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2. Growth of p-type and n-type m-plane GaN by molecular beam epitaxy

Author

McLaurin, M., Mates, T.E., Wu, F., and Speck, J.S.

Subjects
Molecular beams -- Analysis, Epitaxy -- Analysis, Semiconductor doping -- Analysis, Physics
Abstract

A study demonstrates plasma-assisted molecular beam epitaxial growth of Mg-doped, p-type and Si-doped, n-type m-plane GaN on 6H m-plane SiC. Temperature dependent Hall effect measurements indicate that the Mg-related acceptor state in m-plane GaN is the same as that exhibited in c-plane GaN.

Published
2006

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