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Cross-sectional transmission electron microscope study of residual defects in BF+2-implanted (001)Si.

Authors :
Nieh, C. W.
Chen, L. J.
Source :
Journal of Applied Physics. 11/1/1986, Vol. 60 Issue 9, p3114. 6p. 9 Black and White Photographs, 1 Graph.
Publication Year :
1986

Abstract

Presents a combined cross-sectional and plan-view transmission electron microscope study of residual defects in boron fluoride-implanted (001)silicon. Discussion on the origins of residual defects; Possible influences of residual defects on device applications; Results of the amorphization of the surface layer.

Details

Language :
English
ISSN :
00218979
Volume :
60
Issue :
9
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7654725
Full Text :
https://doi.org/10.1063/1.337722