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Direct Heteroepitaxy of Orientation‐Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi‐Phase‐Matching Applications
- Source :
- physica status solidi (a). 217:1900627
- Publication Year :
- 2019
- Publisher :
- Wiley, 2019.
-
Abstract
- Heteroepitaxial growth of orientation‐patterned (OP) GaP (OP‐GaP) on wafer‐bonded OP‐GaAs templates is investigated by low‐pressure hydride vapor phase epitaxy for exploiting the beneficial low two ...
- Subjects :
- Imagination
Quasi-phase-matching
Chemical substance
Materials science
media_common.quotation_subject
Vapor phase
02 engineering and technology
Epitaxy
01 natural sciences
0103 physical sciences
Materials Chemistry
Electrical and Electronic Engineering
media_common
010302 applied physics
business.industry
Hydride
Surfaces and Interfaces
021001 nanoscience & nanotechnology
Condensed Matter Physics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Template
Optoelectronics
0210 nano-technology
business
Science, technology and society
Subjects
Details
- ISSN :
- 18626319 and 18626300
- Volume :
- 217
- Database :
- OpenAIRE
- Journal :
- physica status solidi (a)
- Accession number :
- edsair.doi...........704622947a3e7f771d60a82ff508d7e3
- Full Text :
- https://doi.org/10.1002/pssa.201900627