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436 results on '"Meyer, B.K."'

1. Cathodoluminescence study of GaN epitaxial layers

Author

Cremades Rodríguez, Ana Isabel, Piqueras de Noriega, Javier, Xavier, C., Monteiro, T., Pereira, E., Meyer, B.K., Hofmann, D. M., Fischer, S., Cremades Rodríguez, Ana Isabel, Piqueras de Noriega, Javier, Xavier, C., Monteiro, T., Pereira, E., Meyer, B.K., Hofmann, D. M., and Fischer, S.

Abstract

© 1996 - Elsevier Science S.A.. International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 96) (4. 1996. El Escorial, España). A. Cremades thanks the Universidad Complutense for a predoctoral grant. This work has been partially supported by DGICYT Projects No. HP95-98B and PB93- 1256., GaN epitaxial layers have been investigated by cathodoluminescence (CL) in the scanning electron microscope (SEM). The most prominent feature of the spectra is a complex band at 2.2 eV, whose evolution with temperature and excitation density suggests emission mechanisms involving a deep center and donor-donor or donor-acceptor pairs. Time resolved photoluminescence (TRPL) measurements confirm the involvement of a deep center in the emission. CL images reveal that the centers responsible for this emission decorate grain boundaries. Emission bands al 2.87 eV and 1.31 eV have been also detected in the films., DGICYT (Spain), Universidad Complutense, Depto. de Física de Materiales, Fac. de Ciencias Físicas, TRUE, pub

Published
2023

40. A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films

Author

Meister, D., Bohm, M., Topf, M., Kriegseis, W., Burkhardt, W., Dirnstorfer, I., Rosel, S., Farangis, B., Meyer, B.K., Hoffman, A., Siegle, A., Thomsen, C., Christen, J., and Bertram, F.

Subjects
Chemistry, Physical and theoretical -- Research, Electrical conductivity -- Research, Gallium arsenide semiconductors -- Research, Physics
Abstract

A new study investigates secondary ion mass spectroscopy and temperature-dependent Hall-effect measurements on unintentionally doped GaN epitaxial films.

Published
2000

41. Postgrowth thermal treatment of Culn(Ga)Se2: characterization of doping levels in In-rich thin films

Author

Dirnstorfer, I., Hofmann, D.M., Meister, D., Meyer, B.K., Riedl, W., and Karg, F.

Subjects
Thin films -- Methods, Physics
Abstract

Optical and electrical measurements were conducted on annealed CuIn(Ga)JSe2 (CIGS) thin films having Ga content of 10%. Annealing of as-growth In-rich CIGS in air/oxygen at 400 degrees Celsius modifies the photoluminescence spectrum to a spectrum that is derived from as-grown Cu-rich CIGS. The annealing procedure decreases the donor density and the high compensation. This effect permits the analysis of the defect levels of In-rich CIGS which is not feasible in as-growth layers owing to the prevailing fluctuating potentials. The results are discussed.

Published
1999

46. Modified compensation model of CdTe

Author

Fiederle, M., Eiche, C., Salk, M., Schwarz, R., Benz, K.W., Stadler, W., Hofmann, D.M., and Meyer, B.K.

Subjects
Cadmium -- Models, Tellurium -- Models, Physics
Abstract

The conventional compensation model for the high resistivity characteristics of CdTe is based on the presence of a deep acceptor level of the cadmium vacancy in the center of the band gap. A new compensation model based on a deep intrinsic donor level was developed. The compensation model and an appropriate segregation model were used to compute axial distribution of resistivity which were compared with spatially resolved resistivity measurements.

Published
1998

47. Study of defects in electron irradiated CuInSe2 by positron lifetime spectroscopy

Author

Polity, A., Krause-Rehberg, R., Staab, T.E.M., Puska, M.J., Klais, J., Moller, H.J., and Meyer, B.K.

Subjects
Positrons -- Emission, Atomic spectroscopy -- Usage, Copper compounds -- Analysis, Physics
Abstract

Researchers examined bulk crystals of CuInSe2 using positron spectroscopy. They examined them in their natural state amd after low-temperature 2 MeV electron irradiation. The positron bulk lifetime of the unirradiated sample was 235 ps with no positron trapping. The average positron lifetime increased after irradiation indicating the appearance of divacancy-type defects. The defects disappeared after annealing below 250K. The average positron lifetime also increases above 450K.

Published
1998

48. Structural investigations of GaN grown by low-pressure chemical vapor deposition on 6H-SiC and Al(sub.2)O(sub.3) from GaCl(sub.3) and NH(sub.3)

Author

Kornov, S., Topf, M., Fischer, S., Meyer, B.K., Radojkovic, P., Hartmann, E., and Liliental-Weber, Z.

Subjects
Thin films -- Research, Gallium compounds -- Usage, Chemical vapor deposition -- Usage, Lattice dynamics -- Research, Nitrides -- Research, Physics
Abstract

GaN films grown using low-pressure chemical vapor deposition on 6H-SiC and Al(sub.2)O(sub.3) from GaCl(sub.3) and NH(sub.3) have been structurally investigated. Although small-lattice mismatch exists between GaN and 6H-SiC, the definite original surface roughness of the substrate material is thought to account for the decided interfacial roughness and the high density of threading dislocations which remains. Faceted holes, or pinholes, are seen in near-surface regions of the GaN layers. It appears there is a dislocation-independent mechanism for the pinhole formation.

Published
1997

49. Effects of microwave fields on recombination processes in 4H and 6H SiC

Author

Son, N.T., Sorman, E., Chen, W.M., Bergman, J.P., Hallin, C., Kordina, O., Konstantinov, A.O., Monemar, B., Janzen, E., Hofmann, D.M., Volm, D., and Meyer, B.K.

Subjects
Electromagnetic fields -- Research, Cyclotron resonance -- Research, Silicon carbide -- Research, Physics
Published
1997

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