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The impact of in-plane biaxial compressive strain in [Si.sub.1-x][Ge.sub.x] layers on platinum germanosilicide (Pt[Si.sub.1-x][Ge.sub.x]) formation and the impact of Pt[Si.sub.1-x][Ge.sub.x] on the strain in [Si.sub.1-x][Ge.sub.x] are investigated. Results indicate that Pt[Si.sub.1-x][Ge.sub.x] does not induce strain in [Si.sub.1-x][Ge.sub.x] layers whether they are strained or relaxed before its formation, and the strain does not impact the structural and electrical properties of Pt[Si.sub.1-x][Ge.sub.x] films.

The temperature dependence of the electron mobility in n-channel metal-oxide-semiconductor field effect transistors (nMOSFETs) with Hf[O.sub.2] gate dielectrics is measured from the low temperature electron mobility measurements. The soft optical phonon scattering is damped by thin Si[O.sub.2] interface layers, so that the room temperature electron mobility values are competitive with values measured in nMOSFETs with SiON gate dielectrics.

The synthesis of a number of porphyrins that can be used for the study of the interplay of molecular design and charge-storage properties is described. Each porphyrin bears a formyl group distal to the surface attachment group for subsequent derivatization with a molecular entity that comprises the electrolyte.

The details of copper-catalyzed N-arylation of pi-excessive nitrogen heterocycles are specified. The coupling of either aryl iodides or aryl bromides with common nitrogen heterocycles (pyrroles, pyrazoles, indazoles, imidazoles, and triazoles) is successfully performed in good yield with catalysts derived from diamine ligands and CuI.

Seventeen porphyrins are synthesized to explore the use of porphyrins tethered to silicon via carbosilane linkages as well as two high-temperature processing methods are developed for rapid (minutes), facile covalent attachment to Si platforms. The findings indicate that porphyrins bearing a variety of functional groups can be covalently attached to Si via high temperature processing.

The effects of dc tunneling currents on low frequency charge pumping technique on thin stacked gate dielectrics are discussed. A procedure to remove these components from the measured substrate current is outlined.

The mobility behavior of MOSFET's with oxynitride gate dielectrics results from traps in the films. Gate dielectric fabrication involves the use of low-pressure rapid thermal chemical vapor deposition with SiH4, N2O, and NH3. An increase in nitrogen and hydrogen concentration reduces the peak electron mobility in n- and p-channel MOSFET's. Hole mobility decreases for all electric fields.

The rapid thermal processing, involving pre- and post-oxide deposition, improves the characteristics of composite gate oxides which act as gate dielectrics. The composite structure originating from pre-oxidation before the oxide deposition, and post-deposition oxidation in O2 and N2O, has low defect density and high mobility. N2O annealed oxides have high resistance towards hot carriers, low charge trapping capacity and low interface trap densities. The existence of nitrogen at the interface and the decreased interaction between nitrogen and hydrogen are responsible for the improved properties.

Silicon oxynitride films, formed by a low-pressure rapid thermal chemical vapor deposition (RTCVD) process, are useful as MOS gate dielectrics. The RTCVD uses SiH4, NH3 and N2O as the reactive gases. The deposition is possible at low temperatures and the films are a feasible alternative to a nitrided oxide as a gate dielectric in MOS technology. An analysis of MOS capacitors with n-channel and p-channel MOSFET's indicates an increase in fixed oxide charge with an increase in nitrogen and hydrogen content in the film.