Total dose effects of a fully-depleted SOI NMOSFET and its lateral parasitic transistor

There are close connections between the dose-induced threshold voltage shift of fully-depleted NMOS transistors and charge trapping in the buried oxide. Coupling between the front and back gate transistors is responsible for the significant shift in the fully-depleted SOI/NMOSFET which results from radiation-induced charge trapping in the buried oxide. Research indicates that the lateral parasitic transistor is more affected than the main active transistor by the buried oxide trapping.