1. Electrical resistivity at the micron scale in a polycrystalline SiC ceramic.
- Author
-
Kim, Yanghee, Lee, Ji Yeong, Cho, Min Kyung, Ahn, Jae-Pyoung, and Kim, Young-Wook
- Subjects
- *
ELECTRIC conductivity , *CRYSTAL grain boundaries , *CERAMICS - Abstract
Grain boundaries typically dominate the electrical properties of polycrystalline ceramics. To understand the effect of grain boundaries on the electrical conductivity of SiC ceramics sintered with 2000 ppm Y 2 O 3 , the electrical resistivity of individual grains and multi-grains across boundaries at the micron scale was measured using a nano-probing system equipped with nano-manipulators. The results revealed that grain resistivity was bimodal because of the existence of a core/rim structure in grains, and the electrical resistivity of multigrain samples slowly increased with an increase in the number of grain boundaries crossed. Specifically, the electrical resistivity of a grain without a core, a grain with a core, a bicrystal with a single boundary, a sample crossing three boundaries, and a bulk polycrystalline sample were 2.36 × 10-1, 5.05 × 10-1, 4.80 × 10-1, 5.04 × 10-1, and 5.84 × 10-1 Ω cm, respectively. The results suggest that the electrical resistivity of polycrystalline SiC ceramics is primarily influenced by the presence of a grain boundary or core and secondarily by the number of boundaries. [ABSTRACT FROM AUTHOR]
- Published
- 2021
- Full Text
- View/download PDF