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Thermal quenching of the yellow luminescence in GaN
- Source :
- Journal of Applied Physics. 123:161520
- Publication Year :
- 2018
- Publisher :
- AIP Publishing, 2018.
-
Abstract
- We observed varying thermal quenching behavior of the yellow luminescence band near 2.2 eV in different GaN samples. In spite of the different behavior, the yellow band in all the samples is caused by the same defect—the YL1 center. In conductive n-type GaN, the YL1 band quenches with exponential law, and the Arrhenius plot reveals an ionization energy of ∼0.9 eV for the YL1 center. In semi-insulating GaN, an abrupt and tunable quenching of the YL1 band is observed, where the apparent activation energy in the Arrhenius plot is not related to the ionization energy of the defect. In this case, the ionization energy can be found by analyzing the shift of the characteristic temperature of PL quenching with excitation intensity. We conclude that only one defect, namely, the YL1 center, is responsible for the yellow band in undoped and doped GaN samples grown by different techniques.
- Subjects :
- 010302 applied physics
Materials science
Photoluminescence
Quenching (fluorescence)
Doping
Wide-bandgap semiconductor
Analytical chemistry
General Physics and Astronomy
02 engineering and technology
Activation energy
021001 nanoscience & nanotechnology
01 natural sciences
Arrhenius plot
Condensed Matter::Materials Science
Excited state
0103 physical sciences
0210 nano-technology
Luminescence
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 123
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........16b355aa3d295c40f9e40b28f5479306