Search

Your search keyword '"Maxim Hayes"' showing total 2 results
Start Over Author "Maxim Hayes"
2 results on '"Maxim Hayes"'

1. Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells

Author

Hélène Lignier, Benoit Martel, Maxim Hayes, Etienne Pihan, Giri Wahyu Alam, Sébastien Dubois, Olivier Palais, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Phosphorus doped, Getter, Impurity, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, Boron, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], business.industry, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, 0210 nano-technology, business
Abstract

International audience

Published
2019

2. Study of non fire-through metallization processes of boron-doped polysilicon passivated contacts for high efficiency silicon solar cells

Author

Sébastien Dubois, Benoit Martel, Maxim Hayes, Audrey Morisset, Olivier Palais, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], 010302 applied physics, Amorphous silicon, Materials science, Passivation, Silicon, business.industry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, chemistry.chemical_compound, chemistry, Plasma-enhanced chemical vapor deposition, Physical vapor deposition, 0103 physical sciences, Optoelectronics, 0210 nano-technology, Silicon oxide, business, Boron, Layer (electronics), ComputingMilieux_MISCELLANEOUS
Abstract

We report on the investigation of a variety of metallization processes for hole selective passivating contacts, which consist in the combination of an ultra-thin silicon oxide (SiOx) interfacial film (grown by wet treatments) and a 25 nm thick boron (B) doped polysilicon layer (poly-Si). Plasma Enhanced Chemical Vapor Deposition (PECVD) of amorphous silicon (a-Si) followed by crystallization annealing is used for poly-Si elaboration. Optimization of metallization steps is required in order to (1) reach low specific contact resistances (ρc), and (2) preserve passivation quality along with structural integrity. This study focuses on the analysis of two processes: electron-beam evaporation deposition, and Physical Vapor Deposition (PVD) by sputtering. Different metals (silver (Ag) and aluminum (Al)) and annealing conditions are studied. Additionally, we investigated the effect of an additional a-Si capping layer on both (1) and (2) items. PVD of Ag appears as the most promising technique combining relatively low ρc (90 mΩ.cm2) as deposited with limited passivation degradations, and thus seems suitable for device integration as a full area back contact.

Published
2019

Catalog

Books, media, physical & digital resources
See catalog results