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There are close connections between the dose-induced threshold voltage shift of fully-depleted NMOS transistors and charge trapping in the buried oxide. Coupling between the front and back gate transistors is responsible for the significant shift in the fully-depleted SOI/NMOSFET which results from radiation-induced charge trapping in the buried oxide. Research indicates that the lateral parasitic transistor is more affected than the main active transistor by the buried oxide trapping.

We studied radiation and post-irradiation effects in a CMOS rad-hard technology. The physical properties of charge detrapping in the gate oxide, investigated by isothermal and isochronal annealings, are dependent on the experimental procedure (bias, time storage, temperature, dose level).