1. Thermal quenching of the yellow luminescence in GaN
- Author
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Morteza Monavarian, N. M. Albarakati, V. Avrutin, Hadis Morkoç, and Michael A. Reshchikov
- Subjects
010302 applied physics ,Materials science ,Photoluminescence ,Quenching (fluorescence) ,Doping ,Wide-bandgap semiconductor ,Analytical chemistry ,General Physics and Astronomy ,02 engineering and technology ,Activation energy ,021001 nanoscience & nanotechnology ,01 natural sciences ,Arrhenius plot ,Condensed Matter::Materials Science ,Excited state ,0103 physical sciences ,0210 nano-technology ,Luminescence - Abstract
We observed varying thermal quenching behavior of the yellow luminescence band near 2.2 eV in different GaN samples. In spite of the different behavior, the yellow band in all the samples is caused by the same defect—the YL1 center. In conductive n-type GaN, the YL1 band quenches with exponential law, and the Arrhenius plot reveals an ionization energy of ∼0.9 eV for the YL1 center. In semi-insulating GaN, an abrupt and tunable quenching of the YL1 band is observed, where the apparent activation energy in the Arrhenius plot is not related to the ionization energy of the defect. In this case, the ionization energy can be found by analyzing the shift of the characteristic temperature of PL quenching with excitation intensity. We conclude that only one defect, namely, the YL1 center, is responsible for the yellow band in undoped and doped GaN samples grown by different techniques.
- Published
- 2018