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Mn1−xFexIn2Se4 SINGLE CRYSTALS AND THEIR ELECTRICAL PROPERTIES

Authors :
Sagredo V.
Attolini G.
Musayeva N.
Source :
International journal of materials engineering and technology 2 (2009): 29–37., info:cnr-pdr/source/autori:Sagredo V.; Attolini G.; Musayeva N./titolo:Mn1−xFexIn2Se4 SINGLE CRYSTALS AND THEIR ELECTRICAL PROPERTIES/doi:/rivista:International journal of materials engineering and technology/anno:2009/pagina_da:29/pagina_a:37/intervallo_pagine:29–37/volume:2
Publication Year :
2009
Publisher :
Pushpa Publishing House, Allahabad , India, 2009.

Abstract

Current-voltage characteristics of Mn1-xFexIn2Se4, at temperatures between 100-360K, have been determined under different conditions for the layered semimagnetic semiconductor system Mn1-xFexIn2Se4. The temperature dependence of the conductivity for the different samples presents two regions, which are characterized by different slopes. The activation energies of the electron trapping centers were determined by a linear fit for each region.

Details

Language :
English
Database :
OpenAIRE
Journal :
International journal of materials engineering and technology 2 (2009): 29–37., info:cnr-pdr/source/autori:Sagredo V.; Attolini G.; Musayeva N./titolo:Mn1−xFexIn2Se4 SINGLE CRYSTALS AND THEIR ELECTRICAL PROPERTIES/doi:/rivista:International journal of materials engineering and technology/anno:2009/pagina_da:29/pagina_a:37/intervallo_pagine:29–37/volume:2
Accession number :
edsair.cnr...........c749f3c87020b94a76a40bb0c508aba3