1. Negative Fermi-level Pinning Effect of Metal/n-GaAs(001) Junction with Graphene Interlayer
- Author
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Yoon, Hoon Hahn, Song, Wonho, Jung, Sungchul, Kim, Junhyung, Mo, Kyuhyung, Choi, Gahyun, Jeong, Hu Young, Lee, Jong Hoon, and Park, Kibog
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics ,Condensed Matter - Materials Science - Abstract
It is demonstrated that the electric dipole layer due to the overlapping of electron wavefunctions at metal/graphene contact results in negative Fermi-level pinning effect on the region of GaAs surface with low interface-trap density in metal/graphene/n-GaAs(001) junction. The graphene interlayer takes a role of diffusion barrier preventing the atomic intermixing at interface and preserving the low interface-trap density region. The negative Fermi-level pinning effect is supported by the Schottky barrier decreasing as metal work-function increasing. Our work shows that the graphene interlayer can invert the effective work-function of metal between $high$ and $low$, making it possible to form both Schottky and Ohmic-like contacts with identical (particularly $high$ work-function) metal electrodes on a semiconductor substrate possessing low surface-state density., Comment: 19 pages, 10 figures
- Published
- 2019
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