modulation. PAN forms hydrogen bond and coordination bond with halide perovskite through its C≡N group. Such interactions improve the crystallization and filling of FA‐based perovskite in the mesoscopic scaffold and bring a long carrier lifetime by passivating defects. The synergy improves the PCE of p‐MPSCs from 16.80% to 18.33%. Meanwhile, the hydrophobic nature of PAN enhances the device's resistance against moisture. This work demonstrates that the polymer additive is a promising choice for breaking the PCE limit of p‐MPSCs. [ABSTRACT FROM AUTHOR]

Interface engineering strategy plays an essential role in improving the photovoltaic performance of perovskite solar cells (PSCs). In this study, nickel oxide (NiOx) films are fabricated by the low‐temperature combustion method and modified by poly[bis(4‐phenyl)(2,4,6‐trimethylphenyl)amine] (PTAA) solution with a low concentration. Then, NiOx and NiOx/PTAA films are used as hole transport layers to fabricate low‐dimensional perovskite (4FPEA)2(MA0.9FA0.1)3Pb4I13 (n=4) (4FPEA: 4‐fluorophenylethylammonium, MA: methylammonium, FA: formamidinum). The experimental results show that the energy level alignment has been optimized by introducing a PTAA layer, which is beneficial to improving the hole extraction efficiency. Therefore, the low‐dimensional PSC exhibit the high open‐circuit voltage (1.21 V) by suppressing the non‐radiative recombination. Compared with the PSC based on NiOx film, the power conversion efficiency of the PSC based on NiOx/PTAA film is improved from 6.13 % to 12.25 %. Meanwhile, the PSC based on NiOx/PTAA film remains at 88 % of the initial efficiency after being stored in a nitrogen glove box for 900 h. Our work offers a promising route for applying NiOx film in low‐dimensional PSCs. [ABSTRACT FROM AUTHOR]

GaN-based micro-size light-emitting diodes (µLEDs) have a variety of attractive and distinctive advantages for display, visible-light communication (VLC), and other novel applications. The smaller size of LEDs affords them the benefits of enhanced current expansion, fewer self-heating effects, and higher current density bearing capacity. Low external quantum efficiency (EQE) resulting from non-radiative recombination and quantum confined stark effect (QCSE) is a serious barrier for application of µLEDs. In this work, the reasons for the poor EQE of µLEDs are reviewed, as are the optimization techniques for improving the EQE of µLEDs. [ABSTRACT FROM AUTHOR]

Generally, the inductively coupled plasma-reactive ion etching (ICP-RIE) mesa technology was used to remove p-GaN/MQWs and expose n-GaN for electrical contact in a fabricated micro light-emitting diode (μLED). In this process, the exposed sidewalls were significantly damaged which result in small-sized μLED presenting a strong size-dependent influence. Lower emission intensity was observed in the μLED chip, which can be attributed to the effect of sidewall defect during etch processing. To reduce the non-radiative recombination, the ion implantation using an As+ source to substitute the ICP-RIE mesa process was introduced in this study. The ion implantation technology was used to isolate each chip to achieve the mesa process in the μLED fabrication. Finally, the As+ implant energy was optimized at 40 keV, which exhibited excellent current–voltage characteristics, including low forward voltage (3.2 V @1 mA) and low leakage current (10–9 A@− 5 V) of InGaN blue μLEDs. The gradual multi-energy implantation process from 10 to 40 keV can further improve the electrical properties (3.1 V @1 mA) of μLEDs, and the leakage current was also maintained at 10–9 A@− 5 V. [ABSTRACT FROM AUTHOR]

Interface properties between charge transport and perovskite light-absorbing layers have a significant impact on the power conversion efficiency (PCE) of perovskite solar cells (PSCs). Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is a polyelectrolyte composite that is widely used as a hole transport layer (HTL) to facilitate hole transport from a perovskite layer to an anode. However, PEDOT:PSS must be modified using a functional additive because PSCs with a pristine PEDOT:PSS HTL do not exhibit a high PCE. Herein, we demonstrate an increase in the PCE of PSCs with a polyethylene glycol hexadecyl ether (Brij C10)-mixed PEDOT:PSS HTL. Photoelectron spectroscopy results show that the Brij C10 content becomes significantly high in the HTL surface composition with an increase in the Brij C10 concentration (0–5 wt%). The enhanced PSC performance, e.g., a PCE increase from 8.05 to 11.40%, is attributed to the reduction in non-radiative recombination at the interface between PEDOT:PSS and perovskite by the insulating Brij C10. These results indicate that the suppression of interface recombination is essential for attaining a high PCE for PSCs. [ABSTRACT FROM AUTHOR]

Abstract Inverted perovskite solar cells (inverted‐PSCs) have exhibited advantages of longer stability, less hysteresis, and lower fabrication temperature when compared to their regular counterparts, which are important for industry commercialization. Because of the great efforts that have been conducted in the past several years, the obtained efficiency of inverted‐PSCs has almost caught up with that of the regular ones, 25.0% versus 25.7%. In this perspective, the recent studies on the design of high‐performance inverted‐PSCs based on diverse hole transport materials, as well as device fabrication and characterization are first reviewed. After that, the authors moved on to the interface and additive engineering that were exploited to suppress the nonradiative recombination. Finally, the challenges and possible research pathways for facilitating the industrialization of inverted‐PSCs were envisaged.

The influence of P3HT:PCBM ratio on thermal and transport properties of solar cells were determined by photothermal beam deflection spectrometry, which is advantageous tool for non-destructively study of bulk heterojunction layers of organic solar cells. P3HT:PCBM layers of different P3HT:PCBM ratios were deposited on top of PEDOT:PSS/ITO layers which were included in organic bulk-heterojunction solar cells. The thermal diffusivity, energy gap and charge carrier lifetime were measured at different illumination conditions and with a different P3HT:PCBM ratios. As expected, it was found that the energy band gap depends on the P3HT:PCBM ratio. Thermal diffusivity is decreasing, while charge carrier lifetime is increasing with PCBM concentration. Energy band gap was found to be independent on illumination intensity, while thermal diffusivity was increasing and carrier lifetime was decreasing with illumination intensity. The carrier lifetime exhibits qualitatively similar dependence on the PCBM concentration when compared to the open-circuit voltage of operating solar cells under AM1.5 illumination. BDS and standard I-V measurement yielded comparable results arguing that the former is suitable for characterization of organic solar cells. [ABSTRACT FROM AUTHOR]

Successful manipulation of halide perovskite surfaces is typically achieved via the interactions between modulators and perovskites. Herein, it is demonstrated that a strong‐interaction surface modulator is beneficial to reduce interfacial recombination losses in inverted (p‐i‐n) perovskite solar cells (IPSCs). Two organic ammonium salts are investigated, consisting of 4‐hydroxyphenethylammonium iodide and 2‐thiopheneethylammonium iodide (2‐TEAI). Without thermal annealing, these two modulators can recover the photoluminescence quantum yield of the neat perovskite film in contact with fullerene electron transport layer (ETL). Compared to the hydroxyl‐functionalized phenethylammonium moiety, the thienylammonium facilitates the formation of a quasi‐2D structure onto the perovskite. Density functional theory and quasi‐Fermi level splitting calculations reveal that the 2‐TEAI has a stronger interaction with the perovskite surface, contributing to more suppressed non‐radiative recombination at the perovskite/ETL interface and improved open‐circuit voltage (VOC) of the fabricated IPSCs. As a result, the VOC increases from 1.11 to 1.20 V (based on a perovskite bandgap of 1.63 eV), yielding a power conversion efficiency (PCE) from ≈20% to 21.9% (stabilized PCE of 21.3%, the highest reported PCEs for IPSCs employing poly[N,N′′‐bis(4‐butylphenyl)‐N,N′′‐bis(phenyl)benzidine] as the hole transport layer, alongside the enhanced operational and shelf‐life stability for unencapsulated devices. [ABSTRACT FROM AUTHOR]

In order to achieve the applications of the ZnO nanorod arrays in the novel nanostructured solar cells, it is necessary to tailor and control the nanorods' morphological, optical and electrical properties. The ZnO nanorods arrays were fabricated by electrodeposition. The physical properties such as the diameter, density, distance, optical band gap energy, near band emission and Stokes shift can be adjusted by the use of In(NO3)3 and NH4NO3.The characterizations such as scanning electron microscopy, X-ray diffraction spectrometer and photoluminescence were used to measure the samples' morphology, crystal property, transmission and reflection and photoluminescence properties. According to the measurement results, the ZnO nanorod arrays' density is reduced to 5.9×109 cm-2 and the distance between nanorods is enlarged to 108 nm by using NH4NO3. The nanorods' diameter is decreased to 22 nm. The use of In(NO3)3 leads to the blue shift of the ZnO nanorods' optical band gap energy by 100 meV. The optical band gap energy is further tailored between 3.41 eV and 3.55 eV by using NH4NO3. The ZnO nanorods' Stokes shift can be decreased to 19 meV by using NH4NO3, resulting in the effective suppression of the non-radiative recombination.

The role of defects in photocatalysis is rarely investigated more intuitively from the perspective of defect ionization energy (DIE), although it is the most important parameter for evaluating the depth of defect traps. Here, the crystalline poly(heptazine imide) (PHI) is adopted as an illustrative example to optimize the DIE and charge separation by regulating the carbon doping contents, ultimately activating the near-infrared photocatalytic activity. Shallow defect traps induced by doping (DIE < 25 meV) facilitate charge separation by releasing shallowly trapped carriers. In contrast, deep defect traps (DIE > 25 meV) act as non-radiative recombination centers, causing carrier quenching. More importantly, the non-radiative recombination rate in PHI is 1–2 orders of magnitude faster than the radiative recombination rate, so suppressing non-radiative recombination is more important for improving charge separation efficiency. Our work elucidates the role of defects in photocatalysis more intuitively from the perspective of DIE, and establishes a discernible relationship between DIE and photocatalytic activity. [Display omitted] • A carbon doping strategy with one stone and two birds has been proposed. • Elucidating the role of defects in photocatalysis more intuitively from the perspective of DIE. • High NIR photocatalytic activity. [ABSTRACT FROM AUTHOR]

The photovoltaic performance of C/O/S-doped hexagonal boron nitride (h-BN) quantum dots (QDs) is studied using density functional theory. Doping leads to occupied or unoccupied midgap states in h-BN QDs, resulting in a redshift in their absorption spectra. C-doping provides better charge transfer capability than S/O-doping. In addition, C-doping reduces the open-circuit voltage, light collection efficiency, fill factor, and driving forces of electron injection and reduction of h-BN QD. However, the fast non-radiative recombination deteriorates the energy conversion of C-doped h-BN QDs. The current study provides evidence for the rational design of photocatalytic devices based on h-BN QDs.

Perovskite solar cells (PSCs) have attracted wide attention due to their capacity to achieve high‐power conversion efficiencies. However, the high trap‐assisted recombination taking place in the active layer leads to performance loss in PSCs. In particular, the excessive recombination at the interface between the perovskite active layer and the carrier selective contacts can be especially problematic. Therefore, the identification of the dominant recombination pathways in a given PSC architecture is of significant importance for the mitigation of losses and enhancement of device performance. Here, we introduce an approach for identifying the dominant recombination pathways in PSCs by applying illumination‐side‐dependent impedance spectroscopy (ISD‐IS) measurements on the devices with a semi‐transparent top electrode. We validate this technique using coupled ionic‐electronic numerical simulations and apply it experimentally on a standard PSC structure. Overall, this approach could be of significant importance for pinpointing the performance bottlenecks in PSC devices under operationally relevant conditions and providing a more detailed picture of the losses in a complete PSC device by examining its behaviors under illumination from both sides at different operation conditions, which could allow for a more targeted optimization strategy of PSCs to improve their performance. [ABSTRACT FROM AUTHOR]

To enhance the fluorescence efficiency of semiconductor nanocrystal quantum dots (QDs), strategies via enhancing photo‐absorption and eliminating non‐radiative relaxation have been proposed. In this study, we demonstrate that fluorescence efficiency of molybdenum disulfide quantum dots (MoS2 QDs) can be enhanced by single‐atom metal (Au, Ag, Pt, Cu) modification. Four‐fold enhancement of the fluorescence emission of MoS2 QDs is observed with single‐atom Au modification. The underlying mechanism is ascribed to the passivation of non‐radiative surface states owing to the new defect energy level of Au in the forbidden band that can trap excess electrons in n‐type MoS2, increasing the recombination probability of conduction band electrons with valence band holes of MoS2. Our results open an avenue for enhancing the fluorescence efficiency of QDs via the modification of atomically dispersed metals, and extend their scopes and potentials in a fundamental way for economic efficiency and stability of single‐atom metals. [ABSTRACT FROM AUTHOR]

We investigated the effect of the sidewall passivation by hydrogen plasma on the InGaN green micro-LED performance. Hydrogen passivation deactivates the surface region of p-GaN around the perimeter of the device mesa. Thus, hole injection is suppressed in this region, where etching-caused material degradation results in leakage current, decreasing device efficiency. We have confirmed the hydrogen passivation effect on LED square pixels with sizes of 20 and 100 ÎĽ m. For smaller LEDs, the reverse leakage current has reduced more than tenfold, and the external quantum efficiency of LEDs was enhanced 1.4-times due to the suppression of the non-radiative recombination. [ABSTRACT FROM AUTHOR]

An effective defect passivation strategy is crucial for enhancing the performance of antimony selenosulfide (Sb 2 (S,Se) 3 ) solar cells, as it significantly influences charge transport and extraction efficiency. Herein, a convenient and novel in situ passivation (ISP) technique is successfully introduced to enhance the performance of Sb 2 (S,Se) 3 solar cells, achieving a champion efficiency of 10.81%, which is among the highest recorded for Sb 2 (S,Se) 3 solar cells to date. The first principles calculations and the experimental data reveal that incorporating sodium selenosulfate in the ISP strategy effectively functions as an in situ selenization, effectively passivating deep-level cation antisite Sb Se defect within the Sb 2 (S,Se) 3 films and significantly suppressing non-radiative recombination in the devices. Space-charge-limited current (SCLC), photoluminescence (PL), and transient absorption spectroscopy (TAS) measurements verify the high quality of the passivated films, showing fewer traps and defects. Moreover, the ISP strategy improved the overall quality of the Sb 2 (S,Se) 3 films, and fine-tuned the energy levels, thereby facilitating enhanced carrier transport. This study thus provides a straightforward and effective method for passivating deep-level defects in Sb 2 (S,Se) 3 solar cells., (© 2024 Wiley‐VCH GmbH.)

The efficacy of electron transport layers (ETLs) is pivotal for optimizing the device performance of perovskite photovoltaic applications. However, colloidal dispersions of SnO 2 are prone to aggregation and possess structural defects, such as terminal-hydroxyls (OH T ) and oxygen vacancies (V O s), which can degrade the quality of ETLs, impede charge extraction and transport, and affect the nucleation and growth processes of the perovskite layer. In this study, the Sb(OH) 4 - ions hydrolyzed from SbCl 3 in colloidal dispersion can bind to defect sites and effectively stabilize the SnO 2 nanocrystals are demonstrated. Upon oxidative annealing, a Sb 2 O 5 @SnO 2 composite film is formed, in which the Sb 2 O 5 not only mitigates the aforementioned defects but also broadens the energy range of unoccupied states through its dispersed conduction band. The increased electron affinity (EA) facilitates more efficient capture of photoexcited electrons from the perovskite layer, thus augmenting electron extraction and minimizing electron-hole recombination. As a result, a significant improvement in power conversion efficiency (PCE) from 22.60% to 24.54% is achieved, with an open circuit voltage (V OC ) of up to 1.195 V, along with excellent stability of unsealed devices under various conditions. This study provides valuable insights for the understanding and design of ETLs in perovskite photovoltaic applications., (© 2024 Wiley‐VCH GmbH.)

Non-radiative recombination losses limit the property of perovskite solar cells (PSCs). Here, a synergistic strategy of SnSe 2 QDs doping into SnO 2 and chlorhexidine acetate (CA) coating on the surface of perovskite is proposed. The introduction of 2D SnSe 2 QDs reduces the oxygen vacancy defects and increases the carrier mobility of SnO 2 . The optimized SnO 2 as a buried interface obviously improves the crystallization quality of perovskite. The CA containing abundant active sites of ─NH 2 /─NH─, ─C═N, CO, ─Cl groups passivate the defects on the surface and grain boundary of perovskite. The alkyl chain of CA also improves the hydrophobicity of perovskite. Moreover, the synergism of SnSe 2 QDs and CA releases the residual stress and regulates the energy level arrangement at the top and bottom interface of perovskite. Benefiting from these advantages, the bulk and interface non-radiative recombination loss is greatly suppressed and thereby increases the carrier transport and extraction in devices. As a result, the best power conversion efficiency (PCE) of 23.41% for rigid PSCs and the best PCE of 21.84% for flexible PSCs are reached. The rigid PSC maintains 89% of initial efficiency after storing nitrogen for 3100 h. The flexible PSCs retain 87% of the initial PCE after 5000 bending cycles at a bending radius of 5 mm., (© 2024 Wiley‐VCH GmbH.)

GaN-based micro-size light-emitting diodes (µLEDs) have a variety of attractive and distinctive advantages for display, visible-light communication (VLC), and other novel applications. The smaller size of LEDs affords them the benefits of enhanced current expansion, fewer self-heating effects, and higher current density bearing capacity. Low external quantum efficiency (EQE) resulting from non-radiative recombination and quantum confined stark effect (QCSE) is a serious barrier for application of µLEDs. In this work, the reasons for the poor EQE of µLEDs are reviewed, as are the optimization techniques for improving the EQE of µLEDs.

A recombination and exciton loss mechanism is reported in organic solar cells involving energy transfer between charge transfer (CT) excitons and polarons, impacting photocurrent generation, particularly in the near‐infrared where polaronic transitions typically reside. This process sets a low‐energy cut‐off in the external quantum efficiency spectrum of an excitonic donor/acceptor interface, determined by the low‐energy polaron absorption peak and the CT state reorganization energy. Furthermore, this process explains the deviation from unity and bias dependence of the CT state's internal quantum efficiency at low photon energies. This process is demonstrated in a variety of systems and it is hypothesized that CT state to polaron energy transfer recombination may be responsible for a share of nonradiative recombination in all organic photovoltaics and can explain numerous experimentally observed device trends regarding photocurrent generation and energy losses. Overall, this work enhances the understanding of photophysical processes in organic materials and allows the design of systems that can avoid this recombination pathway. [ABSTRACT FROM AUTHOR]

Impressive short‐circuit current density and fill factor have been achieved simultaneously in single‐junction organic solar cells (OSCs) with the emergence of high‐performance non‐fullerene acceptors. However, the power conversion efficiencies (PCEs) of OSCs still lag behind those of inorganic and perovskite solar cells, mainly due to the modest open‐circuit voltage (VOC) imposed by relatively large energy loss (Eloss). Generally, Eloss in solar cells can be divided into three parts. Among them, ΔE1 is inevitable for all photovoltaic cells and depends on the optical bandgap of solar cells, while radiative recombination energy loss, ΔE2, in OSCs can approach the negligible value via finely matching donor with acceptor material in the blend. The relatively large non‐radiative recombination energy loss, ΔE3, becomes the main barrier to further reduce Eloss and thus enhance PCE in non‐fullerene acceptor‐based OSCs. In this review, the recent studies and achievements about ΔE3 in non‐fullerene acceptor‐based OSCs have been summarized from the aspects of material design, morphology manipulation, ternary strategy, mechanism, and theoretical study. It is hoped that this review helps to get a deep understanding and boost the advance of ΔE3 study in OSCs. [ABSTRACT FROM AUTHOR]

Copyright of Acta Materiae Compositae Sinica is the property of Acta Materiea Compositae Sinica Editorial Department and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Interface properties between charge transport and perovskite light-absorbing layers have a significant impact on the power conversion efficiency (PCE) of perovskite solar cells (PSCs). Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is a polyelectrolyte composite that is widely used as a hole transport layer (HTL) to facilitate hole transport from a perovskite layer to an anode. However, PEDOT:PSS must be modified using a functional additive because PSCs with a pristine PEDOT:PSS HTL do not exhibit a high PCE. Herein, we demonstrate an increase in the PCE of PSCs with a polyethylene glycol hexadecyl ether (Brij C10)-mixed PEDOT:PSS HTL. Photoelectron spectroscopy results show that the Brij C10 content becomes significantly high in the HTL surface composition with an increase in the Brij C10 concentration (0–5 wt%). The enhanced PSC performance, e.g., a PCE increase from 8.05 to 11.40%, is attributed to the reduction in non-radiative recombination at the interface between PEDOT:PSS and perovskite by the insulating Brij C10. These results indicate that the suppression of interface recombination is essential for attaining a high PCE for PSCs.

Interfacial engineering is the key to high‐performance perovskite solar cells (PSCs). While a wide range of fullerene interlayers are investigated for Pb‐based counterparts with a bandgap of >1.5 eV, the role of fullerene interlayers is barely investigated in Sn‐Pb mixed narrow‐bandgap (NBG) PSCs. In this work, two novel solution‐processed fullerene derivatives are investigated, namely indene‐C60‐propionic acid butyl ester and indene‐C60‐propionic acid hexyl ester (IPH), as the interlayers in NBG PSCs. It is found that the devices with IPH‐interlayer show the highest performance with a remarkable short‐circuit current density of 30.7 mA cm−2 and a low deficit in open‐circuit voltage. The reduction in voltage deficit down to 0.43 V is attributed to reduced non‐radiative recombination that the authors attribute to two aspects: 1) a higher conduction band offset of ≈0.2 eV (>0 eV) that hampers charge‐carrier‐back‐transfer recombination; 2) a decrease in trap density at the perovskite/interlayer/C60 interfaces that results in reduced trap‐assisted recombination. In addition, incorporating the IPH interlayer enhances charge extraction within the devices that results in considerable enhancement in short‐circuit current density. Using a NBG device with an IPH interlayer, a respectable power conversion efficiency of 24.8% is demonstrated in a four‐terminal all‐perovskite tandem solar cell. [ABSTRACT FROM AUTHOR]

Copyright of Journal of Materials Engineering / Cailiao Gongcheng is the property of Journal of Materials Engineering Editorial Office and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Wide‐bandgap perovskites have attracted substantial attention due to their important role in serving as a top absorber in tandem solar cells (TSCs). However, wide‐bandgap perovskite solar cells (PVSCs) typically suffer from severe non‐radiative recombination loss and therefore exhibit high open‐circuit voltage (VOC) deficits. To address these issues, a 2D octyl‐diammonium lead iodide interlayer is adopted onto the hole‐transporting layer to induce the formation of an ultrathin quasi‐2D perovskite that is close to the hole‐selective interface. This approach not only accelerates hole transfer and retards hole accumulation but also reduces the trap density in the perovskite layer on top, thereby efficiently suppresses non‐radiative recombination pathways. Consequently, the champion wide‐bandgap device (≈1.66 eV) exhibits a power conversion efficiency (PCE) of 21.05% with a VOC of 1.23 V, where the VOC deficit of 0.43 V is among the lowest values for inverted wide‐bandgap PVSCs. Moreover, by stacking a semi‐transparent perovskite top cell on a 1.1 eV Cu2ZnSn(S,Se)4 (CZTSSe) bottom cell, a 22.27% PCE was achieved on a perovskite/CZTSSe four‐terminal tandem solar cell, paving the way for all‐solution‐processed, low‐cost, and efficient TSCs with mitigated energy loss in the wide‐bandgap top cells. [ABSTRACT FROM AUTHOR]

The influence of P3HT:PCBM ratio on thermal and transport properties of solar cells were determined by photothermal beam deflection spectrometry, which is advantageous tool for non-destructively study of bulk heterojunction layers of organic solar cells. P3HT:PCBM layers of different P3HT:PCBM ratios were deposited on top of PEDOT:PSS/ITO layers which were included in organic bulk-heterojunction solar cells. The thermal diffusivity, energy gap and charge carrier lifetime were measured at different illumination conditions and with a different P3HT:PCBM ratios. As expected, it was found that the energy band gap depends on the P3HT:PCBM ratio. Thermal diffusivity is decreasing, while charge carrier lifetime is increasing with PCBM concentration. Energy band gap was found to be independent on illumination intensity, while thermal diffusivity was increasing and carrier lifetime was decreasing with illumination intensity. The carrier lifetime exhibits qualitatively similar dependence on the PCBM concentration when compared to the open-circuit voltage of operating solar cells under AM1.5 illumination. BDS and standard I-V measurement yielded comparable results arguing that the former is suitable for characterization of organic solar cells.

The possibility to manufacture perovskite solar cells (PSCs) at low temperatures paves the way to flexible and lightweight photovoltaic (PV) devices manufactured via high-throughput roll-to-roll processes. In order to achieve higher power conversion efficiencies, it is necessary to approach the radiative limit via suppression of non-radiative recombination losses. Herein, we performed a systematic voltage loss analysis for a typical low-temperature processed, flexible PSC in n-i-p configuration using vacuum deposited C60 as electron transport layer (ETL) and two-step hybrid vacuum-solution deposition for CH3NH3PbI3 perovskite absorber. We identified the ETL/absorber interface as a bottleneck in relation to non-radiative recombination losses, the quasi-Fermi level splitting (QFLS) decreases from ~1.23 eV for the bare absorber, just ~90 meV below the radiative limit, to ~1.10 eV when C60 is used as ETL. To effectively mitigate these voltage losses, we investigated different interfacial modifications via vacuum deposited interlayers (BCP, B4PyMPM, 3TPYMB, and LiF). An improvement in QFLS of ~30–40 meV is observed after interlayer deposition and confirmed by comparable improvements in the open-circuit voltage after implementation of these interfacial modifications in flexible PSCs. Further investigations on absorber/hole transport layer (HTL) interface point out the detrimental role of dopants in Spiro-OMeTAD film (widely employed HTL in the community) as recombination centers upon oxidation and light exposure.

Targeted treatment of the interface between electron transport layers (ETL) and perovskite layers is highly desirable for achieving passivating effects and suppressing carrier nonradiative recombination, leading to high performance and long-term stability in perovskite solar cells (PSCs). In this study, a series of non-fullerene acceptors (NFAs, Y-H, Y-F, and Y-Cl) are introduced to optimize the properties of the perovskite/ETL interface. This optimization involves passivating Pb 2+ defects, releasing stress, and modulating carrier dynamics through interactions with the perovskite. Remarkably, after modifying with NFAs, the absorption range of perovskite films into the near-infrared region is extended. As expected, Y-F, with the largest electrostatic potential, facilitates the strongest interaction between the perovskite and its functional groups. Consequently, champion power conversion efficiencies of 21.17%, 22.21%, 23.25%, and 22.31% are achieved for control, Y-H-, Y-F-, and Y-Cl-based FA 0.88 Cs 0.12 PbI 2.64 Br 0.36 (FACs) devices, respectively. This treatment also enhances the heat stability and air stability of the corresponding devices. Additionally, these modifier layers are applied to enhance the efficiency of Cs 0.05 (FA 0.95 MA 0.05 ) 0.95 PbI 2.64 Br 0.36 (FAMA) devices. Notably, a champion PCE exceeding 24% is achieved in the Y-F-based FAMA device. Therefore, this study provides a facile and effective approach to target the interface, thereby improving the efficiency and stability of PSCs., (© 2024 Wiley‐VCH GmbH.)

Sodium (Na) doping is a well-established technique employed in chalcopyrite and kesterite solar cells. While various improvements can be achieved in crystalline quality, electrical properties, or defect passivation of the absorber materials by incorporating Na, a comprehensive demonstration of the desired Na distribution in CZTSSe is still lacking. Herein, a straightforward Na doping approach by dissolving NaCl into the CZTS precursor solution is proposed. It is demonstrated that a favorable Na ion distribution should comprise a precisely controlled Na + concentration at the front surface and an enhanced distribution within the bottom region of the absorber layer. These findings demonstrated that Na ions play several positive roles within the device, leading to an overall power conversion efficiency of 12.51%., (© 2024 Wiley‐VCH GmbH.)

Tailoring multifunctional additives for performing interfacial modifications, improving crystallization, and passivating defects is instrumental for the fabrication of efficient and stable perovskite solar cells (PSCs). Here, a Schiff base derivative, (chloromethylene) dimethyliminium chloride (CDCl), is introduced as an additive to modify the interface between the mesoporous TiO 2 electron transport layer and the MAPbI 3 light absorber during the annealing process. CDCl chemically links to TiO 2 and MAPbI 3 through coordination and hydrogen bonding, respectively, and results in the construction of fast electron extraction channels. CDCl also optimizes the energy-level alignment of the TiO 2 /MAPbI 3 heterojunction and improves the pore-filling and crystallization of MAPbI 3 in the mesoscopic scaffold, which inhibits nonradiative recombination and eliminates open-circuit voltage losses. As a result, an impressive power conversion efficiency of 19.74%, which is the best one ever reported, is obtained for printable carbon-based hole-conductor-free PSCs based on MAPbI 3 ., (© 2024 Wiley‐VCH GmbH.)

Efficient mixed metal lead‐tin halide perovskites are essential for the development of all‐perovskite tandem solar cells, however they are currently limited by significant short‐circuit current losses despite their near optimal bandgap (≈1.25 eV). Herein, the origin of these losses is investigated, using a combination of voltage dependent photoluminescence (PL) timeseries and various charge extraction measurements. It is demonstrated that the Pb/Sn‐perovskite devices suffer from a reduction in the charge extraction efficiency within the first few seconds of operation, which leads to a loss in current and lower maximum power output. In addition, the emitted PL from the device rises on the exact same timescales due to the accumulation of electronic charges in the active layer. Using transient charge extraction measurements, it is shown that these observations cannot be explained by doping‐induced electronic charges but by the movement of mobile ions toward the perovskite/transport layer interfaces, which inhibits charge extraction due to band flattening. Finally, these findings are generalized to lead‐based perovskites, showing that the loss mechanism is universal. This elucidates the negative role mobile ions play in perovskite solar cells and paves a path toward understanding and mitigating a key loss mechanism. [ABSTRACT FROM AUTHOR]

Light confinement technologies are especially effective in improving the power conversion efficiency of thin-film perovskite solar cells. For this purpose in this paper, designing an angular filter for these photovoltaic cells using nano-rough structures and index-near-zero materials is proposed. Since perovskites' energy bandgap can be easily tuned by their chemical composition, an optimal structure with typical compounds was proposed that produced the highest power conversion efficiency limit. Besides improving light confinement in the thin, perovskite active layer, the proposed structure improved the solar cell performance by enhancement of short-circuit current and open-circuit voltage through controlling radiative and non-radiative recombination. With these arrangements, an optimal power conversion efficiency limit of 40.01% has been calculated using the detailed-balance method, which indicates a 15.27% improvement compared to the original structure. The Finite-Difference Time-Domain (FDTD) method was used to demonstrate the expansion of the absorption spectrum and calculate the absorption efficiency for presenting an optimal structure design with nano-roughness for different perovskite compounds. [ABSTRACT FROM AUTHOR]

The electron donor/acceptor (D/A) heterojunction is the core for photocharge generation and recombination in organic photovoltaics (OPVs). Developing practical methods for the D/A heterojunction modification remains challenging and is rarely discussed in OPV research. Herein, the roles of molecular doping at the D/A heterojunction in the charge‐transfer exciton dissociation and detailed energy loss are investigated, and new insights are gained into the functions of doping on the OPV performance. Heterojunction doping simultaneously enhances all three OPV parameters, especially the short‐circuit current (Jsc). It is shown that the Jsc improvement is due to the combined effects of strengthened electric field and reduced activation energy, which is regulated via an entropy‐related mechanism. The performance enhancement is further demonstrated in homojunction devices showing the great potential of interfacial doping to overcome the intrinsic limitation between high Jsc and open‐circuit voltage (Voc) in OPVs. [ABSTRACT FROM AUTHOR]