1. Model of Ni-63 battery with realistic PIN structure.
- Author
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Munson IV, Charles E., Arif, Muhammad, Streque, Jeremy, Belahsene, Sofiane, Martinez, Anthony, Ramdane, Abderrahim, El Gmili, Youssef, Salvestrini, Jean-Paul, Voss, Paul L., and Ougazzaden, Abdallah
- Subjects
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ELECTRON-hole droplets , *ELECTRIC batteries , *ENERGY development , *SCANNING electron microscopes , *RADIOACTIVE substances - Abstract
GaN, with its wide bandgap of 3.4 eV, has emerged as an efficient material for designing high-efficiency betavoltaic batteries. An important part of designing efficient betavoltaic batteries involves a good understanding of the full process, from the behavior of the nuclear material and the creation of electron-hole pairs all the way through the collection of photo-generated carriers. This paper presents a detailed model based on Monte Carlo and Silvaco for a GaN-based betavoltaic battery device, modeled after Ni-63 as an energy source. The accuracy of the model is verified by comparing it with experimental values obtained for a GaN-based p-i-n structure under scanning electron microscope illumination. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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