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Single-electron sources, formed by a quantum dot (QD), are key elements for realizing electron analogue of quantum optics. We develop a new type of single-electron source with functionalities that are absent in existing sources. This source couples with only one lead. By an AC rf drive, it successively emits holes and electrons cotraveling in the lead, as in the mesoscopic capacitor. Thanks to the considerable charging energy of the QD, however, emitted electrons have energy levels a few tens of millielectronvolts above the Fermi level, so that emitted holes and electrons are split by a potential barrier on demand, resulting in a rectified quantized current. The resulting pump map exhibits quantized triangular islands, in good agreement with our theory. We also demonstrate that the source can be operated with another tunable-barrier single-electron source in a series double QD geometry, showing parallel electron pumping by a common gate driving.

Mo0.67W0.33Se2 devices show gate-voltage-induced electrical phase transitions.

We developed an electron-counting technique for a self-referenced single-electron quantized current source of a single-electron-pump system and investigated the fidelity of our whole measurement process, including single-electron pumping and electron counting by a single-electron transistor (SET) with a charge-lock feedback loop. The device was fabricated monolithically using a two-dimensional electron system of a GaAs/AlGaAs hetero-junction. In addition to the probability of single-electron transfer, we also measured the current noise spectrum of the SET, from which its charge noise power [Formula: see text] was derived. The results show that the estimated charge noise of 2.2 [Formula: see text] for a semiconductor-based SET is comparable to that of metallic SETs.

We compare the adiabatic quantized charge pumping performed in two types of InAs nanowire double quantum dots (DQDs), either with tunnel barriers defined by closely spaced narrow bottom gates, or by well-separated side gates. In the device with an array of bottom gates of 100 nm pitch and 10 mu m lengths, the pump current is quantized only up to frequencies of a few MHz due to the strong capacitive coupling between the bottom gates. In contrast, in devices with well-separated side gates with reduced mutual gate capacitances, we find well-defined pump currents up to 30 MHz. Our experiments demonstrate that high frequency quantized charge pumping requires careful optimization of the device geometry, including the typically neglected gate feed lines.

From both a fundamental viewpoint and the perspective of wave-function engineering of an electron pumped by single-electron sources, it is important to understand how an electron gains energy while propagating along a time-dependent region in a quantum Hall channel. In our previous work, we experimentally observed that, when the electron travels through the time-dependent region before entering the pump, the pump current becomes substantially larger than the quantized value. We here present the results of a theoretical and experimental investigation of the mechanism underlying the heating of electrons traveling through a region of time-dependent potential induced by an rf signal. Using the Floquet scattering theory, we describe the energy distribution of the heated electrons, whose effective temperature can be substantially larger than the cryostat temperature. The behavior of the measured currents when the barrier height and the radio-frequency power are varied is in good qualitative agreement with the theoretical predictions., This research was supported by Research on “Redefinition of SI Base Units” (KRISS-2021-GP2021-0001), funded by the Korea Research Institute of Standards and Science. S.R. acknowledges partial support from the María de Maeztu Program for units of Excellence in R&D (MDM-2017-0711). M.B. was partially supported by the National Research Foundation of Korea (Grant No. NRF-2021R1A2C3012612). H.S. and M.B. were supported by the National Research Foundation of Korea (Grant No. SRC2016R1A5A1008184). The author at KIST acknowledges support from an IITP grant funded by the Korean government (MSIT) (Grant No. 20190004340011001).

Parallelization of pump devices is a direct way to increase the output level of the single-electron pump, which is required for metrological purposes. We fabricated a pair of single-electron pumps in parallel on a chip level and investigated their synchronized electron pumping phenomena. In the investigation, the pumping error was estimated to see whether the error was increased after the parallelization. We found that a proper choice of rf gates must be made in accordance with the direction of the applied magnetic field. In relation with the chirality of the edge state, the rf modulating gates should be chosen not to produce rf-induced heating effects.

Various intriguing quantum transport measurements for carbon nanotubes (CNTs) based on their unique electronic band structures have been performed adopting a field-effect transistor (FET), where the contact resistance represents the interaction between the one-dimensional and three-dimensional systems. Recently, van der Waals (vdW) gap tunneling spectroscopy for single-walled CNTs with indium–metal contacts was performed adopting an FET device, providing the direct assignment of the subband location in terms of the current–voltage characteristic. Here, we extend the vdW gap tunneling spectroscopy to multi-walled CNTs, which provides transport spectroscopy in a tunneling regime of ~1 eV, directly reflecting the electronic density of states. This new quantum transport regime may allow the development of novel quantum devices by selective electron (or hole) injection to specific subbands.

We demonstrate a gate-tunable quantum dot (QD) located between two potential barriers defined in a few-layer MoS

The achievement of ultraclean Ohmic van der Waals (vdW) contacts at metal/transition-metal dichalcogenide (TMDC) interfaces would represent a critical step for the development of high-performance electronic and optoelectronic devices based on two-dimensional (2D) semiconductors. Herein, we report the fabrication of ultraclean vdW contacts between indium (In) and molybdenum disulfide (MoS2) and the clarification of the atomistic origins of its Ohmic-like transport properties. Atomically clean In/MoS2 vdW contacts are achieved by evaporating In with a relatively low thermal energy and subsequently cooling the substrate holder down to ~100 K by liquid nitrogen. We reveal that the high-quality In/MoS2 vdW contacts are characterized by a small interfacial charge transfer and the Ohmic-like transport based on the field-emission mechanism over a wide temperature range from 2.4 to 300 K. Accordingly, the contact resistance reaches ~600 Ω μm and ~1000 Ω μm at cryogenic temperatures for the few-layer and monolayer MoS2 cases, respectively. Density functional calculations show that the formation of large in-gap states due to the hybridization between In and MoS2 conduction band edge states is the microscopic origins of the Ohmic charge injection. We suggest that seeking a mechanism to generate strong density of in-gap states while maintaining the pristine contact geometry with marginal interfacial charge transfer could be a general strategy to simultaneously avoid Fermi-level pinning and minimize contact resistance for 2D vdW materials.

The performance of our newly constructed cold-finger cryostat is investigated for quantum Hall resistance (QHR) and single-electron pump (SEP) devices. The cryostat features a vacuum-sealed sample chamber (SC) attached to a 0.3 K plate inside the inner vacuum can. The SC is designed to accommodate both the SEP and the QHR devices with a shielding partition between them. The measured QHR in the chamber approaches the nominal value for filling factor 2 within 20 parts in 109. The white-noise level of the SEP module, as obtained from the Allan deviation data, is 4.5 fA/ $\sqrt {\mathrm{ Hz}}$ . We also investigated the thermometry of the SC either under vacuum or filled with 3He gas. We calculated the thermal conductivity of the different heat conduction channels in the sample holder and found the dominant channel to be through the chip carriers not signal lines.

The performance of our newly constructed cold-finger cryostat is investigated for the precision measurement of quantum Hall resistance (QHR) and single-electron pump (SEP) current. The cryostat is featured by a vacuum sealed sample chamber that is attached to the 0.3 K-plate inside the inner vacuum can. The nominal base temperature of the sample chamber was 0.4 K. However, the electron temperature estimated with a single-electron transistor was approximately 0.6 K. Precision evaluation of a GaAs QHR device shows that the quantized Hall resistance is equivalent to the nominal value of $h/2e^{2}$ within one part in 108. The Allan deviation data for the SEP current is analyzed to be greater than those obtained from SEP in a wet 3He cryostat at Korean Research Institute of Standards and Science.

We developed a current-reversal operation method for single-parameter electron pumps, based on cryo-gate switches located between the ohmic contacts and quantum dot. The current reversal mode provided an enhanced signal-to-noise ratio, resulting in a reduction of the measurement time to reach the same relative measurement uncertainty, compared to a conventional unipolar current measurement method.

A single-electron pump based on a quantum dot is a promising candidate to realize the quantum current standard based on the new SI definition. In order to develop the quantum current standard, we fabricated two different types of single electron pumps based on GaAs/AlGaAs heterostructures by using KRISS nanofabrication facility. From the measurement results, we successfully observed the quantized current steps from the two differently designed pump devices.

An inability to precisely control doping has hindered the development of electrically reliable and predictable low-dimensional devices. Here, we demonstrated a modulation of electronic bands of one-dimensional carbon nanotubes (CNTs) over a wide range by using metal electrodes having almost the same work function as the CNT in a dual-gate mode. Gate-response curves obtained from Ti versus In metal-contacted devices showed opposite behaviors in shape and magnitude in an ambipolar state, which was shown to be due to the difference between the pinned positions of their Fermi levels in the band gap of the CNT with different work functions of the metals. By varying the gate-bias voltages of the dual gates, we successfully demonstrated that the electronic band profile of the CNT can be modulated precisely and over a wide range to higher and lower energy levels, resulting in the ability to have it form p-metal, p-type semiconductor, ambipolar, n-type semiconductor, and n-metallic electronic states.

We investigated the homogeneity and tolerance to heat of monolayer MoS2 using photoluminescence (PL) spectroscopy. For MoS2 on SiO2, the PL spectra of the basal plane differ from those of the edge, but MoS2 on hexagonal boron nitride (h-BN) was electron-depleted with a homogeneous PL spectra over the entire area. Annealing at 450 °C rendered MoS2 on SiO2 homogeneously electron-depleted over the entire area by creating numerous defects; moreover, annealing at 550 °C and subsequent laser irradiation on the MoS2 monolayer caused a loss of its inherent crystal structure. On the other hand, monolayer MoS2 on h-BN was preserved up to 550 °C with its PL spectra not much changed compared with MoS2 on SiO2. We performed an experiment to qualitatively compare the binding energies between various layers, and discuss the tolerance of monolayer MoS2 to heat on the basis of interlayer/interfacial binding energy.

As a consequence of their unique electronic band structures, low-dimensional materials such as one-dimensional (1D) single-wall carbon nanotubes (SWCNTs), 2D graphene and various 2D transition-metal dichalcogenides have exhibited intriguing electrical transport properties when incorporated into field-effect transistors. Meanwhile, the van-der-Waals (vdW) interfaces between top-contacted metals and low-dimensional materials have become a challenging issue for future high-performance electronics. Here, we report a new aspect of vdW interface that offers vdW-gap tunneling spectroscopy by adopting indium (In) as a top-contacted metal on SWCNTs without an artificial insulating tunnel barrier. We show that multiple differential conductance peaks for varying bias voltages correspond to the van Hove singularities existing in the electronic density of states of SWCNTs. Our first-principles calculations reveal that In forms a physisorption interface with a considerable vdW gap, which causes little disruption to the density of states of the SWCNTs near the metal interface and which thus allows vdW-gap tunneling spectroscopy.

We study the magnetoconductance and dephasing in a strongly localized regime in black phosphorus (BP) devices. The phase coherence length, lφ obtained from the magnetoconductance follows a temperature dependence of T–1/3 in the strongly localized regime with kFle < 1 (ξ < lφ) based on the Ioffe–Regel criterion. Here kF, le and ξ are the Fermi wave vector, mean free path and localization length, respectively. The conductance behavior as a function of temperature confirms that the transport regime of our BP is in a variable-range-hopping regime, which results in the strongly localized regime.

Step junctions are often present in layered materials, i.e. where single-layer regions meet multi-layer regions, yet their effect on thermal transport is not understood to date. Here, we measure heat flow across graphene junctions (GJs) from monolayer to bilayer graphene, as well as bilayer to four-layer graphene for the first time, in both heat flow directions. The thermal conductance of the monolayer-bilayer GJ device ranges from ~0.5 to 9.1x10^8 Wm-2K-1 between 50 K to 300 K. Atomistic simulations of such GJ device reveal that graphene layers are relatively decoupled, and the low thermal conductance of the device is determined by the resistance between the two dis-tinct graphene layers. In these conditions the junction plays a negligible effect. To prove that the decoupling between layers controls thermal transport in the junction, the heat flow in both directions was measured, showing no evidence of thermal asymmetry or rectification (within experimental error bars). For large-area graphene applications, this signifies that small bilayer (or multilayer) islands have little or no contribution to overall thermal transport.

We review recent precision measurements on semiconductor tunable-barrier electron pumps operating in a ratchet mode. Seven studies on five different designs of pumps have reported measurements of the pump current with relative total uncertainties around $10^{-6}$ or less. Combined with theoretical models of electron capture by the pumps, these experimental data exhibits encouraging evidence that the pumps operate according to a universal mechanism, independent of the details of device design. Evidence for robustness of the pump current against changes in the control parameters is at a more preliminary stage, but also encouraging, with two studies reporting robustness of the pump current against three or more parameters in the range of $\sim\!5 \times 10^{-7}$ to $\sim\!2 \times 10^{-6}$. This review highlights the need for an agreed protocol for tuning the electron pump for optimal operation, as well as more rigorous evaluations of the robustness in a wide range of pump designs., Comment: 18 pages, 8 figures

Coupling of the electron orbital motion and spin, i.e., spin-orbit coupling (SOC) leads to nontrivial changes in energy-level structures, giving rise to various spectroscopies and applications. The SOC in solids generates energy-band inversion or splitting under zero or weak magnetic fields, which is required for topological phases or Majorana fermions. Here, we examined the interplay between the Zeeman splitting and SOC by performing the transport spectroscopy of Landau levels (LLs) in indium arsenide nanowires under a strong magnetic field. We observed the anomalous Zeeman splitting of LLs, which depends on the quantum number of LLs as well as the electron spin. We considered that this observation was attributed to the interplay between the Zeeman splitting and the SOC. Our findings suggest an approach of generating spin-resolved chiral electron transport in nanowires.

We demonstrate a gate-tunable quantum dot (QD) located between two potential barriers defined in a few-layer MoS2. Although both local gates used to tune the potential barriers have disorder-induced QDs, we observe diagonal current stripes in current resonant islands formed by the alignment of the Fermi levels of the electrodes and the energy levels of the disorder-induced QDs, as evidence of the gate-tunable QD. We demonstrate that the charging energy of the designed QD can be tuned in the range of 2–6 meV by changing the local-gate voltages in ∼1 V.

A single electron pump was incorporated with a quantum Hall resistance and a Josephson voltage for the current evaluation in the framework of Ohm’s law. The pump current of about 60 pA level was amplified by a stable amplifier with a gain of 103 to induce a Hall voltage of about 60 mV level across a 1 MΩ Hall resistance array, which was compared with the Josephson voltage. The gain of the current amplifier was calibrated with a cryogenic current comparator bridge. For two different drive frequencies and repeated thermal cycles, the comparisons demonstrated that the pump current averaged over the first plateau was equal to ef within the combined uncertainty level of 0.3 × 10−6 (k = 1).

Heat transfer across interfaces of graphene and polar dielectrics (e.g., SiO2) could be mediated by direct phonon coupling, as well as electronic coupling with remote interfacial phonons (RIPs). To understand the relative contribution of each component, we develop a new pump–probe technique called voltage-modulated thermoreflectance (VMTR) to accurately measure the change of interfacial thermal conductance under an electrostatic field. We employed VMTR on top gates of graphene field-effect transistors and find that the thermal conductance of SiO2/graphene/SiO2 interfaces increases by up to ΔG ≈ 0.8 MW m–2 K–1 under electrostatic fields of

The moderate band gap of black phosphorus (BP) in the range of 0.3-2 eV, along a high mobility of a few hundred cm(2) V(-1) s(-1) provides a bridge between the gapless graphene and relatively low-mobility transition metal dichalcogenides. Here, we study the mechanism of electrical and thermoelectric transport in 10-30 nm thick BP devices by measurements of electrical conductance and thermopower (S) with various temperatures (T) and gate-electric fields. The T dependences of S and the sheet conductance (σ□) of the BP devices show behaviors of T(1/3) and exp[-(1/T)(1/3)], respectively, where S reaches ∼0.4 mV/K near room T. This result indicates that two-dimensional (2D) Mott's variable range hopping (VRH) is a dominant mechanism in the thermoelectric and electrical transport in our examined thin BP devices. We consider the origin of the 2D Mott's VRH transport in our BPs as trapped charges at the surface of the underlying SiO2 based on the analysis with observed multiple quantum dots.

In general, the gears of mixer reducer for concrete mixer truck make use of the differential type planetary gear system to rotate mixer drum smoothly on the initial conditions. The planetary gear system is very important part of mixer reducer for concrete mixer truck because of strength problem. In the present study, calculating the gear specifications and analyzing the gear bending & compressive stresses of the differential planetary gear system for mixer reducer are necessary to analyze gear bending and compressive stresses confidently, for optimal design of the planetary gear system in respect to cost and reliability. As a result, analyzing actual gear bending and compressive stresses of the planetary gear system using Lewes & Hertz equation and verifying the calculated specifications of the planetary gear system, evaluate the results with the data of allowable bending and compressive stress from the Stress-No. of cycles curves of gears.