1. Opening Through 200 mm Silicon Carbide Epitaxy
- Author
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Michaud, JF, Phung, LV, Alquier, D, Planson, D, Crippa, D, Azadmand, M, Mauceri, M, Preti, S, Puglisi, M, Vecchio, C, Crippa D., Azadmand M., Mauceri M., Preti S., Puglisi M., Vecchio C., Michaud, JF, Phung, LV, Alquier, D, Planson, D, Crippa, D, Azadmand, M, Mauceri, M, Preti, S, Puglisi, M, Vecchio, C, Crippa D., Azadmand M., Mauceri M., Preti S., Puglisi M., and Vecchio C.
- Abstract
In this paper, the performance of a new CVD reactor (called PE1O8) designed by LPE and developed in the European project REACTION to process uniform 4H-SiC homoepitaxy on 200 mm substrate is reported. Its tunable multi-zone injection system and new gas delivery configuration ensure the uniform gas distribution throughout the substrate. Excellent thickness and doping uniformity on 200 mm substrates are achieved with run-to-run variation less than 1.4% and 5.6% respectively.
- Published
- 2022