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7 results on '"Nie, Jiping"'

3. The fast track to canonical Wnt signaling in MC3T3-E1 cells protected by substance P against serum deprivation-induced apoptosis.

Author

Yang, Jianguo, Nie, Jiping, Fu, Su, Liu, Song, Wu, Jianqun, Cui, Liang, Zhang, Yongtao, and Yu, Bin

Subjects
*WNT signal transduction, *APOPTOSIS, *SUBSTANCE P, *STEM cells, *SERUM, *NEUROPEPTIDES
Abstract

The canonical Wnt pathway is vital to bone physiology by increasing bone mass through elevated osteoblast survival. Although investigated extensively in stem cells, its role in osteoblastic MC3T3-E1 cells has not been completely determined. To explore how this pathway is regulated by different conditions, we assessed the anti-apoptotic effects of substance P on the canonical Wnt pathway in MC3T3-E1 cells by treating cells with serum deprivation or serum starving with 'substance P,' a neuropeptide demonstrated to promote bone growth and stimulate Wnt signaling. The results showed that serum deprivation both induced apoptosis and activated Wnt signal transduction while substance P further stimulated the Wnt pathway via the NK-1 receptor but protected the cells from apoptotic death. Fast-tracking of Wnt signaling by substance P was also noted. These results indicate that nutritional deprivation and substance P synergistically activated the canonical Wnt pathway, a finding that helps to reveal the role of Wnt signaling in bone physiology affected by nutritional deprivation and neuropeptide substance P. [ABSTRACT FROM AUTHOR]

Published
2017
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4. JFET/SOS devices: processing and gamma radiation effects

Author

Liu Zhongli, Yu Fang, Nie Jiping, He Zhijing, and Li Guohua

Subjects
Materials science, business.industry, Transconductance, Transistor, Silicon on insulator, JFET, law.invention, Threshold voltage, Ion implantation, law, Optoelectronics, Irradiation, business, Radiation hardening
Abstract

A process for fabricating n-channel JFET/SOS (junction field-effect transistors on silicon-on-sapphire) has been researched. The gate p/sup +/-n junction was obtained by diffusion, and the conductive channel formed by a double ion implantation. Both enhancement and depletion mode transistors were fabricated in different processing conditions. From the results of the Co/sub 60/ /spl gamma/-ray irradiation experiments, we found that the devices had a good total dose radiation hardness. When the total dose was 5 Mrad(Si), their threshold voltages shift was less than 0.1 V. The variation of transconductance and the channel leakage current were also small.

Published
2002

5. Improvement of CMOS/SOS devices characteristics by a modified solid phase epitaxy

Author

Nie Jiping, Yu Fang, He Zhijing, Liu Zhongli, and Yu Yuanhuan

Subjects
Electron mobility, Materials science, Silicon, Annealing (metallurgy), business.industry, chemistry.chemical_element, Silicon on insulator, Hardware_PERFORMANCEANDRELIABILITY, Epitaxy, law.invention, Ion implantation, CMOS, chemistry, Hardware_GENERAL, law, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Crystallization, business
Abstract

CMOS/SOS devices have lower carrier mobility and higher channel leakage current than bulk silicon CMOS devices. These mainly result from the defects in the heteroepitaxial silicon film, especially from the defects near the Si-sapphire interface. This paper describes an experimental study of the improvement in CMOS/SOS devices characteristics resulting from improved epitaxial silicon quality which is obtained by modified solid phase epitaxy.

Published
2002

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