168 results on '"Nafus, Kathleen"'
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2. Advanced processes in metal-oxide resists for high-NA EUV lithography
3. Holistic litho-etch approach towards high NA EUV challenges
4. Litho process development for pillars to enable high density 4f2 memory cells at 34nm pitch
5. Pushing the boundaries of random logic metal patterning with low-n EUV single exposure
6. Advanced development methods for high-NA EUV lithography
7. Recent advances in EUV patterning in preparation towards high-NA EUV
8. EUV Metal Oxide Resist Development Technology for Improved Sensitivity, Roughness and Pattern Collapse Margin for High Volume Manufacturing
9. Holistic litho-etch development to address patterning challenges towards high NA EUV
10. A lithographic and etching study on EUV contact hole patterning for stochastic process mitigation towards advanced device scaling
11. Elucidating the role of imaging metrics for variability and after etch defectivity
12. Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges
13. Approaches to enable patterning of tight pitches towards high NA EUV
14. Pupil optimization for after etch defectivity: what imaging metrics matter?
15. Addressing EUV patterning challenges towards the limits of NA 0.33 EUV exposure
16. Recent advances in EUV patterning in preparation towards high-NA EUV
17. Novel processing technologies for advanced EUV patterning materials using metal oxide resist (MOR)
18. EUV resist performance enhancement by UV flood exposure for high NA EUV lithography
19. EUV defect reduction activities using coater/developer and etching technique
20. EUV resist chemical gradient enhancement by UV flood exposure for improvement in EUV resist resolution, process control, roughness, sensitivity and stochastic defectivity
21. CLEAN TRACK solutions for defectivity and CD control towards 5 nm and smaller nodes
22. Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges
23. Approaches to enable patterning of tight pitches towards high NA EUV
24. New coater/developer technologies for CD control and defectivity reduction towards 5 nm and smaller nodes
25. PSCAR optimization to reduce EUV resist roughness with sensitization using Resist Formulation Optimizer (RFO) (Conference Presentation)
26. Novel technologies in coater/developer to enhance the CD stability and to improve the defectivity toward N7 and smaller nodes
27. Calibrated PSCAR stochastic simulation
28. Resist coating and developing process technology toward EUV manufacturing sub 7nm node
29. Pupil optimization for after etch defectivity: what imaging metrics matter?
30. Advanced processes in metal-oxide resists for high-NA EUV lithography
31. Improvement of CD stability and defectivity in resist coating and developing process in EUV lithography process
32. EUV pupil optimization for 32nm pitch logic structures
33. EUV resist sensitization and roughness improvement by PSCAR with in-line flood exposure system (Conference Presentation)
34. Constructing a robust PSCARTM process for EUV (Conference Presentation)
35. Single Exposure EUV of 32nm pitch logic structures: Patterning performance on BF and DF masks
36. Tunable bandwidth for application-specific SAxP process enhancement
37. Resist coating and developing process technology toward EUV manufacturing sub-7nm node
38. Monte Carlo simulation of edge placement error
39. New coater/developer technologies for CD control and defectivity reduction towards 5 nm and smaller nodes.
40. PSCARTM optimization to reduce EUV resist roughness with sensitization using Resist Formulation Optimizer (RFO).
41. Calibrated PSCARTM stochastic simulation.
42. EUV defect reduction activities using coater/developer and etching technique
43. EUV resist performance enhancement by UV flood exposure for high NA EUV lithography
44. Novel processing technologies for advanced EUV patterning materials using metal oxide resist (MOR)
45. Defectivity and CD uniformity improvement in resist coating and developing process in EUV lithography process
46. Self-aligned block technology: a step toward further scaling
47. Image contrast enhancement of multiple patterning features through lower light source bandwidth
48. Pattern uniformity control in integrated structures
49. Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure
50. Technology for defectivity improvement in resist coating and developing process in EUV lithography process
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