200 results on '"Myburg, G."'
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2. Current–temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium
3. Electronic and annealing properties of the E 0.31 defect introduced during Ar plasma etching of germanium
4. Electrical Characterization of 1 keV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy
5. Dependence of damage efficiency of ions in diamond on electronic stopping
6. Corrosion behaviour of duplex stainless steels containing minor ruthenium additions in reducing acid media
7. Metal contacts to gallium arsenide
8. Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si
9. Electrical characterization of He-plasma processed n-GaAs
10. Defect annealing of alpha-particle irradiated n-GaAs
11. Electrical characterization of defects introduced in n-GaAs by alpha and beta irradiation from radionuclides
12. DLTS detection of hole traps in MBE grown ρ-GaAs using schottky barrier diodes
13. Electrical characterization of neutron irradiation induced defects in undoped epitaxially grown n-GaAs
14. Influence of the electron beam evaporation rate of Pt and the semiconductor carrier density on the characteristics of Pt/n-GaAs Schottky contacts
15. Electronic and annealing properties of a metastable He-ion implantation induced defect in GaAs
16. Electrical characterization of defects introduced in n-GaAs by carbon-ion irradiation
17. Electronic properties of defects introduced during sputter deposition of Cr Schottky contacts on GaAs
18. Deep levels introduced in n-GaN grown by the ELOG technique by high-energy electron irradiation
19. Processing-induced electron traps in n-type GaN
20. Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts
21. A deed level transient spectroscopy characterization of defects induced in epitaxially grown n-Si...
22. Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium
23. Proton irradiation of n-type GaAs
24. Electrical Characterization and Annealing Properties of Electrically Active Defects Introduced in n-Si During Sputter Etching in an Ar-plasma
25. Radiation induced defects in n-GaN, an overview
26. Electrical characterization of growth-induced defects inn-GaN
27. Electron irradiation induced defects in n-GaN.
28. Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma
29. Electrical characterization and annealing properties of electrically active defects introduced in n-Si during sputter etching in an Ar-plasma
30. Proton irradiation of n-type GaAs
31. Fermi level pinning by metal Schottky contacts on n type GaAs
32. Surface composition of Ru containing duplex stainless steel after passivation in non-oxidizing media
33. Atomic force microscopy study of Si(111) surface morphology and electrical characteristics of Pd/n-Si schottky diodes: effect of cleaning procedures
34. Summary of Schottky barrier height data on epitaxially grown n- and p-GaAs
35. Electronic and transformation properties of a metastable defect introduced in epitaxially grown boron-doped p-type Si by alpha particle irradiation
36. Electrical characterization of defects introduced in p-Si1−xGex during electron-beam deposition of Sc Schottky barrier diodes
37. Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs
38. Electrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion Bombardment
39. Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si1-xGex
40. Electronic properties of defects introduced in GaAs during sputter deposition of gold Schottky contacts
41. Electrical characterization of defects in SiCl4 plasma-etched n-GaAs and Pd Schottky diodes fabricated on it
42. Defect Formation by Low Energy Ions during Sputter Deposition of TiW and Au on Epitaxially Grown n-Si at Different Plasma Pressures
43. Comparative study of surface properties of austenitic stainless steels in sulfuric and hydrochloric acid solutions
44. Electronic Properties Of Defects Formed In n-Si During Sputter-Etching In An Ar Plasma
45. Optical And Electrical Characterisation Study Of SICL4 Reactive Ion Etched Gaas
46. Electrical Characterization Of Defects Introduced During Plasma-Based Processing Of GaAs
47. Electronic and annealing properties of a metastable He-ion implantation induced defect in GaAs
48. Electrical characterization of sputter-deposition-induced defects in epitaxially grown n-GaAs layers
49. The role of Ru in improving Schottky and ohmic contacts to InP
50. The Effect of Metallization Induced Defects on Metal-Semiconductor Contacts
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