Modified compensation model of CdTe

Authors :: Fiederle, M.
Eiche, C.
Salk, M.
Schwarz, R.
Benz, K.W.
Stadler, W.
Hofmann, D.M.
Meyer, B.K.
Source :: Journal of Applied Physics. Dec 15, 1998, Vol. 84 Issue 12, p6689, 4 p.
Publication Year :: 1998
Abstract: The conventional compensation model for the high resistivity characteristics of CdTe is based on the presence of a deep acceptor level of the cadmium vacancy in the center of the band gap. A new compensation model based on a deep intrinsic donor level was developed. The compensation model and an appropriate segregation model were used to compute axial distribution of resistivity which were compared with spatially resolved resistivity measurements.