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Cross-sectional transmission electron microscope study of residual defects in BF+2-implanted (001)Si.
- Source :
-
Journal of Applied Physics . 11/1/1986, Vol. 60 Issue 9, p3114. 6p. 9 Black and White Photographs, 1 Graph. - Publication Year :
- 1986
-
Abstract
- Presents a combined cross-sectional and plan-view transmission electron microscope study of residual defects in boron fluoride-implanted (001)silicon. Discussion on the origins of residual defects; Possible influences of residual defects on device applications; Results of the amorphization of the surface layer.
- Subjects :
- *TRANSMISSION electron microscopy
*BORON compounds
*SILICON
*AMORPHOUS substances
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 60
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7654725
- Full Text :
- https://doi.org/10.1063/1.337722