1. Generation of oxygen interstitials with excess in situ Ga doping in chemical bath deposition process for the growth of p-type ZnO nanowires
- Author
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Nayan Ranjan Saha, Sanatan Chattopadhyay, Rajib Saha, Anupam Karmakar, and Goutam Kumar Dalapati
- Subjects
010302 applied physics ,Materials science ,Dopant ,Doping ,Nanowire ,Analytical chemistry ,chemistry.chemical_element ,Cathodoluminescence ,Conductivity ,Condensed Matter Physics ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,chemistry ,X-ray photoelectron spectroscopy ,0103 physical sciences ,Electrical and Electronic Engineering ,Gallium ,Chemical bath deposition - Abstract
The current work focuses on the incorporation of excess amount of gallium (Ga) in zinc oxide (ZnO) nanowires to generate oxygen interstitials for developing p-type conductivity. Ga has been used as an n-type dopant in ZnO lattice by reducing its inherent vacancies up to 3% molar ratio of Ga and Zn employing chemical bath deposition technique. However, the addition of more than 4% of gallium nitrate in the bath solution creates oxygen interstitials which are confirmed from the presence of X-ray photoelectron spectroscopy (XPS) peak at 532.6 eV and the relevant cathodoluminescence (CL) peak at 626 nm of the grown Ga-doped ZnO nanowires. The p-type conductivity of such ZnO nanowires has been confirmed from current–voltage, capacitance–voltage and Hall voltage measurements. The reproducibility of the results indicates the incorporation of excess Ga to be a promising technique for growing p-type ZnO nanowires.
- Published
- 2019
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