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The most important details of hotel service quality standards are the legal document approved for standardization by the state authority and the application and mandatory use of standard methods in the hotel. Standard is an example, benchmark, model, and standard-technical document reflecting the principles, requirements and rules of standard hotels. Quality in tourism is a powerful weapon for competition in international tourism market and tourists who are satisfied with the service in hotels, restaurants, service bureaus and tourist facilities of certain countries become their active promoters. The complex and complicated character of tourist service is pre-determined due to the fact that most service production is directly related to consumption, services are provided directly to tourists, tourists are offered a wide range of services and goods with different production and service technologies, service to tourists is carried out during the operation of various elements of logistics infrastructure, and servicesand goods offered to tourists are formed as a result of various types of activities. The hotel's reputation depends on the human factor and must be prepared for each hotel. Standards for reception, accommodation and services, restaurant, bar and other departments of the hotel should be developed. The staff must have clean uniforms and neat hairdos, be professional and experienced, and demonstrate good behavior and honesty. International service standards include providing quick and flexible service to guests, accurate execution of orders, and kindness and politeness. The most important details of hotel management standards include being attentive to guests, external appearance standards, confidentiality of information, having information about the work, being patient and considerate, responsibility, and having enough staff to provide efficient and consistent service. These standards are essential for a successful hotel business, as they ensure that the quality of management is maintained in an unstable competitive environment. Найважливішими реквізитами стандартів якості готельних послуг є нормативно-правовий документ, затверджений державним органом стандартизації, а також застосування та обов'язкове використання стандартних методів у готелі. Стандарт – це зразок, еталон, модель і нормативно-технічний документ, що відображає принципи, вимоги і правила типових готелів. Якість у туризмі є потужною зброєю конкуренції на міжнародному туристичному ринку, і туристи, які задоволені обслуговуванням у готелях, ресторанах, сервісних бюро та туристичних об’єктах окремих країн, стають їх активними промоутерами. Комплексний і складний характер туристичного обслуговування зумовлений тим, що більшість послуг безпосередньо пов'язана зі споживанням, послуги надаються безпосередньо туристам, туристам пропонується широкий спектр послуг і товарів з різними технологіями виробництва і обслуговування, Обслуговування туристів здійснюється в процесі функціонування різних елементів логістичної інфраструктури, а послуги і товари, що пропонуються туристам, формуються в результаті різних видів діяльності. Репутація готелю залежить від людського фактору. Повинні бути розроблені стандарти прийому, розміщення та обслуговування, ресторану, бару та інших підрозділів готелю. Персонал повинен мати чисту уніформу та акуратну зачіску, бути професійним і досвідченим, а також демонструвати хорошу поведінку та чесність. Міжнародні стандарти обслуговування включають швидке та гнучке обслуговування гостей, чітке виконання замовлень, доброзичливість та ввічливість. Найважливіші деталі стандартів управління готелем включають уважність до гостей, стандарти зовнішнього вигляду, конфіденційність інформації, наявність інформації про роботу, терплячість і уважність, відповідальність і наявність достатнього персоналу для ефективного та послідовного обслуговування. Ці стандарти необхідні для успішного готельного бізнесу, оскільки вони забезпечують підтримку якості менеджменту в нестабільному конкурентному середовищі.

Current-voltage characteristics of Mn1-xFexIn2Se4, at temperatures between 100-360K, have been determined under different conditions for the layered semimagnetic semiconductor system Mn1-xFexIn2Se4. The temperature dependence of the conductivity for the different samples presents two regions, which are characterized by different slopes. The activation energies of the electron trapping centers were determined by a linear fit for each region.

The growth of InGaPN epitaxial layers on silicon substrates by metal-organic vapour phase epitaxy using dimethylhydrazine, trimethylgallium, trimethylindium and phosphine precursors is reported. In order to reduce interface problems connected with hetero-bonds and antiphase domain formation, a very thin buffer layer of GaP has been grown on the hydrophobic silicon surface. The layers are prepared at temperature of 630°C and have been characterized by high-resolution X-ray diffraction, atomic force microscopy, photoluminescence and Raman scattering. The growth occurs through 3 dimensional processes. Mean surface roughness as high as 20-30 nm is observed and phase separation is evidenced

International audience

Raman scattering and photoluminescence properties of GaAs1-xNx epitaxial layers grown on GaAs and Ge substrates by means of metalorganic vapor phase epitaxy (MOVPE) have been investigated. Trimethylgallium (TMG), AsH3 and Dimethylhydrazine (DMHy) were used as precursors in the setup with horizontal reactor. The samples were grown at atmospheric pressure at temperature 5000C and varying the molar ratio between DMHy and the other precursors. Nitrogen in diluted GaAsN has been detected by Raman scattering through the observation of the nitrogen local vibrational mode at about 470 cm-1. Weak GaAs second order Raman features like TO and LO peaks are observed between 500 and 600 cm-1, evidencing alloy disorder. The photoluminescence (PL) properties have also been investigated on as grown samples. The PL peak energy of a GaAs1-xNx is 1.15 eV at 77 K, when the N content (x) is about 2.1 %.

Nominally undoped Ge epitaxial layers were deposited on Ge and GaAs substrates by means of Metal-Organic Vapor Phase (MOVPE) using a novel Germanium source, isobutylgermane (iBuGe), by Rohm and Haas Electronic Materials LLC (USA). High Resolution X-ray Diffraction, Atomic Force Microscopy and Raman spectroscopy were combined to characterize the layers. Ge layers were deposited using AsH3 as a surfactant and several growth procedures were tested. The use of arsine reduced the growth rate and also significantly improved the epitaxial quality and surface roughness.

National audience

23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 394-398, In the present work Ge layers were epitaxially deposited on Ge by Metal Organic Vapour Phase Epitaxy (MOVPE) using Iso-Butyl Germane (iBuGe) as organic precursor. Samples were deposited using either only iBuGe or adding doses of AsH3 as surfactant to obtain a better surface morphology. The nominally undoped layers were analysed by Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM) and High Resolution X-Ray Diffraction (HRXRD). When iBuGe partial pressure was below 4x10-6, the Ge layers showed good morphology and crystallographic quality but for higher values of iBuGe partial pressure pits on the surface were evidenced by both AFM and TEM, with the pit density related to the growth rate. Better results in terms of surface morphology and FWHM x-ray diffraction profile were obtained on exactly oriented (001) Ge substrates. A good Ge/Ge interface with a low defect density was observed by TEM cross section micrographs. The use of AsH3 as surfactant permitted to increase the iBuGe partial pressure used in the growth without degrading the layer properties. A decrease in the growth rate up to 4 times was observed with the use of surfactant. HR-XRD measurements evidenced a good crystal structure of the epitaxial germanium layer, while TEM revealed the presence of a high defect density at the interface. Using a p-type substrate as base and an n-type Ge layer as emitter, a p-n junction was realised by standard photolitographic techniques and Au as ohmic contacts. The I-V characterisation on these non passivated junctions showed a good rectifying behaviour and an open circuit voltage (VOC) comparable to the one reported in literature for diffused Ge cells.

International audience