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116 results on '"Mermet-Guyennet, M."'

2. Probabilistic approaches and reliability design of power modules

Author

Micol A., Martin C., Dalverny O., Mermet-Guyennet M., and Karama M.

Subjects
reliability, form, response surface, igbt, sn/ag solder., Industrial engineering. Management engineering, T55.4-60.8, Industrial directories, T11.95-12.5
Abstract

The weak point for the standard power IGBT modules in terms of reliability is thermal fatigue in solder joints due to the thermal stress induced by constitutive materials with different coefficients of thermal expansion (CTE). So far, many researches are aimed at defining accurate finite element simulation with constitutive equations of materials behaviour and fatigue failure relation connecting the inelastic strain and the number of cycles before failure. Even if these relations can be clearly identified, we can see that the validation of the finite element model is difficult due to the scatter of input data. In fact, the fatigue life of solder joints strongly depends on geometric shape, solders behaviour (due to the process) and applied load. The aim of this paper is to estimate the probability of failure of power module with the structural reliability methods. Thus the geometric, materials and loading variables are considered as random variables and the failure mode is modelled with the called limit state function. The two methods, response surface method and neural network method, are used here to evaluate the reliability of the lead-free solder. The sensitivities of the mean and the standard deviation for each random variable have been evaluated.

Published
2008
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3. Reliability of the connections used in IGBT modules, in aeronautical environment

Author

Zéanh A., Dalverny O., Karama M., Woirgard E., Azzopardi S., Bouzourene A., Casutt J., and Mermet-Guyennet M.

Subjects
power electronic packaging, constitutive laws, failures criteria, fem, doe., Industrial engineering. Management engineering, T55.4-60.8, Industrial directories, T11.95-12.5
Abstract

In this paper, two IGBT modules assembling technologies with double side cooling capabilities and high level of integration were proposed for aeronautic applications after a state of the art and failures analysis. These technologies are compared using design of experiment based on non-linear finite element analysis with various materials, with respect to their potential failures under thermal and power loading profiles. The configurations optimizing the lifetime and reliability level were pointed out by loading profile and failure mode. Recommendations were then done in order to choose the optimal configuration of assembly for each application. Finally, these design rules were followed by the study of parts dimensions effects on the design outputs in order to help dimensioning the IGBT modules.

Published
2008
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19. Conception and high temperature characterization of 10 kV 50 A 4H-SiC PiN diodes

Author

Choucoutou, B, Asllani, Besar, Phung, L, Fonder, J, Tournier, Dominnique, Mermet-Guyennet, M, Planson, Dominique, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), CALY Technologies, SuperGrid Institute SAS, and Planson, Dominique

Subjects
[SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience; This preliminary paper presents the early results obtained from the characterization of high voltage SiC PiN diodes. We first present the context of this work in Supergrid Institute. We then show the structure of these devices for which the conception was made by the Supergrid Institute and Caly Technologies. The fabrication was led with Caly Technologies and Ion Beam Services. The devices from the first run showed withstand voltages up to 5 kV and the devices have been characterized at temperatures as high as 200 °C. In forward mode, the 59 mm 2 diodes were characterized up to 50 A. The full paper will present results from the second run for which preliminary characterization has shown breakdown voltages up to 9 kV, and typical voltage drops lower than 4 V at 20 A in forward mode. The goal for the near future will more reliable process and devices in the long run. The market of SiC devices has grown during the past decade and transistors and diodes are now available at affordable cost. Although some high voltage devices have been made [1], the ones industrially available mostly are MOSFET and JBS diodes, up to 1700 V [2]. Although reliability studies remain to be done, unipolar devices seem to be suitable for this range of voltages and show good characteristics during conduction and upon switching. For the Supergrid applications and high power converters, it will be interesting to work with devices which show higher breakdown voltages, up to 10 kV [3]. At these voltages, a large part of the devices resistivity is due to their drift, which is the thick and lightly-doped region that permit to withstand the high electrical field caused by the high voltage. Plus, increasing the nominal temperature reduces the charge carrier mobility which is even more detrimental to the resistivity of unipolar devices that rely on field effect conduction. This led Supergrid to work on the conception and fabrication of SiC 10 kV PiN diodes with the Ampère lab and Caly Technologies. The main interest of bipolar devices compared to unipolar devices is the modulation of drift conductivity thanks to the injection of minority carrier [4]. If the carrier lifetime is high enough, the resistivity can be greatly reduced in high-injection mode of operation. If the lifetime is too low, dynamic characteristics could be similar to those observed in unipolar devices. The mechanism of field assisted current conduction is enhanced by the diffusion mechanism which is less sensitive to temperature and lead to lower increase of the resistivity with temperature in bipolar devices. The structure of the devices fabricated is presented in fig. 1. An N-type buffer is grown on the highly doped 4h-SiC substrate. A 110 µm thick and 7×10 14 cm-3 N-doped drift is then grown to complete the N-type cathode. The P-type anode is then made with two layers. The first anode layer grown on the drift is 1 µm thick and doped at 6×10 17 cm-3 while the second layer is 0.5 µm thick and highly doped at 5×10 19 cm-3 to guarantee a good quality P-type contact. Finite elements simulation showed that the maximum breakdown voltage with these parameters is around 13 kV. For the peripheral protection, we used a mesa etching coupled with a 400 µm JTE and 6 JTE rings realized with the same P-type implantations. Two sizes of diodes were made. The active area is 59 mm 2 for the large diodes and 9 mm 2 for the smaller ones. Some devices have been put in package by Deep Concept for high temperature characterization. The fig. 2 shows the typical results obtained in static characterization in reverse mode on small diodes. The characterization was done in the Ampère laboratory. The packaged devices were placed on a hot plate and the temperature specified is the case temperature. To avoid self-heating or further variation in temperature, characterization was performed in pulsed mode with 50 µs measurement.

Published
2018

20. Les points clefs de l'intégration des convertisseurs de puissance

Author

Meuret, R., Avenas, Yvan, Crébier, Jean-Christophe, Lembeye, Yves, Mermet Guyennet, M., Laboratoire de Génie Electrique de Grenoble (G2ELab), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS), Alstom, ALSTOM, and Garcia, Sylvie

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power, ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience

Published
2010

23. Etude probabiliste du comportement non-linéaire des brasures utilisées dans les modules de puissance

Author

Micol, Alexandre, Karama, M., Dalverny, Olivier, Martin, C., Mermet-Guyennet, M., Association Française de Mécanique, and Service irevues, irevues

Subjects
module de puissance, fiabilité, [PHYS.MECA]Physics [physics]/Mechanics [physics], [PHYS.MECA] Physics [physics]/Mechanics [physics], brasure Sn/Ag
Abstract

Colloque avec actes et comité de lecture. Internationale.; International audience; The objective of this paper is to develop a general framework or updating the predictions of models of structures using observations gathered from the monitoring of these structures. A general Bayesian updating scheme is developed, combining prior information on model parameters and monitoring data (including measurement uncertainties). A Markov chain Monte-Carlo (MCMC) sampling method is used for computing the posterior probability density functions (PDF) of input random variables. Then the updated PDF of the response quantities of interest is computed from the posterior PDFs. The approach is illustrated on the example of fatigue crack growth under homogeneous cyclic loading.

Published
2007

24. Modélisation avancée de module de puissance

Author

Austin, Patrick, De Maglie, Rodolphe, Sanchez, Jean-Louis, Schanen, Jean-Luc, Tounsi, Patrick, Lourdel, G., Mermet Guyennet, M., Jeannin, Pierre-Olivier, Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Power Electronics Associated Research Laboratory (PEARL), IUT de Génie Electrique de Tarbes-Alstom Transport (Alstom Transport)-Ecole Nationale d'Ingénieurs de Tarbes (ENIT), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Génie Electrique de Grenoble (G2ELab), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS), Pearl, pearl, Alstom, ALSTOM, Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Alstom Transport (Alstom Transport)-IUT de Génie Electrique de Tarbes-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale d'Ingénieurs de Tarbes (ENIT), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université de Toulouse (UT), Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power
Published
2005

26. Long-Term Reliability of Railway Power Inverters Cooled by Heat-Pipe-Based Systems

Author

Perpiñà, X., Jordà, Xavier, Vellvehi Hernández, Miquel, Rebollo, J., Mermet-Guyennet, M., Perpiñà, X., Jordà, Xavier, Vellvehi Hernández, Miquel, Rebollo, J., and Mermet-Guyennet, M.

Abstract

This paper analyzes the impact of a nonuniform temperature distribution inside insulated-gate bipolar transistor (IGBT) power modules on the reliability of railway power inverters. The interaction between the chosen cooling system (a heat-pipe-based one) and the power module is considered in detail. After showing the experimental setup and thermal conditions, thermal mapping inside the power module is carried out. Then, the effects of the thermal cycles on the constitutive elements of the IGBT module are pointed out when considering a real mission profile. Finally, the experimental results from the thermal cycles are linked to problems on the power-inverter reliability. Concretely, the thermal-grease distribution is analyzed on failed IGBT modules coming from the field, and the solder-delamination pattern observed in IGBT modules after endurance cycling tests is also reported.

Published
2011

27. Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions

Author

Perpiñà, X., Serviere, J. F., Urresti, J., Cortés, Ignasi, Jordà, Xavier, Hidalgo, Salvador, Rebollo, J., Mermet-Guyennet, M., Perpiñà, X., Serviere, J. F., Urresti, J., Cortés, Ignasi, Jordà, Xavier, Hidalgo, Salvador, Rebollo, J., and Mermet-Guyennet, M.

Abstract

This paper studies the overload turnoff failure in the insulated-gate bipolar transistor (IGBT) devices of power multichip modules for railway traction. After a detailed experimental analysis carried out through a dedicated test circuit, electrothermal simulations at device level are also presented. The simulation strategy has consisted in inducing a current and temperature mismatch in two IGBT cells. Results show that mismatches in the electrothermal properties of the IGBT device during transient operation can lead to uneven power dissipation, significantly enhancing the risk of failure and reducing the lifetime of the power module. Concretely, simulations qualitatively demonstrate that localized hot-spot formation due to a dynamic breakdown could lead to a second breakdown mechanism.

Published
2011

33. 3.3 kV IGBTs with an integrated anode voltage sensor

Author

Caramel, C., primary, Austin, P., additional, Sanchez, J.-L., additional, Imbernon, E., additional, Legal, J., additional, Hidalgo, S., additional, Flores, D., additional, Rebollo, J., additional, Millan, J., additional, Saiz, J., additional, and Mermet-Guyennet, M., additional

Published
2008
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