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Study of non fire-through metallization processes of boron-doped polysilicon passivated contacts for high efficiency silicon solar cells
- Source :
- 15th International Conference on Concentrator Photovoltaic Systems (CPV-15), 15th International Conference on Concentrator Photovoltaic Systems (CPV-15), 2019, Fes, France. pp.040006, ⟨10.1063/1.5123833⟩
- Publication Year :
- 2019
- Publisher :
- AIP Publishing, 2019.
-
Abstract
- We report on the investigation of a variety of metallization processes for hole selective passivating contacts, which consist in the combination of an ultra-thin silicon oxide (SiOx) interfacial film (grown by wet treatments) and a 25 nm thick boron (B) doped polysilicon layer (poly-Si). Plasma Enhanced Chemical Vapor Deposition (PECVD) of amorphous silicon (a-Si) followed by crystallization annealing is used for poly-Si elaboration. Optimization of metallization steps is required in order to (1) reach low specific contact resistances (ρc), and (2) preserve passivation quality along with structural integrity. This study focuses on the analysis of two processes: electron-beam evaporation deposition, and Physical Vapor Deposition (PVD) by sputtering. Different metals (silver (Ag) and aluminum (Al)) and annealing conditions are studied. Additionally, we investigated the effect of an additional a-Si capping layer on both (1) and (2) items. PVD of Ag appears as the most promising technique combining relatively low ρc (90 mΩ.cm2) as deposited with limited passivation degradations, and thus seems suitable for device integration as a full area back contact.
- Subjects :
- [PHYS]Physics [physics]
010302 applied physics
Amorphous silicon
Materials science
Passivation
Silicon
business.industry
chemistry.chemical_element
02 engineering and technology
021001 nanoscience & nanotechnology
7. Clean energy
01 natural sciences
chemistry.chemical_compound
chemistry
Plasma-enhanced chemical vapor deposition
Physical vapor deposition
0103 physical sciences
Optoelectronics
0210 nano-technology
Silicon oxide
business
Boron
Layer (electronics)
ComputingMilieux_MISCELLANEOUS
Subjects
Details
- ISSN :
- 0094243X
- Database :
- OpenAIRE
- Journal :
- 15th International Conference on Concentrator Photovoltaic Systems (CPV-15)
- Accession number :
- edsair.doi.dedup.....aebbaedc406235b72d36c72140e05109