Search

MoSi2N4 is a two-dimensional ternary nitride semiconductor that has attracted attention for its excellent mechanical and thermal properties. Theoretical studies predict that zigzag edges of this material can host magnetic edge states and Dirac fermions, but the stability of such edges has not been examined. Here, we present a density functional theory study of the electronic and thermodynamic properties of MoSi2N4 edges. We develop a (partial) ternary phase diagram that identifies a region of chemical potentials within which MoSi2N4 is stable over competing elemental or binary phases. Based on this phase diagram, we determine the thermodynamic stability of several armchair and zigzag edges and elucidate their electronic structures. Bare zigzag edges, predicted to host exotic electronic states, are found to be substantially higher in energy than armchair edges and, thus, unlikely to occur in practice. However, with hydrogen passivation, these zigzag edges can be stabilized relative to their armchair counterparts while retaining metallicity and magnetic order. Our analysis provides a solid thermodynamic basis for further exploration of MoSi2N4 in nanoscale electronics and spintronics. [ABSTRACT FROM AUTHOR]

MoSi2N4 is a two-dimensional ternary nitride semiconductor that has attracted attention for its excellent mechanical and thermal properties. Theoretical studies predict that zigzag edges of this material can host magnetic edge states and Dirac fermions, but the stability of such edges has not been examined. Here, we present a density functional theory study of the electronic and thermodynamic properties of MoSi2N4 edges. We develop a (partial) ternary phase diagram that identifies a region of chemical potentials within which MoSi2N4 is stable over competing elemental or binary phases. Based on this phase diagram, we determine the thermodynamic stability of several armchair and zigzag edges and elucidate their electronic structures. Bare zigzag edges, predicted to host exotic electronic states, are found to be substantially higher in energy than armchair edges and, thus, unlikely to occur in practice. However, with hydrogen passivation, these zigzag edges can be stabilized relative to their armchair counterparts while retaining metallicity and magnetic order. Our analysis provides a solid thermodynamic basis for further exploration of MoSi2N4 in nanoscale electronics and spintronics. [ABSTRACT FROM AUTHOR]

We introduce an allostery-mimetic building block model for the self-assembly of 3D structures. We represent the building blocks as patchy particles, where each binding site (patch) can be irreversibly activated or deactivated by binding of the particle's other controlling patches to another particle. We show that these allostery-mimetic systems can be designed to increase yields of target structures by disallowing misassembled states and can further decrease the smallest number of distinct species needed to assemble a target structure. Next, we show applications to design a programmable nanoparticle swarm for multifarious assembly: a system of particles that stores multiple possible target structures and a particular structure is recalled by presenting an external trigger signal. Finally, we outline a possible pathway for realization of such structures at nanoscale using DNA nanotechnology devices. [ABSTRACT FROM AUTHOR]

Beyond von Neumann's architecture, artificial neural network-based neuromorphic computing in a simple two-terminal resistive switching device is considered the future potential technology for simultaneous data processing and storage. These are also compatible with low-power consumption nanoelectronic devices and, thus, suitable for applications such as image recognition toward solving complex pattern recognition problems. Herein, motivated by the human biological brain, we successfully synthesized low-cost RRAM devices using the thermal oxidation of Cu, i.e., CuO as the active material together with Cu as the top electrode and FTO as the bottom contact for a two-terminal resistive switching device, and investigated characteristics for neuromorphic computing. Cu/CuO/FTO-based devices showed excellent bipolar analog RRAM characteristics with 150 repeatable cycles, retention for 11 000 s, and DC pulse endurance for 5000 cycles. Moreover, devices exhibit a remarkable mimicking ability, demonstrating spike time-dependent plasticity (STDP), pulse-paired facilitation (PPF), synaptic weight, and learning and forgetting characteristics, substantiating the recognition ability. Furthermore, the artificial neural network synaptic membrane exhibits excellent long-term (LTP) and short-term (STP) potentiation for six consecutive cycles. Thus, the present work on Cu/CuO/FTO-based devices provides a detailed understanding of CuO active material-based resistive switching with a potential for neuromorphic computing beyond the von Neumann architecture. [ABSTRACT FROM AUTHOR]

Molecular field-coupled nanocomputing (molFCN) encodes information in the molecule charge distribution and elaborates it through electrostatic coupling. Despite the advantageous sub-nanometric size and low-power dissipation, only a few attempts have been made to validate the technology experimentally. One of the obstacles is the difficulty in measuring molecule charges to validate information encoding or integrate molFCN with complementary-metal-oxide-semiconductor (CMOS). In this work, we propose a paradigm preserving the advantages of molFCN, which exploits the position of waiving molecules to augment the information encoding. We validate the paradigm, named bend-boosted molFCN, with density functional theory using 6-(ferrocenyl)hexanethiol cations. We demonstrate that the encoded information can be electrically read by constituting a molecular junction. The paradigm is compatible with the charge-based molFCN, thus acting as a readout system. The obtained results favor the experimental assessment of the molFCN principle through scanning probe microscopy techniques and the design of molFCN-CMOS heterogeneous circuits. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) semiconductors have attracted much attention regarding their use in flexible electronic and optoelectronic devices, but the inherent poor electron mobility in conventional 2D materials severely restricts their applications. Using first-principles calculations in conjunction with Boltzmann transport theory, we systematically investigated the Si-doped 2D β-Ga2O3 structure mediated by biaxial strain, where the structural stabilities were determined by formation energy, phonon spectrum, and ab initio molecular dynamic simulation. Initially, the band gap values of Si-doped 2D β-Ga2O3 increased slightly, followed by a rapid decrease from 2.46 eV to 1.38 eV accompanied by strain modulations from −8% compressive to +8% tensile, which can be ascribed to the bigger energy elevation of the σ* anti-bonding in the conduction band minimum than that of the π bonding in the valence band maximum. Additionally, band structure calculations resolved a direct-to-indirect transition under the tensile strains. Furthermore, a significantly high electron mobility up to 4911.18 cm2 V−1 s−1 was discovered in Si-doped 2D β-Ga2O3 as the biaxial tensile strain approached 8%, which originated mainly from the decreased quantum confinement effect on the surface. The electrical conductivity was elevated with the increase in tensile strain and the enhancement of temperature from 300 K to 800 K. Our studies demonstrate the tunable electron mobilities and band structures of Si-doped 2D β-Ga2O3 using biaxial strain and shed light on its great potential in nanoscale electronics. [ABSTRACT FROM AUTHOR]

Protein–polymer conjugates and polymeric nanomaterials hold great promise in many applications including biomaterials, medicine, or nanoelectronics. In this work, the first polymerization‐induced self‐assembly (PISA) approach performed in aqueous medium enabling protein–polymer conjugates and nanoparticles entirely composed of amino acids is presented by using ring‐opening polymerization (ROP). It is indeed shown that aqueous ring‐opening polymerization‐induced self‐assembly (ROPISA) can be used with protein or peptidic macroinitiators without prior chemical modification and afford the simple preparation of nanomaterials with protein‐like property, for example, to implement biomimetic thermoresponsivity in drug delivery. [ABSTRACT FROM AUTHOR]

Electronic characterization of bio-molecular nanoscale devices is important in the new edge of nanotechnology and the field of nanoelectronics. In this new era, the molecular transmission properties of the Adenine bio-molecular optical switch are predicted using Density Functional Theory along with Non-Equilibrium Green's Function-based First Principle approach and this phenomenon is supported with Machine Learning based algorithms. The photo-induced switching characteristics are observed for the bi-directional bio-molecular switch for both forward and reverse bias conditions. This switching behaviour converts the position of the bio-molecular switch to its straightened and 60° twisted form. The electrical doping process plays an important role in generating p and n regions at the two ends of the switch. In this experiment, gold electrodes are used as the supporting anchor of the Adenine molecules. The HOMO–LUMO gap and I–V characteristics of the bio-molecular switch are analyzed using first principle formalisms and compared with the Machine learning approach. This ML approach helps design the future-generation prediction model for the nano-scale electronic device simulation process. This prediction model can be obtained without knowing the switching characteristics and also without knowing all-time sequence generating waveforms but only observing the waveform prediction for up to a certain period sequence. [ABSTRACT FROM AUTHOR]

In this study, a numerical model for electro-mechanical coupling analysis of geometrically nonlinear functionally graded piezoelectric shell is developed based on the weak form quadrature element method. Both piezoelectric and flexoelectric effects are introduced to establish the geometrically exact shell model with its constituent BaTiO3 and PZT-5H graded through the thickness. The electric potentials are assumed quadratic along the shell thickness to introduce the electric field for numerical implementation, while four different closed- or open-circuit conditions are considered. Four typical examples are presented to demonstrate the effectiveness of the present model and illustrate the influences of electro-mechanical couplings and functional graded materials on the responses of shells undergoing large displacements and rotations. This model is a feasible scheme for studying complex nonlinear behaviors of piezoelectric shells that might be helpful in devising piezoelectric shell-based nanoelectronics. [ABSTRACT FROM AUTHOR]

[Display omitted] Aligned carbon nanotubes (A-CNTs) have been demonstrated to be promising materials for constructing advanced complementary metal–oxide–semiconductor (CMOS) field-effect transistors (FETs) for future integrated circuits (ICs). However, the requirements of A-CNT materials from the perspective of IC applications, such as the distributions of length, alignment, diameter and density of CNTs, have not been explicitly researched or mentioned before. In this article, we review the progress on CNT electronics and electronic-grade materials and establish material criteria for A-CNTs applicable to advanced electronics according to the developing roadmap of CNT-based ICs. Specifically, electrical performance predictions for A-CNT CMOS FETs at various technology nodes are built based on a theoretical model and experimental results, and then, the criteria for ideal A-CNTs are outlined by evaluating the energy-delay product (EDP) advantage of CNT FETs over similar node commercial silicon (Si)-based CMOS transistors. The fine requirements for A-CNT materials are estimated for 90 nm, 22 nm, 7 nm, and 3 nm node CNT CMOS FETs, which present significant advantages in terms of energy efficiency over Si CMOS transistors. The criteria will guide the development of CNT materials for future ICs and provide a comprehensive assessment of the opportunities and challenges in CNT electronics. [ABSTRACT FROM AUTHOR]

Twisted 2D bilayers of van der Waals materials, a new class of quantum materials, offer pioneering advances in the field of nanoelectronics and photonics. As these layered materials can have various preferential stacking configurations with varying electronic behavior, it is important to have a characterization technique that can unambiguously probe the stacking order and interlayer interactions in 2D materials and twisted 2D homobilayers. In this work, we show that by using Raman spectroscopy, we can probe variations in the interlayer coupling of bilayer WSe 2 stacked at different twist angles. The interlayer interactions are weakest at a twist angle of 30 ° , and the twisted bilayer system is almost equivalent to two decoupled monolayers of WSe 2. Also we demonstrate Raman mapping as a quick imaging tool with capabilities of clear distinction between 2H and 3R polytypes of bilayer WSe 2 and can be used to study various kirigami structures and bilayer nucleation centers commonly observed during chemical vapor deposition-based growth of WSe 2. This work proves to be beneficial in the characterization of twisted bilayers of 2D materials and offer key insights into the optoelectronic properties of 2D materials and heterostructures. [ABSTRACT FROM AUTHOR]

Twisted 2D bilayers of van der Waals materials, a new class of quantum materials, offer pioneering advances in the field of nanoelectronics and photonics. As these layered materials can have various preferential stacking configurations with varying electronic behavior, it is important to have a characterization technique that can unambiguously probe the stacking order and interlayer interactions in 2D materials and twisted 2D homobilayers. In this work, we show that by using Raman spectroscopy, we can probe variations in the interlayer coupling of bilayer WSe 2 stacked at different twist angles. The interlayer interactions are weakest at a twist angle of 30 ° , and the twisted bilayer system is almost equivalent to two decoupled monolayers of WSe 2. Also we demonstrate Raman mapping as a quick imaging tool with capabilities of clear distinction between 2H and 3R polytypes of bilayer WSe 2 and can be used to study various kirigami structures and bilayer nucleation centers commonly observed during chemical vapor deposition-based growth of WSe 2. This work proves to be beneficial in the characterization of twisted bilayers of 2D materials and offer key insights into the optoelectronic properties of 2D materials and heterostructures. [ABSTRACT FROM AUTHOR]

A novel technique for creating logic gates and digital circuitry at the nanoscale is quantum cellular automata (QCA). The sensitivity of the circuit is enhanced and quantum circuits are more susceptible to unfavorable external conditions when component size are reduced. In this article, we offer a five-input majority gate with fault-tolerant feature in QCA technology, taking into account the significance of constructing circuits that can withstand flaws. We also assess all potential defects in the process of arranging cells in specific locations on the surface. These errors consist of extra cells, rotation, deletion, and displacement. The gate under study is subjected to the aforementioned four failure categories in the first stage. The QCADesigner simulator engine is then used to assess the accuracy of the circuit performance in the second step. 41 quantum cells have been used to make the gate of this five-input majority gate with fault-tolerant feature in QCA technology. Several techniques are explored to discover such a majority gate, such as adding cells (i.e., introducing redundancy into the circuit) and particular cell layout techniques. The goal is to come up with a design that can ideally withstand possible faults with the least amount of overhead on the circuit for fault-tolerant through a certain cell layout. The findings demonstrate the implemented majority gate's notable advantage over comparable scenarios.

Abstract Phosphorene is a unique semiconducting two-dimensional platform for enabling spintronic devices integrated with phosphorene nanoelectronics. Here, we have designed an all phosphorene lattice lateral spin valve device, conceived via patterned magnetic substituted atoms of 3d-block elements at both ends of a phosphorene nanoribbon acting as ferromagnetic electrodes in the spin valve. Through First-principles based calculations, we have extensively studied the spin-dependent transport characteristics of the new spin valve structures. Systematic exploration of the magnetoresistance (MR) of the spin valve for various substitutional atoms and bias voltage resulted in a phase diagram offering a colossal MR for V and Cr-substitutional atoms. Such MR can be directly attributed to their specific electronic structure, which can be further tuned by a gate voltage, for electric field controlled spin valves. The spin-dependent transport characteristics here reveal new features such as negative conductance oscillation and switching of the sign of MR due to change in the majority spin carrier type. Our study creates possibilities for the design of nanometric spin valves, which could enable integration of memory and logic elements for all phosphorene 2D processors.

Abstract Extensive research is now being conducted on the design and construction of logic circuits utilizing quantum-dot cellular automata (QCA) technology. This area of study is of great interest due to the inherent advantages it offers, such as its compact size, high speed, low power dissipation, and enhanced switching frequency in the nanoscale domain. This work presents a design of a highly efficient RAM cell in QCA, utilizing a combination of a 3-input and 5-input Majority Voter (MV) gate, together with a 2 × 1 Multiplexer (MUX). The proposed design is also investigated for various faults such as single cell deletion, single cell addition and single cell displacement or misalignment defects. The circuit under consideration has a high degree of fault tolerance. The functionality of the suggested design is showcased and verified through the utilization of the QCADesigner tool. Based on the observed performance correlation, it is evident that the proposed design demonstrates effectiveness in terms of cell count, area, and latency. Furthermore, it achieves a notable improvement of up to 76.72% compared to the present configuration in terms of quantum cost. The analysis of energy dissipation, conducted using the QCAPro tool, is also shown for various scenarios. It is seen that this design exhibits the lowest energy dispersion, hence enabling the development of ultra-low power designs for diverse microprocessors and microcontrollers.

This paper introduces a Ferro technique in the junctionless vertical tunnel field effect transistor in which the ferroelectric property in the HfO2 is developed with the help of Silicon doping in it. The incorporation of the ferroelectric oxide stacking with SiO2 results in low sub-threshold slope and high trans-conductance which is highly suitable for sensing of small voltage and converting it into strong drain current. The introduction of the high k-dielectric material with SiO2 also leads to small lattice mismatch so that the losses can be reduced. The device shows ON current in the order of (2.62 × 10−4A/μm) and the ratio of the ON to OFF drain current is noted as (of 2.031 × 1010). Moreover, the device exhibits sub-threshold slope 35mV/dec and the ratio of trans-conductance to drain current (gm/ID) in the range of 150–350V−1. Then the design structure is used to develop the circuit of multiple input converters (MIC) because the device shows high conversion rate (trans-conductance). For the converter, State-space analysis is used for the modeling of converter which was further followed with the design of converters’ energy storing apparatus with its voltage gain formulation. Interaction analysis is used to create a decentralized controller. The controllers’ robustness is tested using parametric uncertainty. A 175-watt experimental archetype with 36 volt and 24-volt sources is developed in the lab. The digital controller was implemented using the processor. The efficacy of controllers for regulating sources and loads has been verified. The controller’s strength is ensured by the satisfactory correlation between simulation and investigational results. For the result outcome one can validate Silicon Doped Ferro Gate Stacking JL-VTFET results for low power applications. [ABSTRACT FROM AUTHOR]

In this work, we demonstrated that tunable topological domain structures, e.g., center-type domains and skyrmion-like polar bubbles, can be generated at room temperature in high-density epitaxial PbTiO3 nanodots fabricated via the template-assisted tailoring of thin films. These topological domain structures can be manipulated electrically by applying an appropriate bias on the conductive atomic force microscopy tip, allowing for writing, erasing, and rewriting of topological domains into the nanodot. Moreover, ring-shaped conductive channels are observed around the center-type domain states. These findings provide a playground for further exploring their emerging functionalities and application potentials for nanoelectronics. [ABSTRACT FROM AUTHOR]

Copolymers based on vinylidene fluoride are potential materials for ferroelectric memory elements. The trend in studies showing that a decrease in the degree of crystallinity can lead to an unexpected increase in the electric breakdown field is noted. An analysis of the literature data reveals that in fluorine-containing ferroelectric polymers, when using a bipolar triangular field, the hysteresis loop has an unclosed shape, with each subsequent loop being accompanied by a decrease in the dielectric response. In this work, the effect of the structure of self-polarized films of copolymers of vinylidene fluoride with tetrafluoroethylene and hexafluoropropylene on breakdown processes was studied. The structure of the polymer films was monitored using infrared spectroscopy (IR) and X-ray diffraction. Kelvin probe force microscopy (KPFM) was applied to characterize the local electrical properties of the polymers. For the films of the first copolymer, which crystallize in the polar β-phase, asymmetry in the dielectric response was observed at fields greater than the coercive field. For the films of the copolymers of vinylidene fluoride with hexafluoropropylene, which crystallize predominantly in the nonpolar α-phase, polarization switching processes have also been observed, but at lower electric fields. The noted phenomena will help to identify the influence of the structure of ferroelectric polymers on their electrical properties. [ABSTRACT FROM AUTHOR]

Structured illumination microscopy (SIM), an advanced super-resolution methodology, transcends the traditional diffraction limit inherent in optical imaging. This technique utilizes standing-wave illumination generated through the interplay of two obliquely incident light waves. The intrinsic resolution constraint of SIM, traditionally pegged at half the wavelength because of the standing wave's periodicity, has the potential for enhancement by integrating high spatial frequency illumination patterns, particularly when sourced in the near-field of plasmonic nanostructures. The present study introduces and computationally validates a novel, easily fabricated substrate composed of self-assembled gold nanoparticles designed explicitly for generating these high spatial frequency patterns. Addressing the necessity for diverse patterns in reconstructing super-resolution imagery within plasmonic SIM, this research conducted extensive numerical simulations of nanoparticle arrays under varying illumination scenarios. This undertaking affirmed the feasibility of manipulating high-frequency patterns. Super-resolution reconstruction was actualized by applying Blind-SIM techniques, which verified its effectiveness. This innovative approach notably achieved a resolution threshold of 60 nm, markedly exceeding the conventional 150 nm diffraction barrier and surpassing the 75 nm resolution typically observed in standard SIM applications. Highlights: Use a self-assembled nanoparticle plasmonic substrate as structured illumination. Numerical demonstration of super-resolution imaging. Considerable improvement in resolution threshold, exceeding standard SIM. [ABSTRACT FROM AUTHOR]

This paper investigates the performance of vacuum gate dielectric doping-free carbon nanotube/nanoribbon field-effect transistors (VGD-DL CNT/GNRFETs) via computational analysis employing a quantum simulation approach. The methodology integrates the self-consistent solution of the Poisson solver with the mode space non-equilibrium Green's function (NEGF) in the ballistic limit. Adopting the vacuum gate dielectric (VGD) paradigm ensures radiation-hardened functionality while avoiding radiation-induced trapped charge mechanisms, while the doping-free paradigm facilitates fabrication flexibility by avoiding the realization of a sharp doping gradient in the nanoscale regime. Electrostatic doping of the nanodevices is achieved via source and drain doping gates. The simulations encompass MOSFET and tunnel FET (TFET) modes. The numerical investigation comprehensively examines potential distribution, transfer characteristics, subthreshold swing, leakage current, on-state current, current ratio, and scaling capability. Results demonstrate the robustness of vacuum nanodevices for high-performance, radiation-hardened switching applications. Furthermore, a proposal for extrinsic enhancement via doping gate voltage adjustment to optimize band diagrams and improve switching performance at ultra-scaled regimes is successfully presented. These findings underscore the potential of vacuum gate dielectric carbon-based nanotransistors for ultrascaled, high-performance, energy-efficient, and radiation-immune nanoelectronics. [ABSTRACT FROM AUTHOR]

Complex coacervation, a fascinating phenomenon rooted in liquid–liquid phase separation, plays a crucial role in numerous biological systems. This intricate process involves the segregation of a liquid into two distinct phases: a coacervate phase enriched with polymers and a polymer-deficient phase comprising the remaining dilute solution. The potential of coacervates extends beyond their natural occurrence in biological systems, as they possess the capability to encapsulate various types of biomolecules in an aqueous solution, obviating the need for organic solvents. Consequently, considerable efforts have been devoted to designing functional nanoscale coacervate-driven assemblies using both natural and synthetic polymers for a myriad of applications. In this review, we provide a synthesis and discussion of the formation of nanoscale polymeric assemblies driven by complex coacervation. This exploration delves into the fundamental driving forces underpinning the phenomenon and elucidates the diverse fabrication strategies employed. The various biomedical applications of these assemblies are highlighted, with a focus on their roles as drug carriers, gene delivery vehicles, antimicrobial agents, theranostic platforms, mucoadhesives, and nanoreactors. This review aims to contribute to a deeper understanding of coacervation-driven nanoscale assembly systems and their potential impact on the field of biomedical science and technology. [ABSTRACT FROM AUTHOR]

This study improves and expands the scope of application of the theoretical model previously proposed by the authors, which describes the relationship between the strength and electromigration (diffusion) properties of interfaces formed by connected materials. In the developed model, a linear relationship is established between the values of the work of reversible interface separation and electromigration activation energy in the interface. Estimates are made and the coefficients of the resulting relation are compared with experiments studying electromigration in a copper conductor coated with a protective dielectric. Using also the model previously developed by the authors, which describes the dependence of the quantity on the concentrations of nonequilibrium lattice defects presenting in the volumes of connected materials, a number of effects due to the influence of such defects on processes caused by electromigration are predicted and studied. This study shows that by introducing nonequilibrium lattice defects in the form of atomic interstitial or substitutional impurities into the volumes of the joined materials, we can effectively influence on the characteristics of the electromigration instability of the shape of the interlayer boundary. For interstitial impurities, quantitative analytical estimates of the impurity concentration required to significantly change (both increase and decrease) the characteristic growth time of the instability of the shape of an initially flat interface are performed. [ABSTRACT FROM AUTHOR]

This review paper presents an overview of the optical characterization techniques for Indium Gallium Nitride (InGaN) quantum well (QW) structures at a nanoscale. The two major techniques are reviewed—Electron Microscopy‐Cathodoluminescence (EM‐CL) and Scanning Near‐field Optical Microscopy (SNOM). It elucidates the critical role these methodologies play in revealing the complex properties of InGaN QWs, including their structural characteristics, optical properties, carrier dynamics, and the effects of defects and doping. The review highlights key findings from a variety of studies, demonstrating how EM‐CL and SNOM have contributed to the understanding of these micro‐/nano‐ structures and their potential applications in high‐efficiency optoelectronic devices. [ABSTRACT FROM AUTHOR]

Two-dimensional hafnium-based semiconductors and their heterostructures with native oxides have been shown unique physical properties and potential electronic and optoelectronic applications. However, the scalable synthesis methods for ultrathin layered hafnium-based semiconductor laterally epitaxy growth and its heterostructure are still restricted, also for the understanding of its formation mechanism. Herein, we report the stable sublimation of alkali halide vapor assisted synthesis strategy for high-quality 2D HfSe2 nanosheets via chemical vapor deposition. Single-crystalline ultrathin 2D HfSe2 nanosheets were systematically grown by tuning the growth parameters, reaching the lateral size of 6–40 µm and the thickness down to 4.5 nm. The scalable amorphous HfO2 and HfSe2 heterostructures were achieved by the controllable oxidation, which benefited from the approximate zero Gibbs free energy of unstable 2D HfSe2 templates. The crystal structure, elemental, and time dependent Raman characterization were carried out to understand surface precipitated Se atoms and the formation of amorphous Hf–O bonds, confirming the slow surface oxidation and lattice incorporation of oxygen atoms. The relatively smooth surface roughness and electrical potential change of HfO2–HfSe2 heterostructures indicate the excellent interface quality, which helps obtain the high performance memristor with high on/off ratio of 105 and long retention period over 9000 s. Our work introduces a new vapor catalysts strategy for the synthesis of lateral 2D HfSe2 nanosheets, also providing the scalable oxidation of the Hf-based heterostructures for 2D electronic devices. [ABSTRACT FROM AUTHOR]

At least 16 bulk polymorphs of linked icosahedrons exist in boron that are not found in other materials, due to the low covalent radius and sp² hybridization capacity of boron atoms. One of them is borophene, an exciting new nanomaterial with a wide range of possible energy uses. The existence of borophene, a two-dimensional (2D) material, has been proven by both theoretical and experimental studies. Borophene's high magnetic conductivity, theoretical specific capacities, and ion transport properties make it a promising candidate in energy applications (EAs). In this study, firstly, the structure, chemical, and physical properties of borophene were mentioned. Then, in terms of synthesis approaches, both top-down and bottom-up techniques such as ultrahigh vacuum (UHV), chemical vapor deposition (CVD), exfoliation by sonochemistry (ExS), molecular beam epitaxy (MBE) and multi-step thermal decomposition (MTD) were discussed. Finally, its use as a catalyst in high-metal-ion batteries, hydrogen storage (HS), nanoelectronics applications hydrogen evolution reaction (HER) was mentioned. [ABSTRACT FROM AUTHOR]

The processes of formation of a thin film of cobalt disilicide on the silicon surface due to the formation of several nuclei of atomic thickness on the surface of the silicon substrate are presented. To create these structures, the ion implantation method was used. The dependence of the depth of penetration of ions into the substrate during ion implantation on temperature and ion dose was determined. In the case of implantation of Co+ ions into Si at room temperature silicon uniformly combines with Co atoms at a depth of 3.5–4 nm, the Co concentration in these layers is 45–50 at. %. Co has been shown to form chemical bonds with Si atoms in the sample containing 40–45 atomic % of Co. When implanting Co+ into Si at 600 K, it was found that the depth of the same added layer is 2.5–3 nm, and CCo forming bonds with Si atoms increases to 85–90%. [ABSTRACT FROM AUTHOR]

Long-distance transport of a nanoparticle on a solid surface remains a challenge in nanotechnology. Here, we design a nanoscale motor device for continuously transporting a nanoparticle on a beam surface. The device is composed of repeated units of clamped beams on which a harmonic excitation is applied to induce a gradient in atomic density on their surface, and such atomic density consequently creates a driving force on the nanoparticle attached to the device surface. The design requirements that should be satisfied by the device attributes are analytically derived, and the effect of the device attributes on the device transport performance is discussed. In addition, molecular dynamics simulations for a typical device of a graphene sheet transported on a silver beam are conducted to verify the analytical results. The proposed design provides a starting point for continuously transporting a nanoobject on a solid surface and has great potential in various applications such as nanomotors and molecular assembly lines. [ABSTRACT FROM AUTHOR]

In this paper, the (2 + 1)-dimensional variable coefficients equation which describes the thermophoric wave motion of wrinkles in graphene sheets (2D-vGS) is studied, where it has many applications in 2D optics, nanophotonic, and nanoelectronics. A direct simplified Hirota's bilinear method is generalized to find the bilinear form of the 2D-vGS equation. Accordingly, one, two, and three soliton wave solutions indicate that our studied equation is fully integrable and has n-soliton solutions. Moreover, we have focused on the study of two and three solitons interactions, this leads to the identification of two distinct solution types, the Y-shape soliton and fork- shape soliton, which can be clearly distinguished from the 3D plots and density plots. These solutions are characterized by a rich spectrum of collision dynamics and encompassing phenomena such as fusion and fission. The nonlinear properties of the two and three soliton solutions could be useful for farther applications in 2D optics like metamaterials with exotic optical properties and ultra-compact and efficient photonic devices. [ABSTRACT FROM AUTHOR]

The hybrid nanomaterials doped organic polymer can be considered as a promising nanosystems to apply in various optical and electronics fields. In present work, the nanocomposites films based on polyethylene oxide(PEO) filled by silicon nitride(Si3N4) and cerium oxide(CeO2) nanostrucures were synthesized to employ in numerous advanced electronics and optical approaches. The PEO/Si3N4/CeO2 nanocomposites have unusual characteristics compared of other nanocomposites included exceptional optical characteristics, inexpensive, superior chemical and physical properties. The optical and structural characteristics of PEO/Si3N4/CeO2 nanocomposites are investigated. Results indicated the absorbance of PEO was rise of 53% in the wavelength(λ)=320 nm (UV-spectrum) while its increased of 23% in the λ=520 nm (VIS-spectrum) and 22.3% in the λ=720 nm (NIR-spectrum) when the Si3N4/CeO2 NPs content reached of 7.6 wt.%. The transmittance decreased of 64% at λ=320 nm and its reduced of 19.9% at λ=720 nm, these results make the PEO/Si3N4/CeO2 nanocomposites are important and promising nanomaterials for optical and electronics fields. The energy gap was decreased from 4.2 eV to 2.3 eV with increasing Si3N4/CeO2 NPs content to 7.6 wt.%. The other optical factors of PEO enhanced among boosting Si3N4/CeO2 NPs content. Finally, the attained results demonstrated the PEO/Si3N4/CeO2 nanocomposites are promising nanostructures and important key for development of optical and nanoelectronics applications. [ABSTRACT FROM AUTHOR]

In the context of advanced nanoelectronics, two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are gaining considerable interest due to their ultimate thinness, clean surface and high carrier mobility. The engineering prospects offered by those materials are further enlarged by the recent realization of atomically sharp TMD-based lateral junctions, whose electronic properties are governed by strain effects arising from the constituents lattice mismatch. Although most theoretical studies considered only misfit strain, first-principles simulations are employed here to investigate the transport properties under external deformation of a three-terminal device constructed from a MoS2/WSe2/MoS2 junction. Large modulation of the current is reported owing to the change in band offset, illustrating the importance of strain on the p–n junction characteristics. The device operation is demonstrated for both local and global deformations, even for ultra-short channels, suggesting potential applications for ultra-thin body straintronics. [ABSTRACT FROM AUTHOR]

Phosphorene is a unique semiconducting two-dimensional platform for enabling spintronic devices integrated with phosphorene nanoelectronics. Here, we have designed an all phosphorene lattice lateral spin valve device, conceived via patterned magnetic substituted atoms of 3d-block elements at both ends of a phosphorene nanoribbon acting as ferromagnetic electrodes in the spin valve. Through First-principles based calculations, we have extensively studied the spin-dependent transport characteristics of the new spin valve structures. Systematic exploration of the magnetoresistance (MR) of the spin valve for various substitutional atoms and bias voltage resulted in a phase diagram offering a colossal MR for V and Cr-substitutional atoms. Such MR can be directly attributed to their specific electronic structure, which can be further tuned by a gate voltage, for electric field controlled spin valves. The spin-dependent transport characteristics here reveal new features such as negative conductance oscillation and switching of the sign of MR due to change in the majority spin carrier type. Our study creates possibilities for the design of nanometric spin valves, which could enable integration of memory and logic elements for all phosphorene 2D processors. [ABSTRACT FROM AUTHOR]

We present an in-depth analysis of a single-electron box (SEB) biased through a floating node technique that is common in charge-coupled devices. The device is analyzed and characterized in the context of single-electron charge sensing techniques for integrated silicon quantum dots (QD). The unique aspect of our SEB design is the incorporation of a metallic floating node, strategically employed for sensing and precise injection of electrons into an electrostatically formed QD. To analyze the SEB, we propose an extended multi-orbital Anderson impurity model (MOAIM), adapted to our nanoscale SEB system, that is used to predict theoretically the behavior of the SEB in the context of a charge sensing application. The validation of the model and the sensing technique has been carried out on a QD fabricated in a fully depleted silicon on insulator process (FD-SOI) on a 22-nm CMOS technology node. We demonstrate the MOAIM's efficacy in predicting the observed electronic behavior and elucidating the complex electron dynamics and correlations in the SEB. The results of our study reinforce the versatility and precision of the model in the realm of nanoelectronics and highlight the practical utility of the metallic floating node as a mechanism for charge injection and detection in integrated QDs. Finally, we identify the limitations of our model in capturing higher order effects observed in our measurements and propose future outlooks to reconcile some of these discrepancies. [ABSTRACT FROM AUTHOR]

Extensive research is now being conducted on the design and construction of logic circuits utilizing quantum-dot cellular automata (QCA) technology. This area of study is of great interest due to the inherent advantages it offers, such as its compact size, high speed, low power dissipation, and enhanced switching frequency in the nanoscale domain. This work presents a design of a highly efficient RAM cell in QCA, utilizing a combination of a 3-input and 5-input Majority Voter (MV) gate, together with a 2 × 1 Multiplexer (MUX). The proposed design is also investigated for various faults such as single cell deletion, single cell addition and single cell displacement or misalignment defects. The circuit under consideration has a high degree of fault tolerance. The functionality of the suggested design is showcased and verified through the utilization of the QCADesigner tool. Based on the observed performance correlation, it is evident that the proposed design demonstrates effectiveness in terms of cell count, area, and latency. Furthermore, it achieves a notable improvement of up to 76.72% compared to the present configuration in terms of quantum cost. The analysis of energy dissipation, conducted using the QCAPro tool, is also shown for various scenarios. It is seen that this design exhibits the lowest energy dispersion, hence enabling the development of ultra-low power designs for diverse microprocessors and microcontrollers. [ABSTRACT FROM AUTHOR]

Power efficiency and enhancing the speed are two major challenges of traditional D-Flip-Flops (D-FF) for designing energy-efficient IOT (internet of thing) devices. Therefore, the main objective of this research article is to design low power high speed D-FF circuits using emerging nanoscale devices. Hence, the first time, in this paper, a pulse-triggered Junctionless D-Flip-Flop (JLFET D-FF) circuit is presented using 15 nm technology, targeting both power budget and high performance concerns. Here, the D-FF circuit uses a signal feedthrough approach to minimize transition duration when output switches from 0 to 1, which requires only a single JLFET structure. Further, to minimize the delay time for the 1 to 0 transition, the discharging path is optimized by employing only two JLFETs. The novel JLFET D-FF circuit is simulated in the Cadence virtuoso simulator using the Verilog-A model. The simulated results have shown that the average power consumption and delay of the proposed circuit are significantly improved as compared to the earlier reported work. The average power consumption in JLFET D-FF for 25% data switching activity is improved by approximately 56% and 64% than ULPFF and SFT-FF, respectively. Further, the power delay performance (PDP) of JLFET D-FF is improved by 96% and 97% at the same data switching activity as compared to ULPFF and SFT-FF, respectively. The performance of the novel D-FF circuit is measured by considering D to Q delay as key parameter which is improved by 77% and 77.5% than ULPFF and SFT-FF, respectively. The simulation results of this work can give insights into the in-circuit behavior of modern semiconductor devices. [ABSTRACT FROM AUTHOR]

The two-dimensional electron gas (2DEG) that forms on a semiconductor surface can be used to explore a variety of phenomena in quantum physics and plays an important role in nanoscale electronics, such as transistors. Controlling its formation is, thus, relevant. Using angle-resolved photoemission spectroscopy (ARPES) and accumulating the signal over many nanocrystals, we find that on clean InAs nanosheets with non-polar surfaces and wurtzite (WZ) crystal structures, a 2DEG can be observed at the Γ-point. We suggest that the step morphology on the WZ InAs specimens facilitates the appearance of the electron gas, since previous studies on InAs nanowire surfaces with the same crystal facet and a similar defect density did not exhibit a 2DEG. Subsequently, bismuth deposition leads to the disappearance of the 2DEG as well as a shift of the valence band. This is in contrast to previous observations on InAs surfaces, in which metal deposition would lead to the formation of a 2DEG. The control of the 2DEG with the addition of Bi atoms is relevant for applications of InAs nanosheets in quantum technologies. This study also illustrates that ARPES accumulated over several 2D materials oriented randomly around their normal axis can provide valuable information on their band structure with a fast turnover and low irradiation. [ABSTRACT FROM AUTHOR]

The present study objects to synthesize of PVP/SiC/Ti nanostructures as a future and promising nanomaterials for nanoelectronics, energy storage and optical approaches. The morphological and optical properties of PVP/SiC/Ti nanostructures were examined. Results of optical characteristics demonstrated the PVP/SiC/Ti nanostructures have stable absorbance(A) at UV and NIR spectra where the absorbance increased about 65.7% at λ = 400 nm and 65.3% at λ = 760 nm while transmission decreased when the concentration of PVP/SiC/Ti nanostructures increased of 37.5 gm/L, these results can be useful in solar energy fields, optical devices, anti-reflectance coating material, and other modern fields. When the concentration reached of 37.5 gm/L, energy band gap decreased from 3.25 to 2.25 eV, this behaviour makes the PVP/SiC/Ti nanostructures are suitable in numerous optoelectronics fields. The other optical factors of PVP/SiC/Ti nanostructures improved with rising concentration. The thermal energy storage results illustrated to obtain on gain of melting time reached 60%, this result makes the PVP–SiC–Ti–H2O nanofluids are multifunctional for renewable energy applications. Finally, the achieved results indicated to the PVP/SiC/Ti nanostructures are potential and promising to utilize in solar energy and optoelectronics approaches with excellent optical factors compared of other nanomaterials. [ABSTRACT FROM AUTHOR]

Multipoles are paramount for describing electromagnetic fields in many areas of nanoscale optics, playing an essential role in the design of devices in plasmonics and all‐dielectric nanophotonics. Challenging the traditional division into electric and magnetic moments, toroidal moments are proposed as a physically distinct family of multipoles with significant contributions to the properties of matter. However, the apparent impossibility of separately measuring their response sheds doubt on their true physical significance. Here, the possibility of selectively exciting toroidal moments is confirmed without any other multipole. A set of general conditions is developed that any current distribution must fulfill to be entirely described by toroidal moments and prove the results in an analytically solvable case. The new theory allows to design and verify experimentally an artificial structure supporting a pure broadband toroidal dipole response in the complete absence of the electric dipole and other "ordinary" multipole contributions. In addition, a structure capable of supporting a novel type of non‐radiating source is proposed‐ a "toroidal anapole," originating from the destructive interference of the toroidal dipole with the unconventional electromagnetic sources known as mean square radii. The results in this work provide conclusive evidence on the independent excitation of toroidal moments in electrodynamics. [ABSTRACT FROM AUTHOR]

In this Perspective, we discuss thermal imbalance and the associated electron-mediated thermal transport in quantum electronic devices at very low temperatures. We first present the theoretical approaches describing heat transport in nanoscale conductors at low temperatures, in which quantum confinement and interactions play an important role. We then discuss the experimental techniques for generating and measuring heat currents and temperature gradients on the nanoscale. Eventually, we review the most important quantum effects on heat transport and discuss implications for quantum technologies and future directions in the field. [ABSTRACT FROM AUTHOR]

The presented work shows the formation and profiling of nanocrystalline LiNbO3 films obtained by pulsed laser deposition, as well as the influence of the laser pulse repetition rate on the electrical properties, morphology, and growth processes of granular films. The study revealed that the nucleation process in LiNbO3 films can be intentionally altered by increasing the laser pulse repetition rate. When the repetition rate was set to 4 Hz, the resulting film comprised local islands and clusters with a diameter of 118.1 ± 5.9 nm. On the other hand, nanocrystalline films grown at a repetition rate of 10 Hz exhibited a continuous granular structure with a grain diameter of 235 ± 11.75 nm. These findings have the potential to contribute to the advancement of environmentally friendly energy devices utilizing lead-free piezoelectric energy harvesters. [ABSTRACT FROM AUTHOR]

Nanocomposites’ films of pure polyvinyl alcohol (PVA) and PVA doped with SiO2/BaTiO3 nanoparticles are fabricated using casting technique. The dielectric characteristics of PVA/SiO2/BaTiO3 nanocomposites are examined. The results show to enhance in dielectric properties, which include dielectric constant, dielectric loss and A.C. electrical conductivity of PVA with an increase in the SiO2/BaTiO3-nanoparticles’ content. The dielectric constant and dielectric loss of PVA/SiO2/BaTiO3 nanocomposites are reduced, while the A.C. electrical conductivity is increased, with raising the frequency. Finally, the obtained results illustrate that PVA/SiO2/BaTiO3 nanocomposites may be useful in various electrical fields. [ABSTRACT FROM AUTHOR]

A novel technique for creating logic gates and digital circuitry at the nanoscale is quantum cellular automata (QCA). The sensitivity of the circuit is enhanced and quantum circuits are more susceptible to unfavorable external conditions when component size are reduced. In this article, we offer a five-input majority gate with fault-tolerant feature in QCA technology, taking into account the significance of constructing circuits that can withstand flaws. We also assess all potential defects in the process of arranging cells in specific locations on the surface. These errors consist of extra cells, rotation, deletion, and displacement. The gate under study is subjected to the aforementioned four failure categories in the first stage. The QCADesigner simulator engine is then used to assess the accuracy of the circuit performance in the second step. 41 quantum cells have been used to make the gate of this five-input majority gate with fault-tolerant feature in QCA technology. Several techniques are explored to discover such a majority gate, such as adding cells (i.e., introducing redundancy into the circuit) and particular cell layout techniques. The goal is to come up with a design that can ideally withstand possible faults with the least amount of overhead on the circuit for fault-tolerant through a certain cell layout. The findings demonstrate the implemented majority gate's notable advantage over comparable scenarios. [ABSTRACT FROM AUTHOR]

This paper provides a comprehensive review of quantum spin sensing with a focus on the nitrogen vacancy (NV) center in diamond. Beginning with the discovery of optically detected magnetic resonance in NV centers, we trace the evolution of this technology and its integration with complementary metal-oxide-semiconductor technology, marking a significant advancement in measurement science. The unique optical and spin properties of NV centers, operational at room temperature and under ambient conditions, have broadened their application spectrum, notably in magnetometry for nanoscale magnetic field detection. This work describes the transition from isolated NV centers to dense ensembles, highlighting the challenges and advancements in microfabrication and nanofabrication that have facilitated the integration of these centers with photonic structures and electronic devices. The efficient readout of NV spin states and the challenges in miniaturization are addressed, showcasing the development of compact, portable quantum sensors. We also discuss the potential impact of these sensors in various domains, including vehicle sensor systems and biomedical applications, underscoring the significance of environmental influences on magnetometric readings. [ABSTRACT FROM AUTHOR]

Achieving a low resistance contact is essential for developing two-dimensional (2D) material-based field-effect transistors (FETs). While n-type contacts to 2D semiconductors have been studied, understanding and designs for p-type contacts to 2D semiconductors remain very limited. In this study, we propose and computationally explore three strategies to improve the contact resistance in p-type 2D FETs, which remains a critical bottleneck of 2D logic technology, through the engineering of van der Waals (vdW) material heterostructures: (i) intercalating a graphene layer between a high-work-function metal and 2D semiconductor, which can result in low contact resistance of ~ 60 Ω μm for the graphene-intercalated contact between a high-work-function metal and WSe2 semiconductor; (ii) engineering the atomic stacking order between a vdW metal and 2D semiconductor, which can result in contact resistance of ~ 50 Ω μm; (iii) sandwiching the 2D layered semiconductor between vdW metals from both sides, which can further reduce the contact resistance to ~ 47 Ω μm and ~ 36 Ω μm for cases (i) and (ii), respectively. Experimental fabrication and characterization illustrate the feasibility of structural engineering of contacts. The above structural designs can lead to significantly reduced metal-induced gap states (MIGS) and low barrier height for holes, resulting in low contact resistance. They are also naturally compatible with the gate-all-around (GAA) transistor structure. In addition to contact materials selection, vdW structural design offers an alternative approach for achieving low contact resistance to p-type 2D FETs. [ABSTRACT FROM AUTHOR]