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336 results on '"Muramatsu, Makoto"'

1. Advanced processes in metal-oxide resists for high-NA EUV lithography

Author

Dinh, Cong Que, primary, Nagahara, Seiji, additional, Cho, Kayoko, additional, Tomori, Hikari, additional, Kuwahara, Yuhei, additional, Onitsuka, Tomoya, additional, Okada, Soichiro, additional, Kawakami, Shinichiro, additional, Hara, Arisa, additional, Fujimoto, Seiji, additional, Muramatsu, Makoto, additional, Tsuzuki, Reiko, additional, Liu, Xiang, additional, Thiam, Arame, additional, Feurprier, Yannick, additional, Nafus, Kathleen, additional, Carcasi, Michael A., additional, Huli, Lior, additional, Kato, Kanzo, additional, Krawicz, Alexandra, additional, Kocsis, Michael, additional, De Schepper, Peter, additional, McQuade, Lauren, additional, Kasahara, Kazuki, additional, Garcia Santaclara, Jara G., additional, Hoefnagels, Rik, additional, La Fontaine, Bruno, additional, Miyakawa, Ryan H., additional, Anderson, Chris N., additional, and Naulleau, Patrick P., additional

Published
2024
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5. Advanced development for contact-holes of metal-oxide resists

Author

Dinh, Cong Que, primary, Nagahara, Seiji, additional, Kato, Kanzo, additional, Kawakami, Shinichiro, additional, Kuwahara, Yuhei, additional, Okada, Soichiro, additional, Cho, Kayoko, additional, Tomori, Hikari, additional, Nakamura, Junji, additional, Terada, Shoichi, additional, Muramatsu, Makoto, additional, Krawicz, Alexandra, additional, McInerney, Kathleen, additional, Antonovich, Nathan, additional, and Huli, Lior, additional

Published
2023
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12. Advanced development methods for high-NA EUV lithography

Author

Dinh, Cong Que, primary, Nagahara, Seiji, additional, Kuwahara, Yuhei, additional, Dauendorffer, Arnaud, additional, Okada, Soichiro, additional, Fujimoto, Seiji, additional, Kawakami, Shinichiro, additional, Shimura, Satoru, additional, Muramatsu, Makoto, additional, Cho, Kayoko, additional, Liu, Xiang, additional, Nafus, Kathleen, additional, Carcasi, Michael A., additional, Agarwal, Ankur, additional, Somervell, Mark H., additional, Huli, Lior, additional, Kato, Kanzo, additional, Kocsis, Michael, additional, De Schepper, Peter, additional, Meyers, Stephen T., additional, McQuade, Lauren, additional, Kasahara, Kazuki, additional, Garcia Santaclara, Jara, additional, Hoefnagels, Rik, additional, Anderson, Chris, additional, and Naulleau, Patrick, additional

Published
2023
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14. Recent advances in EUV patterning in preparation towards high-NA EUV

Author

Nagahara, Seiji, primary, Dauendorffer, Arnaud, additional, Thiam, Arame, additional, Liu, Xiang, additional, Kuwahara, Yuhei, additional, Dinh, Cong Que, additional, Okada, Soichiro, additional, Kawakami, Shinichiro, additional, Genjima, Hisashi, additional, Nagamine, Noriaki, additional, Muramatsu, Makoto, additional, Shimura, Satoru, additional, Tsuboi, Atsushi, additional, Nafus, Kathleen, additional, Feurprier, Yannick, additional, Demand, Marc, additional, Ramaneti, Rajesh, additional, Foubert, Philippe, additional, De Simone, Danilo, additional, and Vandenberphe, Geert, additional

Published
2023
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17. Construction of a New Sports Program using DX－Aiming to Revitalize Organizational Activities and Foster Sports Enthusiasts－

Author

ISHIHARA, Kajyu, primary, EMOTO, Sota, additional, OHARA, Ittetsu, additional, KAZAOKA, Sho, additional, TAKANO, Keito, additional, TAKAHASHI, Masumi, additional, TOMIZAWA, Sho, additional, HAGIWARA, Takato, additional, HARASAKI, Ayato, additional, HORIO, Taiga, additional, MURAMATSU, Makoto, additional, MOCHIZUKI, Tsubasa, additional, YAGI, Hoshito, additional, YABUSAKI, Kaito, additional, WAGI, Ryusei, additional, and ONUMA, Hiroyasu, additional

Published
2023
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20. EUV Metal Oxide Resist Development Technology for Improved Sensitivity, Roughness and Pattern Collapse Margin for High Volume Manufacturing

Author

Dinh, Cong Que, primary, Nagahara, Seiji, additional, Kuwahara, Yuhei, additional, Dauendorffer, Arnaud, additional, Yoshida, Keisuke, additional, Okada, Soichiro, additional, Onitsuka, Tomoya, additional, Kawakami, Shinichiro, additional, Shimura, Satoru, additional, Muramatsu, Makoto, additional, Yoshihara, Kosuke, additional, Petersen, John S., additional, Simone, Danilo De, additional, Foubert, Philippe, additional, Vandenberghe, Geert, additional, Huli, Lior, additional, Grzeskowiak, Steven, additional, Krawicz, Alexandra, additional, Bae, Nayoung, additional, Kato, Kanzo, additional, Nafus, Kathleen, additional, and Raley, Angélique, additional

Published
2022
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21. Holistic litho-etch development to address patterning challenges towards high NA EUV

Author

Nagahara, Seiji, primary, Dauendorffer, Arnaud, additional, Liu, Xiang, additional, Onitsuka, Tomoya, additional, Genjima, Hisashi, additional, Nagamine, Noriaki, additional, Kuwahara, Yuhei, additional, Kamei, Yuya, additional, Kawakami, Shinichiro, additional, Muramatsu, Makoto, additional, Shimura, Satoru, additional, Nafus, Kathleen, additional, Oikawa, Noriaki, additional, Feurprier, Yannick, additional, Demand, Marc, additional, Thibaut, Sophie, additional, Krawicz, Alexandra, additional, Grzeskowiak, Steven, additional, Lutker-Lee, Katie, additional, Liu, Eric, additional, Catano, Christopher, additional, LaRose, Joshua D., additional, Shearer, Jeffrery C., additional, Huli, Lior, additional, Foubert, Philippe, additional, and De Simone, Danilo, additional

Published
2022
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26. Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges

Author

Raley, Angélique, primary, Huli, Lior, additional, Grzeskowiak, Steven, additional, Lutker-Lee, Katie, additional, Krawicz, Alexandra, additional, Feurprier, Yannick, additional, Liu, Eric, additional, Kato, Kanzo, additional, Nafus, Kathleen, additional, Dauendorffer, Arnaud, additional, Bae, Nayoung, additional, LaRose, Josh, additional, Metz, Andrew, additional, Hetzer, Dave, additional, Honda, Masanobu, additional, Nishizuka, Tetsuya, additional, Ko, Akiteru, additional, Okada, Soichiro, additional, Ido, Yasuyuki, additional, Onitsuka, Tomoya, additional, Kawakami, Shinichiro, additional, Fujimoto, Seiji, additional, Shimura, Satoru, additional, Dinh, Cong Que, additional, Muramatsu, Makoto, additional, Biolsi, Peter, additional, Mochiki, Hiromasa, additional, and Nagahara, Seiji, additional

Published
2022
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28. Approaches to enable patterning of tight pitches towards high NA EUV

Author

Tadatomo, Hiroki, primary, Dauendorffer, Arnaud, additional, Onitsuka, Tomoya, additional, Genjima, Hisashi, additional, Ido, Yasuyuki, additional, Okada, Soichiro, additional, Kuwahara, Yuhei, additional, Hara, Arisa, additional, Dinh, Congque, additional, Fujimoto, Seiji, additional, Kawakami, Shinichiro, additional, Muramatsu, Makoto, additional, Shimura, Satoru, additional, Nafus, Kathleen, additional, Oikawa, Noriaki, additional, Ono, Kenta, additional, Feurprier, Yannick, additional, Demand, Marc, additional, Negreira, Ainhoa R., additional, Nagahara, Seiji, additional, Victor, Blanco, additional, Foubert, Philippe, additional, and De Simone, Danilo, additional

Published
2022
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30. Recent advances in EUV patterning in preparation towards high-NA EUV

Author

Guerrero, Douglas, Amblard, Gilles R., Nagahara, Seiji, Dauendorffer, Arnaud, Thiam, Arame, Liu, Xiang, Kuwahara, Yuhei, Dinh, Cong Que, Okada, Soichiro, Kawakami, Shinichiro, Genjima, Hisashi, Nagamine, Noriaki, Muramatsu, Makoto, Shimura, Satoru, Tsuboi, Atsushi, Nafus, Kathleen, Feurprier, Yannick, Demand, Marc, Ramaneti, Rajesh, Foubert, Philippe, De Simone, Danilo, and Vendenberghe, Geert

Published
2023
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32. Addressing EUV patterning challenges towards the limits of NA 0.33 EUV exposure

Author

Dauendorffer, Arnaud, primary, Onitsuka, Tomoya, additional, Tadatomo, Hiroki, additional, Yoshida, Keisuke, additional, Shiozawa, Takahiro, additional, Genjima, Hisashi, additional, Nagamine, Noriaki, additional, Kamei, Yuya, additional, Okada, Soichiro, additional, Kawakami, Shinichiro, additional, Muramatsu, Makoto, additional, Shimura, Satoru, additional, Nafus, Kathleen, additional, Oikawa, Noriaki, additional, Feurprier, Yannick, additional, Demand, Marc, additional, Romo Negreira, Ainhoa, additional, Nagahara, Seiji, additional, Dinh, Congque, additional, Kljucar, Luka, additional, De Simone, Danilo, additional, and Foubert, Philippe, additional

Published
2021
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33. Nano-scale effects of selective spin-on deposition

Author

Yuanyi Zhang, Mark Somervell, Sean P. Berglund, Colton D'Ambra, Muramatsu Makoto, Rachel A. Segalman, Christopher M. Bates, Craig J. Hawker, Michael A. Carcasi, Lior Huli, and Ryan L. Burns

Subjects
chemistry.chemical_classification, Spin coating, Materials science, chemistry, Monolayer, Deposition (phase transition), Nanometre, Nanotechnology, Dielectric, Polymer, Nanoscopic scale, Microscale chemistry
Abstract

Bottom-up patterning approaches are gaining traction as the trade-offs between resolution, throughput, and cost continually run into limitations for advanced semiconductor manufacturing technologies. With these constraints in mind, we have previously explored spin-on selective deposition of polymers over microscale features for ultimate use in ALD technologies. Two methods have previously been explored. The first approach considered a spin-on self-assembled monolayer (SAM) protecting either a metal or dielectric pre-pattern followed by a selective spin-on polymer coating. The second approach customized a synthetic fluorinated polymer tailoring the surface energies to the structures and sizes of interest in order to achieve selective deposition. In this work, pre-patterned copper and dielectric patterns are explored for selective deposition using pitch ranges from 128nm – 1000nm. A combination of spin-on SAMs along with custom synthesized polymers are studied. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) are used to characterize final polymer coatings and the impact of polymer structure, solution concentration, and processing conditions will be discussed. Ultimately, it will be shown that the combination of both spin-on SAMs and custom synthesized polymers successfully results in selective deposition over nanometer scale patterns, increasing previous resolution by two orders of magnitude.

Published
2021

35. Swelling and dissolution kinetics of poly(4-hydroxystyrene) in tetrabutylammonium hydroxide (TBAH) aqueous solutions studied by quartz crystal microbalance (QCM) methodâ€"in comparison with tetramethylammonium hydroxide (TMAH) aqueous solutions

Author

Ito, Yuko Tsutsui, Betsumiya, Hitomi, Kozawa, Takahiro, Sakamoto, Kazuo, and Muramatsu, Makoto

Abstract

The dissolution (including the formation of a transient swelling layer) of a resist polymer is key to realizing ultrafine patterning. However, the details of the dissolution of resist polymers remain unclarified. In this study, the swelling and dissolution kinetics of poly(4-hydroxystyrene) (PHS) films in tetramethylammonium hydroxide (TMAH) and tetrabutylammonium hydroxide (TBAH) aqueous solutions were investigated by a quartz crystal microbalance method. PHS is a typical backbone polymer (a dissolution agent) of chemically amplified resists. The swelling and dissolution kinetics of PHS were observed by changing the protection ratio of the hydroxyl groups of PHS and the alkaline concentration in developers. Not only the dissolution rate but also the mode of dissolution depended on the molecular structure of tetraalkylammonium cations. For polymer matrices with strong hydrogen bond networks such as PHS, the penetration of tetrabutylammonium cations is considered to be strongly suppressed by their long alkyl chains. [ABSTRACT FROM AUTHOR]

Published
2022
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37. EUV resist performance enhancement by UV flood exposure for high NA EUV lithography

Author

Dinh, Cong Que, primary, Nagahara, Seiji, additional, Yoshida, Keisuke, additional, Kondo, Yoshihiro, additional, Muramatsu, Makoto, additional, Yoshihara, Kosuke, additional, Shimada, Ryo, additional, Moriya, Teruhiko, additional, Nafus, Kathleen, additional, Petersen, John, additional, DeSimone, Danilo, additional, Foubert, Philippe, additional, and Vandenberghe, Geert, additional

Published
2021
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39. Nano-scale effects of selective spin-on deposition

Author

Burns, Ryan L., primary, Zhang, Yuanyi, additional, D'Ambra, Colton, additional, Somervell, Mark H., additional, Berglund, Sean, additional, Carcasi, Michael, additional, Huli, Lior, additional, Muramatsu, Makoto, additional, Segalman, Rachel A., additional, Hawker, Craig J., additional, and Bates, Chris, additional

Published
2021
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40. Stratified polymer dissolution model based on impedance data from quartz crystal microbalance method

Author

Jin, Yuqing, Ito, Yuko Tsutsui, Kozawa, Takahiro, Hasebe, Takashi, Sakamoto, Kazuo, and Muramatsu, Makoto

Abstract

In lithography, the development process is essential for achieving high fidelity. The quartz crystal microbalance (QCM) method is a primary tool for analyzing the dissolution kinetics of resist polymers by measuring their frequency and impedance. However, impedance charts are underutilized. We propose a stratified polymer dissolution model (SPDM) to simulate polymer dissolution in developers and analyze QCM charts. Using SPDM, we accurately reproduced both the frequency and impedance charts. The feature values describing the dissolution kinetics were successfully extracted from the QCM charts, enabling the investigation of the effects of developers on dissolution kinetics.

Published
2024
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41. Dissolution dynamics of partially protected poly(4-hydroxystyrene) in organic developers investigated by a quartz crystal microbalance (QCM) method

Author

Ito, Yuko Tsutsui, Watanabe, Kyoko, Kozawa, Takahiro, Sakamoto, Kazuo, and Muramatsu, Makoto

Abstract

Poly(4-hydroxystyrene) (PHS) molecules in solid films are connected to each other through polar and nonpolar molecular interaction and hydrogen bonds. Although the dissociation of phenolic hydroxyl groups plays a major role in the dissolution of PHS films in tetramethylammonium hydroxide (TMAH) aqueous developer, it is important to clarify the effects of other interactions. In this study, we investigated the dissolution dynamics of partially protected PHS in organic developer by a quartz crystal microbalance method to deepen the fundamental understanding of the dissolution dynamics of chemically amplified resists. The dissolution dynamics in the solvents, in which the phenolic hydroxyl groups are hardly dissociated, was measured. In a 50 vol% methanol aqueous developer, a large swelling was observed. By decreasing the polarity of the developer, the dissolution dynamics was significantly changed. In the hexyl acetate, the dissolution kinetics of PHS films became similar to that in TMAH aqueous developer although the dissolution mechanism is different.

Published
2024
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48. Improvement of EUV processes for high volume manufacturing

Author

Muramatsu, Makoto, primary, Tadatomo, Hiroki, additional, Onitsuka, Tomoya, additional, Yoshida, Keisuke, additional, Dauendorffer, Arnaud, additional, Shiozawa, Takahiro, additional, Okada, Soichiro, additional, Kawakami, Shinichiro, additional, and Shimura, Satoru, additional

Published
2020
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