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Your search keyword '"Nackashi, David P."' showing total 23 results
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23 results on '"Nackashi, David P."'

2. NanoCell electronic memories

Author

Tour, James M., Long Cheng, Nackashi, David P., Yuxing Yao, Flatt, Austen K., St. Angelo, Sarah K., Mallouk, Thomas E., and Franzon, Paul D.

Subjects
Gold -- Research, Gold -- Atomic properties, Nanotechnology -- Usage, Chemistry
Abstract

The first assembly of a NanoCell with disordered arrays of molecules and Au islands is described. The efficacy of a disordered nanoscale array for high-yielding switching and memory while mitigating the arduous task of nanoscale patterning is demonstrated.

Published
2003

5. Controllable molecular modulation of conductivity in silicon-based devices

Author

Tao He, Corley, David A., Meng Lu, Di Spigna, Neil Halen, Jianli He, Nackashi, David P., Franzon, Paul D., and Tour, James M.

Subjects
Electrical conductivity -- Evaluation, Metal oxide semiconductor field effect transistors -- Electric properties, Modulation (Electronics) -- Analysis, Semiconductor doping -- Analysis, Silicon -- Chemical properties, Silicon -- Electric properties, Chemistry
Abstract

A molecular monolayer, covalently grafted atop a silicon channel, has played a role similar to gating and impurity doping. The doping- and gating-like effects together has shown the controllable modulation of conductivity in pseudometal-oxide-semiconductor field-effect transistors (pseudo-MOSFETs) and the results have offered a paradigm for controlling electronic characteristics in nanodevices.

Published
2009

6. Controlled modulation of conductance in silicon devices by molecular monolayers

Author

Tao He, Tour, James M., Jianli He, Franzon, Paul D., Meng Lu, Nackashi, David P., Bo Chen, Nolte, Whitney M., Harry Pang, and Reus, William F.

Subjects
Silicon compounds -- Electric properties, Silicon compounds -- Structure, Metallic oxides -- Electric properties, Metallic oxides -- Structure, Monomolecular films -- Electric properties, Monomolecular films -- Structure, Chemistry
Abstract

The drain current and threshold voltage in pseudo metal-oxide-semiconductor field-effect transistors (MOSFETs) is modulated by grafting a monolayer of molecules atop oxide-free H-passivated silicon surfaces. An electronically controlled series of molecules, from strong [pi]-electron donors to strong [pi]-electron acceptors, is covalently attached onto the channel region of the transistors.

Published
2006

8. A new MEMS-based system for ultra-high-resolution imaging at elevated temperatures

Author

Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 ; Materials Science and Technology Division, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831-6064, USA, Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712, Protochips Inc., 840 Main Campus Drive, Suite 3500, Raleigh, North Carolina 27606, Allard, Lawrence F., Bigelow, Wilbur C., Jose-Yacaman, Miguel, Nackashi, David P., Damiano, John, Mick, Stephen E., Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 ; Materials Science and Technology Division, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831-6064, USA, Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712, Protochips Inc., 840 Main Campus Drive, Suite 3500, Raleigh, North Carolina 27606, Allard, Lawrence F., Bigelow, Wilbur C., Jose-Yacaman, Miguel, Nackashi, David P., Damiano, John, and Mick, Stephen E.

Abstract

In recent years, an increasing number of laboratories have been applying in situ heating (and ultimately, gas reaction) techniques in electron microscopy studies of catalysts and other nanophase materials. With the advent of aberration-corrected electron microscopes that provide sub-??ngstr??m image resolution, it is of great interest to study the behavior of materials at elevated temperatures while maintaining the resolution capabilities of the microscope. In collaboration with Protochips Inc., our laboratory is developing an advanced capability for in situ heating experiments that overcomes a number of performance problems with standard heating stage technologies. The new heater device allows, for example, temperature cycling from room temperature to greater than 1000??C in 1 ms (a heating rate of 1 million Centigrade degrees per second) and cooling at nearly the same rate. It also exhibits a return to stable operation (drift controlled by the microscope stage, not the heater) in a few seconds after large temperature excursions. With Protochips technology, we were able to demonstrate single atom imaging and the behavior of nanocrystals at high temperatures, using high-angle annular dark-field imaging in an aberration-corrected (S)TEM. The new capability has direct applicability for remote operation and (ultimately) for gas reaction experiments using a specially designed environmental cell. Microsc. Res. Tech., 2009. ?? 2009 Wiley-Liss, Inc.

Published
2009

18. Clustering Effects on Discontinuous Gold Film NanoCells

Author

Seminario, Jorge M., primary, Ma, Yuefei, additional, Agapito, Luis A., additional, Yan, Liuming, additional, Araujo, Roy A., additional, Bingi, Sridhar, additional, Vadlamani, Nagendra. S., additional, Chagarlamudi, Krishna, additional, Sudarshan, Tangali S., additional, Myrick, Michael L., additional, Colavita, Paula E., additional, Franzon, Paul D., additional, Nackashi, David P., additional, Cheng, Long, additional, Yao, Yuxing, additional, and Tour, James M., additional

Published
2004
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23. Novel MEMS-Based Gas-Cell/Heating Specimen Holder Provides Advanced Imaging Capabilities for In Situ Reaction Studies.

Author

Allard, Lawrence F., Overbury, Steven H., Bigelow, Wilbur C., Katz, Michael B., Nackashi, David P., and Damiano, John

Subjects
TRANSMISSION electron microscopes, SCANNING electron microscopes, SILICON nitride, MICROFABRICATION
Abstract

In prior research, specimen holders that employ a novel MEMS-based heating technology (AduroTM) provided by Protochips Inc. (Raleigh, NC, USA) have been shown to permit sub-Ångström imaging at elevated temperatures up to 1,000°C during in situ heating experiments in modern aberration-corrected electron microscopes. The Aduro heating devices permit precise control of temperature and have the unique feature of providing both heating and cooling rates of 106°C/s. In the present work, we describe the recent development of a new specimen holder that incorporates the Aduro heating device into a “closed-cell” configuration, designed to function within the narrow (2 mm) objective lens pole piece gap of an aberration-corrected JEOL 2200FS STEM/TEM, and capable of exposing specimens to gases at pressures up to 1 atm. We show the early results of tests of this specimen holder demonstrating imaging at elevated temperatures and at pressures up to a full atmosphere, while retaining the atomic resolution performance of the microscope in high-angle annular dark-field and bright-field imaging modes. [ABSTRACT FROM AUTHOR]

Published
2012
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