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Provides information on a study which discussed cross-sectional transmission electron microscope study of residual defects in BF[sup+sub2] implanted (111) silicon. Origin of the residual defects; Factors prepared for transmission electron microscope examinations; Motive for using the weak-beam dark-field technique; Considerations taken in the density of defects distributed in a band.

Presents a cross-sectional transmission electron microscope (XTM) study of solid phase epitaxial growth in boron-fluorine-implanted silicon. Usefulness of XTEM in providing data on the regrowth of implantation-amorphous layer; Activation energy for the regrowth; Uncertainties in the XTEM measurements of solid phase regrowth rate.

Presents a combined cross-sectional and plan-view transmission electron microscope study of residual defects in boron fluoride-implanted (001)silicon. Discussion on the origins of residual defects; Possible influences of residual defects on device applications; Results of the amorphization of the surface layer.

Examines some aspects of thermal reactions in aluminum/titanium bilayers in which the interface is contaminated with oxygen. Diffusion of aluminum following thermal annealing; Nucleation and lateral growth of Al[sub3]Ti at the interface; Competition between the lateral growth of Al[sub3]Ti at the interface and the diffusion of aluminum to the free surface.

Examines the effects of backsputtering and amorphous silicon capping layer on the formation of TiSi[sub2] in sputtered titanium films on silicon by rapid thermal annealing using scanning and transmission electron microscopy. Characteristics of TiSi[sub2] layer; Experimental details; Results and discussion; Conclusions.

Studies the intrinsic solid-phase epitaxial growth in self-ion-implanted silicon using a cross-sectional transmission electron microscope. Importance of the study on the kinetics of solid-phase epitaxial growth of implantation-amorphous layers in silicon; Methodology of the study; Discussion on the results of the study.

Demonstrates the feasibility of studying dynamical changes in metal/silicon and ion-implanted silicon thin films by cross-sectional transmission electron microscopy (XTEM) with intermittent annealings in N[sub2] ambient. Deposition of nickel thin films onto silicon substrates; Method used to examine XTEM specimens; Dislocations originally located in the region near the silicon surface that was consumed during NiSi[sub2] growth.

Presents a study which examined the partial epitaxial growth of hafnium silicon (HfSi)[sub 2] grown on silicon. Characteristics of refractory metal silicides; Effectiveness of two-step annealing in promoting the epitaxial growth of HfSi.

Reports on an in situ transmission electron microscopy study on the epitaxial growth of CoSi[sub2] on silicon(111) formed by codeposition of cobalt and silicon near room temperature. Preparation of the amorphous cobalt/silicon mixture; Description of the microstructure of an as-deposited film; Observations on the epitaxial growth of CoSi[sub2] from a codeposited cobalt/silicon amorphous mixture.

Presents a study that analyzed lattice distortions and their correlations to characteristics of the superconducting transitions in 123 thin films grown in situ by sequential ion beam sputtering. Methods and procedures used in the preparation of the films; Analysis of transition temperatures as a function of the c-axis lattice parameter; Expression for the line broadening due to inhomogeneous lattice distortions along the c-direction.

Provides information on the epitaxial growth of vanadium silicide on (111) silicon. Electron gun deposition of vanadium thin films; Interfacial dislocation network at epi-vanadium silicide and silicon interfaces; Difference in thermal expansion coefficients between vanadium silicide and silicon.

Resistive switching is observed in a single SnO2 nanowire device with two back-to-back Schottky diodes. The underlying mechanism can be well interpreted by the switchable diode effect, which is caused by tunable Schottky barrier heights due to the drift of charged defects induced by external electrical field. A resistance window of more than 3 orders of magnitude has been achieved. The device also shows excellent performance in endurance and retention time. Additionally, a very small current under negative bias is observed, which can avoid the sneaking current induced in the nearby devices. Due to the greatly reduced device size, power consumption, and inherent nature of Schottky diode, the work presented here should be useful for the development of high density circuitries. [ABSTRACT FROM AUTHOR]

This study investigates the formation of Ni suicides on Si1-yCy(0 ⩽ y ⩽ 0.02) epilayers grown on Si(001). The presence of C atoms retards the growth kinetics of NiSi and significantly enhances the thermal stability of NiSi thin films. In particular, an abnormal redistribution of C atoms in the NiSi thin films was observed during Ni silicidation. The NiSi layer was split into two sublayers by an obvious pileup of C atoms. This study proposes a mechanism to elucidate this phenomenon in terms of the C solubility. C atoms accumulated at the NiSi/Si1-yCy interfaces and NiSi grain boundaries may act as diffusion barriers, effectively hindering the grain growth and agglomeration of NiSi and extending the process window of low resistivity NiSi silicides [ABSTRACT FROM AUTHOR]

High-quality single-crystal nanothick Y2O3 films have been grown epitaxially on Si (111) despite a lattice mismatch of 2.4%. The films were electron beam evaporated from pure compacted powder Y2O3 target in ultrahigh vacuum. Y2O3 3 nm thick exhibited a bright, sharp, streaky reconstructed (4×4) reflection high energy electron diffraction pattern. Structural studies carried out by x-ray diffraction with synchrotron radiation and high-resolution transmission electron microscopy show that the films have the cubic bixbyite phase with a remarkably uniform thickness and high structural perfection. Two Y2O3 domains of B-type Y2O3 [211]∥Si[112] and A-type Y2O3 [211]∥Si[211] coexist in the initial film growth with B type predominating over A type in thicker films as studied using x-ray diffraction. The narrow full width at half maximum of 0.014° in the ω-rocking curve is the characteristic of excellent crystalline films. High-resolution transmission electron microscopy and fast Fourier transform analysis show atomically sharp interface and strain relaxation in thicker films. [ABSTRACT FROM AUTHOR]