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Negative Fermi-level Pinning Effect of Metal/n-GaAs(001) Junction with Graphene Interlayer
- Source :
- ACS Applied Materials & Interfaces 11(50), 47182 (2019)
- Publication Year :
- 2019
-
Abstract
- It is demonstrated that the electric dipole layer due to the overlapping of electron wavefunctions at metal/graphene contact results in negative Fermi-level pinning effect on the region of GaAs surface with low interface-trap density in metal/graphene/n-GaAs(001) junction. The graphene interlayer takes a role of diffusion barrier preventing the atomic intermixing at interface and preserving the low interface-trap density region. The negative Fermi-level pinning effect is supported by the Schottky barrier decreasing as metal work-function increasing. Our work shows that the graphene interlayer can invert the effective work-function of metal between $high$ and $low$, making it possible to form both Schottky and Ohmic-like contacts with identical (particularly $high$ work-function) metal electrodes on a semiconductor substrate possessing low surface-state density.<br />Comment: 19 pages, 10 figures
Details
- Database :
- arXiv
- Journal :
- ACS Applied Materials & Interfaces 11(50), 47182 (2019)
- Publication Type :
- Report
- Accession number :
- edsarx.1907.06165
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1021/acsami.9b12074