P‐14: High Mobility and High Light Stability Oxide Back‐Channel‐Etched TFT and Application to High‐End LCD NB Production.

A high mobility (29 cm2 /Vs) and high light stability oxide thin‐film transistor (TFT) with 8 mask back channel etched (BCE) structure has been fabricated. Remarkable enhancement in negative gate‐bias thermal stress with illumination has been achieved, resulting in a threshold voltage (Vth) shift of ‐0.01 V after 1 hour. A 16.0 inch WQHD 240Hz LCD NB has been developed using high mobility and high light stability oxide TFT in G8.5. [ABSTRACT FROM AUTHOR]