Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si

Research was conducted to examine the electronic characteristics and isochronal annealing behavior of defects formed in epitaxially grown n-Si by 1 keV He, Ne- and Ar-ion bombardment using deep level transient spectroscopy. Two families of related defects were seen in the unannealed samples. Results indicate that most of the defects introduced by the low energy noble gas ions are different from the primary defects created by 5.4 MeV alpha-particle irradiation.