1. GaInP/GaAs HBT sub-harmonic Gilbert mixers using stacked-LO and leveled-LO topologies
- Author
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Wu, Tzung-Han, Tseng, Sheng-Che, Meng, Chin-Chun, and Huang, Guo-Wei
- Subjects
Gallium arsenide -- Properties ,Gallium arsenide -- Research ,Bipolar transistors -- Usage ,Mixers (Electronics) -- Usage ,Mixers (Electronics) -- Research ,Oscillators (Electronics) -- Usage ,Business ,Computers ,Electronics ,Electronics and electrical industries - Abstract
This paper discusses and demonstrates the most popular sub-harmonic Gilbert mixers in 2-[micro]m GaInP/GaAs HBT technology. High two local oscillators (2LO)-to-RF isolation is important to alleviate the self-mixing problem of the sub-harmonic mixer. The demonstrated GaInP/GaAs HBT stacked-local oscillator (LO) mixer topology has achieved the best 2LO-to-RF isolation when compared with the previous literature. On the other hand, the leveled-LO sub-harmonic mixers have advantages in terms of the high speed and low dc supply voltage at the cost of much larger LO pumping power. Among all the structures, the bottom-LO sub-harmonic mixer has the lowest current consumption and the simplest circuit structure at the expense of the 2LO-to-RF isolation. Index Terms--DC offset, GaInP/GaAs HBT, Gilbert mixer, self-mixing, sub-harmonic mixer, two local oscillators (2LO)-to-RF isolation. Digital Object Identifier 10.1109/TMTT.2007.895169
- Published
- 2007