Search

Abstract The magnetization measurement was performed in the Bi0.3Sb1.7Te3 single crystal. The magnetic susceptibility revealed a paramagnetic peak independent of the experimental temperature variation. It is speculated to be originated from the free-aligned spin texture at the Dirac point. The ARPES reveals that the Fermi level lies below the Dirac point. The Fermi wavevector extracted from the de Haas–van Alphen oscillation is consistent with the energy dispersion in the ARPES. Our experimental results support that the observed paramagnetic peak in the susceptibility curve does not originate from the free-aligned spin texture at the Dirac point.

Abstract The magnetic susceptibility reveals a discontinuity at Néel temperature and a hysteresis loop with low coercive field was observed below Néel temperature. The magnetic susceptibility of zero field cool and field cool processes coincide at a temperature above the discontinuity, and they split at temperature blow the discontinuity. The magnetic susceptibility splitting is larger at lower external magnetic fields. No more magnetic susceptibility splitting was observed at a magnetic field above 7000 Oe which is consistent with the magnetic anisotropy energy. Our study supports that these magnetic susceptibility characteristics originate from an antiferromagnetic order accompanied by weak ferromagnetism.

Abstract Intersected nonpolar ZnO nanosail arrays were fabricated epitaxially on Au‐coated LiGaO2 (010) substrate by chemical vapor deposition. In spite of five growth directions, the novel two‐dimensional (2D) nanostructure was confirmed to be single‐crystalline by X‐ray diffraction and transmission electron microscopy. The anisotropy of growth and surface energy in three directions as well as the equivalency of crystallography should be responsible for the formation of intersected 2D nanosail arrays. Compared with those of polar nanoprisms and nonpolar film samples, the nanosail arrays exhibit superior photoelectrochemical performances of photocurrent density (620 µA cm–2 at 0.2 V vs. SCE) and photoconversion efficiency. The enhanced photoelectrochemical responses were attributed to the unique nanostructure with large surface area and high surface‐to‐volume ratio as well as nonpolar characteristic. This work demonstrates a simple, low‐cost and pattern‐free pathway to prepare aligned 2D nanosail arrays for technological applications.

Red, green, and blue light InxGa1−xN multiple quantum wells have been grown on GaN/γ-LiAlO2 microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for InxGa1-xN multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (InxGa1-xN) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful InxGa1-xN-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications.

Abstract We study the quantum oscillations in the BiSbTe3 topological insulator. In addition to the Shubnikov-de Haas (SdH) oscillation, the Aharonov-Bohm-like (ABL) oscillations are also observed. The ABL oscillation period is constant at each Landau level (LL) which is determined from the SdH oscillation. The shorter ABL oscillation periods are observed at lower LLs. The oscillation period is proportional to the square root of the LL at temperatures. The ratio of the ABL oscillation period to the effective mass is weak LL dependence. The LL-dependent ABL oscillation might originate from the LL-dependent effective mass.

The development of modern cutting-edge technology relies heavily on the huge success and advancement of nanotechnology, in which nanomaterials and nanostructures provide the indispensable material cornerstone. Owing to their nanoscale dimensions with possible quantum limit, nanomaterials and nanostructures possess a high surface-to-volume ratio, rich surface/interface effects, and distinct physical and chemical properties compared with their bulk counterparts, leading to the remarkably expanded horizons of their applications. Depending on their degree of spatial quantization, low-dimensional nanomaterials are generally categorized into nanoparticles (0D); nanorods, nanowires, and nanobelts (1D); and atomically thin layered materials (2D). This review article provides a comprehensive guide to low-dimensional nanomaterials and nanostructures. It begins with the classification of nanomaterials, followed by an inclusive account of nanofabrication and characterization. Both top-down and bottom-up fabrication approaches are discussed in detail. Next, various significant applications of low-dimensional nanomaterials are discussed, such as photonics, sensors, catalysis, energy storage, diverse coatings, and various bioapplications. This article would serve as a quick and facile guide for scientists and engineers working in the field of nanotechnology and nanomaterials.

Abstract Photoluminescent zero-dimensional (0D) quantum dots (QDs) derived from transition metal dichalcogenides, particularly molybdenum disulfide, are presently in the spotlight for their advantageous characteristics for optoelectronics, imaging, and sensors. Nevertheless, up to now, little work has been done to synthesize and explore photoluminescent 0D WS2 QDs, especially by a bottom-up strategy without using usual toxic organic solvents. In this work, we report a facile bottom-up strategy to synthesize high-quality water-soluble tungsten disulfide (WS2) QDs through hydrothermal reaction by using sodium tungstate dihydrate and l-cysteine as W and S sources. Besides, hybrid carbon quantum dots/WS2 QDs were further prepared based on this method. Physicochemical and structural analysis of QD hybrid indicated that the graphitic carbon quantum dots with diameters about 5 nm were held onto WS2 QDs via electrostatic attraction forces. The resultant QDs show good water solubility and stable photoluminescence (PL). The excitation-dependent PL can be attributed to the polydispersity of the synthesized QDs. We found that the PL was stable under continuous irradiation of UV light but can be quenched in the presence of hydrogen peroxide (H2O2). The obtained WS2-based QDs were thus adopted as an electrodeless luminescent probe for H2O2 and for enzymatic sensing of glucose. The hybrid QDs were shown to have a more sensitive LOD in the case of glucose sensing. The Raman study implied that H2O2 causes the partial oxidation of QDs, which may lead to oxidation-induced quenching. Overall, the presented strategy provides a general guideline for facile and low-cost synthesis of other water-soluble layered material QDs and relevant hybrids in large quantity. These WS2-based high-quality water-soluble QDs should be promising for a wide range of applications in optoelectronics, environmental monitoring, medical imaging, and photocatalysis.

Abstract The photocurrent was performed in topological insulator nanosheets with different conductances. The higher photocurrent is observed in the nanosheet with higher conductance. The responsivity is proportional to the nanosheet conductance over two orders. The responsivity is independent of the light power intensity in vacuum, but responsivity drastically decreases at low power intensity in air. The ratio of the responsivity in air to that in vacuum is negatively proportional to the the inverse of the light power intensity. These behaviors are understood as the statistical photocurrent in a system with blocked molecules. The time constant decreases as the thickness increases. A longer time constant is observed in lower atmosphere pressure.

Porous single crystals are desirable for optoelectronic applications, but their fabrication remains challenging. Here the authors produce centimetre-sized macroporous GaN single crystals with electron mobility comparable to that of bulk crystals via in situ inward epitaxial growth on parent LiGaO2 crystals.

Lattice relaxation on wurtzite GaN microdisks grown by plasma-assisted molecular beam epitaxy was systematically studied. The lattice constants of GaN microdisks were evaluated from high-resolution transmission electron microscopy, and the anisotropic strain was then analyzed by observing the microscopic atomic layers. We found that the vertical lattice strain along the c-axis followed a linear relationship, while the lateral lattice strain along the a-axis exhibited a quadratic deviation. The lattice mismatch is about 0.94% at the interface between the GaN microdisks and the γ-LiAlO2 substrate, which induces the anisotropic strain during epi-growth.

We report the facile and economic preparation of two-dimensional (2D) and 0D MoSe2 nanostructures based on systematic and non-toxic top-down strategies. We demonstrate the intrinsic peroxidase-like activity of these MoSe2 nanostructures. The catalytic processes begin with facilitated decomposition of H2O2 by using MoSe2 nanostructures as peroxidase mimetics. In turn, a large amount of generated radicals oxidizes 3,3,5,5-tetramethylbenzidine (TMB) to produce a visible color reaction. The enzymatic kinetics of our MoSe2 nanostructures complies with typical Michaelis–Menten theory. Catalytic kinetics study reveals a ping–pong mechanism. Moreover, the primary radical responsible for the oxidation of TMB was identified to be Ȯ2− by active species-trapping experiments. Based on the peroxidase mimicking property, we developed a new colorimetric method for H2O2 detection by using 2D and 0D MoSe2 nanostructures. It is shown that the colorimetric sensing capability of our MoSe2 catalysts is comparable to other 2D materials-based colorimetric platforms. For instance, the linear range of H2O2 detection is between 10 and 250 μM by using 2D functionalized MoSe2 nanosheets as an artificial enzyme. Our work develops a systematic approach to use 2D materials to construct novel enzyme-free mimetic for a visual assay of H2O2, which has promising prospects in medical diagnosis and food security monitoring.

We have grown high-quality InxGa1-xN/GaN triple-quantum-well microdisks on LiAlO2 substrate by plasma-assisted molecular beam epitaxy. The InxGa1-xN/GaN microdisk with a hexagonal shape of oblique face 28o-angle off c-axis was achieved. The mechanism of the termination of awl-shaped growth and the growth rates of GaN-barrier and InxGa1-xN-well were evaluated and confirmed with the triple quantum wells. Based on the growth rates and 28o-angle geometric shape, one can control the finite size of InGaN/GaN microdisks by plasma-assisted molecular beam epitaxy.

We have grown a high-quality single-phase M-plane GaN on β-LiGaO2 (100) by plasma-assisted molecular beam epitaxy. The Hooke’s law for M-plane GaN was derived by a stress tenor transformation. From the analysis of M-plane GaN microstructure, the lattice strain of M-plane GaN along the [112¯0] and [0001] directions have been estimated. Based on the Hooke’s law, we calculated the ratio of anisotropic stress which was consistent with the ratio of thermal expansion-mismatch between GaN and LiGaO2 (100). We demonstrated that the thermal expansion mismatch was the major factor to degrade the quality of M-plane GaN on β-LiGaO2 (100).

Due to the ultralow saturation properties of the topological insulator (TI), stable and high-power TI-based solid state has become an important issue. In this paper, using a folding V-shaped laser cavity to minimize the residual pump to the broadband saturable absorber, passive Q-switched operations with high power not only at 1.06 μm but at 1.34 μm as well were demonstrated. The 1.06-μm laser of 150 mW and the corresponding repetition rate and a pulse duration of 28.57 kHz and 576 ns, respectively, were performed. The pulse energy of 5.24 μJ and the corresponding peak power of over 9 W were also estimated. Additionally, the laser at 1.3-μm exhibited a passive Q-switched operation with an average power of as high as 326 mW and a pulse duration of 673 ns. A tunable repetition rate of 75.5 to 116.6 kHz, a pulse energy of 2.8 μJ, and the corresponding peak power of 4.2 W were obtained. In addition, the stability of Q-switched pulses was analyzed. The results experimentally extend the promising application of the 2-D material, i.e., exfoliated TI Bi2Te3, in solid-state lasers.

Indium-incorporation with InxGa1-xN layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of InxGa1-xN layer increased to 44.2% with an In/(In + Ga) flux ratio of up to 0.6 for a growth temperature of 620 °C, and quickly dropped with a flux ratio of 0.8. At a fixed In/(In + Ga) flux ratio of 0.6, we found that the indium content decreased as the growth temperature increased from 600 °C to 720 °C and dropped to zero at 780 °C. By adjusting the growth parameters, we demonstrated an appropriate InxGa1-xN layer as a buffer to grow high-indium-content InxGa1-xN/GaN microdisk quantum wells for micro-LED applications.

InN hexagonal thin wurtzite disks were grown on γ-LiAlO2 by plasma-assisted molecular-beam epitaxy at low temperature (470oC). The ( 000 1 ¯ ) InN thin disk was established with the capture of N atoms by the β ¯ -dangling bonds of most-outside In atoms, and then the lateral over-growth of the In atoms were caught by the β ¯ -dangling bonds of the N atoms. From the analyses of high-resolution transmission electron microscopy, the lateral over-grown width was extended to three unit cells at [ 1 1 ¯ 00 ]InN direction for a unit step-layer, resulting in an oblique surface with 73o off c-axis.

The characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy on LiAlO2 substrate was studied by cathodoluminescence and photoluminescence measurements. We demonstrated that the cathodoluminescence from oblique semi-polar surfaces of mushroom-shaped GaN was much brighter than that from top polar surface due to the reduction of polarization field on the oblique semi-polar surfaces. It implies that the oblique semi-polar surface is superior for the light-emitting surface of wurtzite nano-devices.

MgO doped near stoichiometric LiNbO3 (MgOSLN) crystals have great potential for use in periodically poled structured LiNbO3 (PPLN) for doubling frequency lasers and optical parametric oscillation infrared lasers, because of their high optical damage threshold, single domain characteristics, and very low coercive field. However, few MgOSLN crystals are commercially available in the present market because of the great difficulty in growing them. This paper describes how a hanging crucible Czochralski technique with a newly-designed ship lockage type powder feeding system assisted by numerical simulation was developed for the successful growth of high quality near stoichiometric LiNbO3 (SLN) and MgOSLN (~1 mol%) crystals. The physical properties of the crystals were assessed by measuring their crystallinity, Curie temperature, optical properties, coercive field and thermal properties. These properties, including a coercive field of 1.4 kV mm-1 and a thermal conductivity of 6.61 W (m K)-1 demonstrated that the crystals meet the demands for manufacturing periodically poled crystal devices. This growth method has great potential in the mass production of SLN and other incongruently melting crystals. [ABSTRACT FROM AUTHOR]

A large area of single crystalline LiAl5O8nanorods was synthesized by a vapor phase transport process via Au-catalyzed crystal growth on LiAlO2substrate. The nanorods were grown at high density, with the [111] axis maintained perpendicular to the [100] substrate surface by the direct reaction of CO gas and LiAlO2substrate. The dependence of the nanorods’ diameters and lengths on the growth conditions was systematically investigated. The nanorods were characterized by X-ray diffraction, scanning electron microscopy, and high resolution transmission electron microscopy. These results indicated that the crystallized LiAl5O8nanorods are free of segregations of a second phase and extended defects. The vapor−liquid−solid (VLS) crystal growth mechanism of the single crystalline LiAl5O8is also discussed. [ABSTRACT FROM AUTHOR]

A topological insulating Bi2Te3 single crystal was successfully grown with good uniformity using a home-made resistance-heated floated zone furnace. The temperature-dependent resistance and Hall voltage confirm that the transport is metallic and the overall carriersareholes. The angle and temperature dependence of the quantum Shubnikov–de Haas oscillation period amplitude suggests that the transport comes from the carriers of surface states. The Berry phase, determined from Landau level diagram, also reveals that the transport carriers are Dirac fermions. In contrast with many previous publications, the transport parameters relating to the surface carriers derived from the relationship of the Lifshitz–Kosevich (LK) theory are consistent with angle resolved photoemission spectroscopy results. [ABSTRACT FROM AUTHOR]