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Model of Ni-63 battery with realistic PIN structure.
- Source :
-
Journal of Applied Physics . 2015, Vol. 118 Issue 10, p105101-1-105101-6. 6p. 1 Color Photograph, 2 Diagrams, 3 Charts, 4 Graphs. - Publication Year :
- 2015
-
Abstract
- GaN, with its wide bandgap of 3.4 eV, has emerged as an efficient material for designing high-efficiency betavoltaic batteries. An important part of designing efficient betavoltaic batteries involves a good understanding of the full process, from the behavior of the nuclear material and the creation of electron-hole pairs all the way through the collection of photo-generated carriers. This paper presents a detailed model based on Monte Carlo and Silvaco for a GaN-based betavoltaic battery device, modeled after Ni-63 as an energy source. The accuracy of the model is verified by comparing it with experimental values obtained for a GaN-based p-i-n structure under scanning electron microscope illumination. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 118
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 109448712
- Full Text :
- https://doi.org/10.1063/1.4930870