Opening Through 200 mm Silicon Carbide Epitaxy

In this paper, the performance of a new CVD reactor (called PE1O8) designed by LPE and developed in the European project REACTION to process uniform 4H-SiC homoepitaxy on 200 mm substrate is reported. Its tunable multi-zone injection system and new gas delivery configuration ensure the uniform gas distribution throughout the substrate. Excellent thickness and doping uniformity on 200 mm substrates are achieved with run-to-run variation less than 1.4% and 5.6% respectively.