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2. 40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications

4. Insight Into HCI Reliability on I/O Nitrided Devices

8. PD-SOI CMOS and SiGe BiCMOS Technologies for 5G and 6G communications

21. Experimental and theoretical investigation of the ‘apparent’ mobility degradation in Bulk and UTBB-FDSOI devices: A focus on the near-spacer-region resistance

24. TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment

26. Impact of Inside Spacer Process on Fully Self-Aligned 250 GHz SiGe:C HBTs Reliability Performances: a - Si vs. Nitride

27. Experimental and theoretical investigation of the ‘apparent’ mobility degradation in Bulk and UTBB-FDSOI devices: A focus on the near-spacer-region resistance

30. 14nm FDSOI technology for high speed and energy efficient applications

36. ETSOI CMOS for System-on-Chip Applications Featuring 22nm Gate Length, Sub-100nm Gate Pitch, and 0.08mm2 RAM Cell

37. UTBB FDSOI transistors with dual STI for a multi-Vt strategy at 20nm node and below

40. Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS

41. 28nm FDSOI technology platform for high-speed low-voltage digital applications

42. Enabling the use of ion implantation for ultra-thin FDSOI n-MOSFETs

44. Extremely Thin SOI (ETSOI) - a Planar CMOS Technology for System-on-chip Applications

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