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3. The stability analysis of In–Ga–ZnO thin film transistors with polyimide substrates based on Maxwell–Wagner effect

Author

Bao, Zongchi, primary, Liu, Bin, additional, Liu, Xianwen, additional, Zhang, Shuo, additional, Weng, Le, additional, Sun, Haoran, additional, Zhang, Xi, additional, Yao, Qi, additional, Yuan, Guangcai, additional, Guo, Jian, additional, Ning, Ce, additional, Shi, Dawei, additional, Wang, Feng, additional, and Yu, Zhinong, additional

Published
2024
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4. Sputtered AlOx interlayer for improving performance of a-InGaZnO TFTs: A study on hydrogen diffusion mitigation and electron modulation.

Author

Liu, Bin, Wang, Feng, Li, Xuyang, Kuang, Dan, Liu, Xianwen, Zhang, Shuo, Bao, Zongchi, Yuan, Guangcai, Guo, Jian, Ning, Ce, Shi, Dawei, and Yu, Zhinong

Subjects
THIN film transistors, EXCESS electrons, ENERGY bands, ELECTRONS, HYDROGEN
Abstract

In this study, we developed an a-InGaZnO (a-IGZO) thin film transistor (TFT) structure that inserts a sputtered AlOx intermediate layer (IL) within the active layer. The IL not only effectively blocks hydrogen (H) diffusion from the gate insulation (GI) layer to the upper region of a-IGZO but also modifies the energy band structure of the bottom channel region and creates a locally low electron concentration that counteracts the excess electron donated by diffused H. Compared to conventional TFTs, the TFT with the IL exhibits impressive electrical characteristics, including a high saturation mobility (μsat) of 14.5 cm2 V−1 s−1, an on/off current ratio (Ion/Ioff) of 6.2 × 108, and a low subthreshold swing (SS) of 0.16 V/dec. Furthermore, this structure exhibits remarkable stability under negative bias stress and negative bias illumination stress, with ΔVth values of 1.1 and 1.5 V, respectively. The integration of the IL provides a promising approach for enhancing the performance of a-IGZO TFTs, paving the way for next-generation display technologies. [ABSTRACT FROM AUTHOR]

Published
2024
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5. P‐24: Ultra‐low power consumption notebook LCD with high on‐state current metal oxide device.

Author

Ning, Ce, Wang, Dongfang, Yuan, Guangcai, Wang, Lizhong, Liu, Fengjuan, Sun, Hongda, Lu, Yuhang, He, Jiayu, Ma, Yong, Lin, Yunzhi, Zhang, Zhen, Li, Peirou, Shao, Xianjie, Gu, Honggang, Qian, Haijiao, Yang, Fan, Wang, Xianlei, Sun, Yulin, and Dong, Xue

Subjects
METALLIC oxides, UNIFORMITY, NOTEBOOKS, OXIDES
Abstract

Dual gate device with mobility of 20cm2/Vs has been applied to improve power consumption of oxide products, the devices show high on‐state current of more than 45uA, good uniformity of ΔVth 1.03V, PBTS of 2.18V. The optimized pixel design of 14inch WQXGA achieves high aperture ratio of 74% and transmittance of over 9.5%. This 120Hz demo with brightness of 150nit can significantly reduce power consumption by 65%, from 2.1W to 1.27W. [ABSTRACT FROM AUTHOR]

Published
2024
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6. P‐14: High Mobility and High Light Stability Oxide Back‐Channel‐Etched TFT and Application to High‐End LCD NB Production.

Author

Huang, Jie, Yuan, Guangcai, Li, Zhengliang, Ning, Ce, Huang, Rui, Meng, Detian, Li, Feifei, Fu, Xu, Hu, Hehe, Huang, Zhonghao, Wu, Xu, Ning, Zhiyong, Wang, Rui, and Yang, Yutong

Subjects
THERMAL stresses, TRANSISTORS, OXIDES, THIN film transistors, LIGHTING
Abstract

A high mobility (29 cm2 /Vs) and high light stability oxide thin‐film transistor (TFT) with 8 mask back channel etched (BCE) structure has been fabricated. Remarkable enhancement in negative gate‐bias thermal stress with illumination has been achieved, resulting in a threshold voltage (Vth) shift of ‐0.01 V after 1 hour. A 16.0 inch WQHD 240Hz LCD NB has been developed using high mobility and high light stability oxide TFT in G8.5. [ABSTRACT FROM AUTHOR]

Published
2024
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7. P‐17: Development of Vertical Oxide Channel Thin Film Transistor Based on Hard‐Mask Etching.

Author

Tong, Binbin, Huang, Rui, Wang, Lizhong, Zhang, Jinchao, Zhou, Tianmin, Gu, Pengfei, Ning, Ce, and Yuan, Guangcai

Subjects
THIN film transistors, SEMICONDUCTOR thin films, ETCHING, OXIDES
Abstract

Avertical oxide semiconductor thin film transistor (VTFT) with channel lengthof 0.4 μm wasdeveloped in our work. This VTFT has a small footprint, which isconducive to achieving higher resolutiom. In this work, we produced a VTFT by usinga hardmask etching process and designed different vertical structures, such asslope, hole, etc. The device achieved an on‐state current of 20.6 μA (normalized with width) and an off‐state current below 1 pA. [ABSTRACT FROM AUTHOR]

Published
2024
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17. Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO Transistors and the Underlying Mechanisms.

Author

Guo, Min, Ou, Hai, Xie, Dongyu, Zhu, Qiaoji, Wang, Mengye, Liang, Lingyan, Liu, Fengjuan, Ning, Ce, Cao, Hongtao, Yuan, Guangcai, Lu, Xubing, and Liu, Chuan

Subjects
TWO-dimensional electron gas, THIN film transistors, CHARGE carrier mobility, X-ray photoelectron spectra, TRANSISTORS, PULSED laser deposition
Abstract

High‐performance bilayer In2O3/IGZO thin‐film transistors (TFTs) fabricated by pulsed laser deposition are reported. The TFTs exhibit an on/off current ratio of 109, a reversed subthreshold slope (ss) of 0.08 V dec−1, and a high saturation mobility of 47.9 cm2 V−1 s−1. The reliability of the mobility values is critically validated and assessed by four‐probe measurements, the transfer‐length method, and the temperature‐dependence. X‐ray photoelectron spectra are combined with C–V measurements to characterize the interface, and the results show that a two‐dimensional electron gas (2DEG)‐like state accumulates at the In2O3/IGZO interface. However, this state only forms in the subthreshold region and does not cause the high carrier mobility in the region above the threshold. Instead, the enhanced carrier mobility results from the intrinsic high mobility of the In2O3, the smooth surface, and the low‐defect states in the In2O3/IGZO bilayer with a good percolation transport path. [ABSTRACT FROM AUTHOR]

Published
2023
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19. 43‐1: Invited Paper:The Application and Future Development Trend of Oxide Technology in the Meta‐Universe

Author

Ning, Ce, Wang, Lizhong, Tong, Binbin, Zhang, Jinchao, and Yuan, Guangcai

Abstract

With the rise of concept “meta‐universe”, VR/AR products get more attention currently. This paper introduces the applied oxide technology in ultra‐high resolution VR products and its future development trend. It was investigated how oxide technology become the choice of ultra‐high resolution due to its transparent property. It was also highly researched how to ensure the device characteristics with short channel through adjustment of process route. In the end, the future trend, such as higher mobility and removal of light shield layer, is simply introduces.

Published
2023
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22. 59‐4:Late‐News Paper:High Transmittance and High Charging Rate 8K 120Hz ADS LCD TV

Author

Hu, Hehe, primary, Yuan, Guangcai, additional, Gu, Zhaoyun, additional, Huang, Jianhua, additional, Ning, Ce, additional, Wang, Baoqiang, additional, Qiu, Yun, additional, Ma, Xiaocheng, additional, Liu, Liwei, additional, Liu, Rui, additional, Li, Zhengliang, additional, Shi, Guangdong, additional, Wang, Lizhong, additional, Yao, Nianqi, additional, Dong, Shuilang, additional, and Xue, Dapeng, additional

Published
2020
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23. Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor

Author

胡合合 Hu He-he, 王 路 Wang Lu, 孙建明 Sun Jian-ming, 任庆荣 Ren Qing-rong, 周婷婷 Zhou Ting-ting, 陈 宁 Chen Ning, 宁 策 Ning Ce, 李东升 Li Dong-seng, and 刘文渠 Liu Weng-qu

Subjects
Indium gallium zinc oxide, Materials science, business.industry, chemistry.chemical_element, Partial pressure, Electronic, Optical and Magnetic Materials, Indium tin oxide, chemistry, Thin-film transistor, Signal Processing, Optoelectronics, Gallium, business, Instrumentation
Published
2016

25. 59‐4: Late‐News Paper: High Transmittance and High Charging Rate 8K 120Hz ADS LCD TV.

Author

Hu, Hehe, Yuan, Guangcai, Gu, Zhaoyun, Huang, Jianhua, Ning, Ce, Wang, Baoqiang, Qiu, Yun, Ma, Xiaocheng, Liu, Liwei, Liu, Rui, Li, Zhengliang, Shi, Guangdong, Wang, Lizhong, Yao, Nianqi, Dong, Shuilang, and Xue, Dapeng

Subjects
RATES
Abstract

A 65‐inch 8K 120Hz ADS LCD TV based on novel technologies including New Oxide BCE, i‐ADS , DCT‐PS and SSD (Smart Sync Driving) , has achieved a high transmittance of 4.0% and a high charging rate of 92%. At the same time, BOE have developed the world's first 110‐inch 8K ADS‐LCD TV with 120Hz‐driven. [ABSTRACT FROM AUTHOR]

Published
2020
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27. 59‐4: Late‐News Paper:High Transmittance and High Charging Rate 8K 120Hz ADS LCD TV

Author

Hu, Hehe, Yuan, Guangcai, Gu, Zhaoyun, Huang, Jianhua, Ning, Ce, Wang, Baoqiang, Qiu, Yun, Ma, Xiaocheng, Liu, Liwei, Liu, Rui, Li, Zhengliang, Shi, Guangdong, Wang, Lizhong, Yao, Nianqi, Dong, Shuilang, and Xue, Dapeng

Abstract

A 65‐inch 8K 120Hz ADS LCD TV based on novel technologies including New Oxide BCE, i‐ADS , DCT‐PS and SSD (Smart Sync Driving) , has achieved a high transmittance of 4.0% and a high charging rate of 92%. At the same time, BOE have developed the world's first 110‐inch 8K ADS‐LCD TV with 120Hz‐driven.

Published
2020
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29. 10.4: Improvement of Stability on a‐IGZO LCD

Author

Wu, Chun Wei, primary, Yoo, Seong Yeol, additional, Ning, Ce, additional, Yang, Wei, additional, Shang, Guang Liang, additional, Wang, Ke, additional, Liu, Chien Hung, additional, Liu, Xiang, additional, Yuan, Guang Cai, additional, Chen, Jian, additional, Xu, Yubo, additional, Lee, Woobong, additional, Yu, Jian Wei, additional, and Lee, Doo Hee, additional

Published
2013
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30. Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate.

Author

Liu, Xiang, Wang, Lisa Ling, Ning, Ce, Hu, Hehe, Yang, Wei, Wang, Ke, Yoo, Seong Yeol, and Zhang, Shengdong

Subjects
THIN film transistors, INDIUM gallium zinc oxide, THRESHOLD voltage, COPPER, GATE array circuits
Abstract

The gate bias stress-induced threshold voltage shift effect of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) with Cu gate is investigated in this brief. It is revealed that the Cu-gated TFTs with SiOx gate insulator suffer from serious electrical performance degradation under gate bias stress owing to Cu diffusion into the gate insulator and channel region. A stacked gate insulator of SiOx/SiNx is then proposed to suppress the Cu diffusion. Experimental results show that the Cu-gated TFTs with the stacked gate insulators have a comparable threshold voltage shift effect with that of the conventional TFTs with Mo electrode and SiOx insulator, under both positive and negative gate bias stresses. [ABSTRACT FROM AUTHOR]

Published
2014
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