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Abstract The mid-infrared spectral region opens up new possibilities for applications such as molecular spectroscopy with high spatial and frequency resolution. For example, the mid-infrared light provided by synchrotron sources has helped for early diagnosis of several pathologies. However, alternative light sources at the table-top scale would enable better access to these state-of-the-art characterizations, eventually speeding up research in biology and medicine. Mid-infrared supercontinuum generation in highly nonlinear waveguides pumped by compact fiber lasers represents an appealing alternative to synchrotrons. Here, we introduce orientation-patterned gallium arsenide waveguides as a new versatile platform for mid-infrared supercontinuum generation. Waveguides and fiber-based pump lasers are optimized in tandem to allow for the group velocities of the signal and the idler waves to match near the degeneracy point. This configuration exacerbates supercontinuum generation from 4 to 9 µm when waveguides are pumped at 2750 nm with few-nanojoule energy pulses. The brightness of the novel mid-infrared source exceeds that of the third-generation synchrotron source by a factor of 20. We also show that the nonlinear dynamics is strongly influenced by the choice of waveguide and laser parameters, thus offering an additional degree of freedom in tailoring the spectral profile of the generated light. Such an approach then opens new paths for high-brightness mid-infrared laser sources development for high-resolution spectroscopy and imaging. Furthermore, thanks to the excellent mechanical and thermal properties of the waveguide material, further power scaling seems feasible, allowing for the generation of watt-level ultra-broad frequency combs in the mid-infrared.

Orientation-patterned gallium phosphide (OP-GaP) has been grown heteroepitaxially on OP gallium arsenide (GaAs) templates using hydride vapor phase epitaxy (HVPE). The effect of OP-GaAs template fabrication methods of epitaxial-inversion and wafer bonding on the heteroepitaxial OP-GaP growth has been investigated. OP-GaP layers with a growth rate of up to 35 µm/h and excellent domain fidelity were obtained. The growth rate and the domain fidelity have been revealed/studied by scanning electron microscope (SEM). In addition, we demonstrate that the crystalline quality of the individual domains, namely, the substrate-oriented domains (ODs) and the inverted domains (IDs), can be investigated by high-resolution x-ray diffraction reciprocal space mapping (HRXRDRSM), which can also indicate the domain fidelity. Attempts to increase the growth rate and improve the domain fidelity by increasing the III and V group precursors resulted in either an increase in the growth rate in the OP-GaP layers grown on epitaxial inversion OP-GaAs template at the expense of the domain crystalline quality and fidelity or an improvement in the crystalline quality of the domains at the expense of the growth rate in the OP-GaP layers grown on wafer-bonded OP-GaAs templates. In the case of OP-GaP grown on OP-GaAs templates prepared by epitaxial inversion, the crystalline quality of the ODs is better than that of the IDs, but it shows that the quality of the inverted layer in the template influences the quality and fidelity of the grown domains. To the authors’ knowledge, exploitation of HRXRDRSM studies on OP-GaP to establish the crystalline quality of its individual domains (ODs and IDs) is the first of its kind. OP-ZnSe grown on OP-GaAs templates has also been included in this study to further emphasize the potential of this method. We propose from this study that once the growth rate is optimized from SEM studies, HRXRDRSM analysis alone can be used to assess the structural quality and to infer the domain fidelity of the OP structures.