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CAM/CAD composites are widely used as dental restoration materials due to their resistivity to wear. The purpose of this study was to determine the effect of human gingival fibroblast cells on three different computer-aided design/computer-aided manufacturing (CAD/CAM) hybrid materials with resin-based composites (RBC) and to assess their stability following cell growth. The CAM/CAD dental materials were investigated in different conditions as follows: (i) cells (human gingival fibroblasts, HFIB-Gs) incubated over the material for each sample, denoted as A; (ii) reference, the raw material, denoted as B; and (iii) materials incubated in DMEM medium, denoted as C. We employed Vicker's hardness test, EDS, SEM, and AFM measurements as well as Raman spectroscopy to carefully characterize the surface modifications and the structural integrity of the CAM/CAD materials before and after fibroblast cell culture. The analysis of the surface in terms of morphology, roughness, structure, and plastic deformation presented no significant difference after incubation in cells or in media, proving their extraordinary stability and resilience to biofilm formation. [ABSTRACT FROM AUTHOR]

This paper reports the onset of ferroelectricity in NiO by breaking the crystallographic symmetry with oxygen vacancies created by N doping. Nitrogen-doped NiO was grown at room temperature by RF sputtering of Ni target in Ar–O2–N2 plasma on silicon and fused silica substrates. The impact of the nitrogen doping of NiO on microstructural, optical, and electrical properties has been investigated. According to x-ray diffraction investigations, by increasing the N doping level in NiO, a transition from (002) to a (111) preferential orientation for the cubic NiO phase was observed, as well as a lattice strain relaxation, that is usually ascribed to structural defect formation in crystal. The x-ray diffraction pole figures the presence of a distorted cubic structure in NiO and supports the Rietveld refinement findings related to the strain, which pointed out that nitrogen doping fosters lattice imperfections formation. These findings were found to be in agreement with our far-infrared measurements that revealed that upon nitrogen doping a structural distortion of the NiO cubic phase appears. X-ray photoemission spectroscopy measurements reveal the presence of oxygen vacancies in the NiO film following nitrogen doping. Evidence of ferroelectricity in nitrogen-doped NiO thin films has been provided by using the well-established Sawyer–Tower method. The results reported here provide the first insights on oxygen-vacancy induced ferroelectricity in nitrogen-doped nickel oxide thin films. [ABSTRACT FROM AUTHOR]

We present dielectric and anelastic spectroscopy measurements of the molecular piezoelectric TMCM-MnCl 3 and TMCM-Mn 0.95 M 0.05 Cl 3 (M = Cu, Fe, Ni; TMCM = trimethylchlorometylammonium), whose powders were pressed into discs and bars and deposited as films on Si by Matrix-Assisted Pulsed Laser Evaporation (MAPLE). As in other molecular ferroelectrics, the dielectric permittivity ϵ ′ drops at the structural transition temperature T C , below which the number of directions that the polar TMCM molecules visit is reduced, with the formation of ferroelectric domains. Concomitantly, the Young's modulus E starts increasing and the elastic energy loss has a step-like increase, attributable to the motion of the domain walls. Both the dielectric and elastic anomalies indicate the improper character of the ferroelectric transition, where the ordering of the molecular orientations is not driven by the cooperative interaction of their electric dipoles. Below room temperature, at least two thermally activated relaxation processes appear both in the dielectric and anelastic spectra, whose real and imaginary parts measured at several frequencies can be fit with the Havriliak–Negami formula. The microscopic parameters so-obtained indicate that they are due to point defects, and it is argued that they are Cl vacancies and their complexes with TMCM vacancies. The considerable width of these relaxation maxima is explained by the geometry of the hexagonal perovskite structure. The partial substitution of Mn with 5% Ni has little effect on the anelastic and dielectric spectra, while Cu and, especially, Fe cause a large enhancement of the losses attributed to domain wall relaxation, with substantial contributions also above T C . The condensation of water from the humidity in the powders compacted by cold pressing was observed and discussed. The piezoelectric activity of the films was assessed by PFM. [ABSTRACT FROM AUTHOR]

Orthorhombic HfO2 exhibits nanoscale ferroelectricity that opens the perspective of ultra-scalable CMOS integration of ferroelectric memories. However, many aspects of the metastable orthorhombic crystallization mechanisms still need to be elucidated and new fabrication methods are of high interest. In this paper, the atomically resolved crystal structure of HfO2 is a 3-layer structure with a Ge-rich HfO2 intermediate layer capped by a top (cap) HfO2 layer and cladded by a bottom HfO2 layer. There is a continuity of crystal growth from the top and bottom HfO2 layers into the intermediate layer. A spatial transition from a monoclinic phase to an orthorhombic phase was revealed within a region of a few atomic layers at the interface between capped and intermediate HfO2 layers. This result suggests the mechanism of orthorhombic and monoclinic phase formation by a martensitic-like transformation of the initially grown tetragonal phase. The sample fabrication method we used involved magnetron sputtering deposition of the 3-layer structures, i.e. a stack of top HfO2/Ge-rich HfO2 intermediate/bottom HfO2 layers, followed by rapid thermal annealing. It results in self-optimized orthorhombic crystallization of HfO2 by Ge nanoparticle segregation in the intermediate layer. The ferroelectric effects are revealed by polarization–voltage hysteresis loops and piezoresponse force microscopy measurements. The atomistic computations performed by using the density functional theory support the experimental results by showing that the Ge doping of HfO2 leads to orthorhombic phase stabilization and increased Berry phase polarization. [ABSTRACT FROM AUTHOR]

Motivated by the need to open a bandgap in graphene, we show experimentally that the CMOS-compatible ferroelectric HfZrO substrate induces a bandgap of 0.18 eV in graphene monolayer, which allows top-gate graphene/HfZrO/SiO2/Si field-effect transistors to have high on/off current ratio, of about 103, at small drain voltages, of 0.5 V, and for gate voltage spans of only 3.5 V. In addition, these transistors have a very high transconductance, of about 1 mS, and carrier mobilities of 7900 cm2 Vs−1. The results show that this relatively simple and wafer-scale compatible bandgap opening method in graphene renders this material useful for digital low-power electronics. [ABSTRACT FROM AUTHOR]

In this study we describe a simple method to fabricate microarrays of polystyrene microbeads (PS-μbeads) on Thermanox coverslip surfaces using laser induced forward transfer (LIFT). A triazene polymer layer which acts as a dynamic release layer and propels the closely packed microspheres on the receiving substrate was used for this approach. The deposited features were characterized by optical microscopy, scanning electron microscopy, atomic force microscopy, and Raman spectroscopy. Ultrasonication was used to test the adherence of the transferred beads. In addition, the laser ejection of the PS-μbead pixels was investigated by time resolved shadowgraphy. It was found that stable PS-μbeads micropatterns without any specific immobilization process could be realized by LIFT. These results highlight the increasing role of LIFT in the development of biomaterials, drug delivery, and tissue engineering. [ABSTRACT FROM AUTHOR]