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Shubnikov–de Haas oscillation of Bi2Te3 topological insulators with cm-scale uniformity.

Authors :
Shiu-Ming Huang
Shao-Yu Lin
Jui-Fang Chen
Chao-Kuei Lee
Shih-Hsun Yu
Mitch M C Chou
Cheng-Maw Cheng
Hung-Duen Yang
Source :
Journal of Physics D: Applied Physics; 6/29/2016, Vol. 49 Issue 25, p1-1, 1p
Publication Year :
2016

Abstract

A topological insulating Bi<subscript>2</subscript>Te<subscript>3</subscript> single crystal was successfully grown with good uniformity using a home-made resistance-heated floated zone furnace. The temperature-dependent resistance and Hall voltage confirm that the transport is metallic and the overall carriersareholes. The angle and temperature dependence of the quantum Shubnikov–de Haas oscillation period amplitude suggests that the transport comes from the carriers of surface states. The Berry phase, determined from Landau level diagram, also reveals that the transport carriers are Dirac fermions. In contrast with many previous publications, the transport parameters relating to the surface carriers derived from the relationship of the Lifshitz–Kosevich (LK) theory are consistent with angle resolved photoemission spectroscopy results. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00223727
Volume :
49
Issue :
25
Database :
Complementary Index
Journal :
Journal of Physics D: Applied Physics
Publication Type :
Academic Journal
Accession number :
116163293
Full Text :
https://doi.org/10.1088/0022-3727/49/25/255303