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1. Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries

Author

Marco A. Giambra, Christian Benz, Fan Wu, Maximillian Thurmer, Geethu Balachandran, Antonio Benfante, Riccardo Pernice, Himadri Pandey, Muraleetharan Boopathi, Min-Ho Jang, Jong-Hyun Ahn, Salvatore Stivala, Enrico Calandra, Claudio Arnone, Pasquale Cusumano, Alessandro Busacca, Wolfram H. P. Pernice, and Romain Danneau

Subjects
Graphene, metal-oxide graphene field-effect transistors (MOGFETs), microwave transistors, clamped geometries, meandered graphene contacts, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show improved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.

Published
2019
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2. Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries

Author

Muraleetharan Boopathi, Jong Hyun Ahn, P. Cusumano, E.F. Calandra, F. Wu, Maximillian Thurmer, Christian Benz, Salvatore Stivala, Himadri Pandey, C. Arnone, Geethu Balachandran, Min-Ho Jang, Romain Danneau, Alessandro Busacca, Antonio Benfante, Wolfram H. P. Pernice, Marco A. Giambra, Riccardo Pernice, Giambra, Marco A., Benz, Christian, Wu, Fan, Thurmer, Maximillian, Balachandran, Geethu, Benfante, Antonio, Pernice, Riccardo, Pandey, Himadri, Boopathi, Muraleetharan, Jang, Min-Ho, Ahn, Jong-Hyun, Stivala, Salvatore, Calandra, Enrico, Arnone, Claudio, Cusumano, Pasquale, Busacca, Alessandro, Pernice, Wolfram H. P., and Danneau, Romain

Subjects
Work (thermodynamics), Fabrication, Materials science, Transconductance, Oxide, 02 engineering and technology, Settore ING-INF/01 - Elettronica, 01 natural sciences, law.invention, chemistry.chemical_compound, law, 0103 physical sciences, Electrical and Electronic Engineering, 010302 applied physics, business.industry, Graphene, Graphene, metal-oxide graphene field-effect transistors (MOGFETs), microwave transistors, clamped geometries, meandered graphene contacts, Transistor, Settore ING-INF/02 - Campi Elettromagnetici, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, chemistry, Logic gate, Parasitic element, Optoelectronics, 0210 nano-technology, business, Biotechnology
Abstract

In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show improved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.

Published
2019

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