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773 results on '"Masuda, Atsushi"'

6. Investigation of the effect of plasmonic Au nanoparticles on crystalline Si solar cells.

Author

Jonai, Sachiko, Kobayashi, Komei, Nakamura, Kyotaro, Masuda, Atsushi, Shinbo, Kazunari, Kato, Keizo, and Baba, Akira

Abstract

In order to increase the photocurrent of tandem solar cells with a silicon (Si) solar cell as the bottom cell, we investigate the relationship between the localized surface plasmon resonance effect of gold nanoparticles (AuNPs) and the arrangement of AuNPs onto solar cells. AuNPs were deposited on P-type crystalline Si (c-Si) cells and Si heterojunction (SHJ) type cells. To obtain the localized surface plasmon resonance effect, the shape, size, and arrangement of the nanostructures are important. Especially, arrangement of AuNPs onto solar cells was inquired in this study because these parameters must be adjusted appropriately to produce a plasmon resonance in a specific wavelength range. It was found that the plasmon resonance effect is significant when deposited on the surface of c-Si cell rather than on top of the Ag electrode. AuNPs deposition on the c-Si cell surface leads to not only the localized surface plasmon resonance effect but also improvement in charge transport between the c-Si cell surface and Ag electrode. However, in the SHJ-type cells, the plasmon resonance effect was not observed because the surface layer was composed of a W-doped In2O3 (IWO) layer. [ABSTRACT FROM AUTHOR]

Published
2024
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7. Potential-induced degradation phenomena in single-encapsulation crystalline Si photovoltaic modules.

Author

Qin, Yiming, Yonemoto, Asahi, Gotoh, Kazuhiro, and Masuda, Atsushi

Abstract

This paper particularly explains potential-induced degradation (PID) of wafer-based standard p-type crystalline silicon technology. We present a single-encapsulation method that is useful for simulating PID in the laboratory to facilitate microanalyses of module-level solar cells. The PID testing is performed for the module with single-encapsulation and conventional modules. Their current–voltage characteristics and electroluminescence images are investigated before and after the PID tests. As described herein, we infer that the single-encapsulation modules generate PID almost in the same way as conventional modules do, and that the degradation trend is almost identical to that of conventional modules. Results of PID recovery tests indicate that the time necessary for PID recovery is always less than that for PID generation, irrespective of the encapsulation method. [ABSTRACT FROM AUTHOR]

Published
2024
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21. Second-stage potential-induced degradation of n-type front-emitter crystalline silicon photovoltaic modules and its recovery

Author

Ohdaira, Keisuke, Komatsu, Yutaka, Yamaguchi, Seira, Masuda, Atsushi, Ohdaira, Keisuke, Komatsu, Yutaka, Yamaguchi, Seira, and Masuda, Atsushi

Abstract

We investigate the second-stage potential-induced degradation (PID) of n-type front-emitter (n-FE) crystalline silicon (c-Si) photovoltaic (PV) modules. The PID of n-FE c-Si PV modules is known to occur in three stages under negative bias stress. The second-stage PID is characterized by a reduction in fill factor (FF), due to the invasion of sodium (Na) into the depletion region of a p+–n junction and resulting increase in recombination current. The second-stage PID shows a curious independence on a negative bias voltage for the PID stress. This may indicate that the Na inducing the FF reduction comes not from the cover glass but originally exists on and/or near the cell surface. The FF reduction is recovered quite rapidly, within a few seconds, by applying a positive bias to the degraded cell. The recovered n-FE c-Si PV modules show more rapid degradation if they receive the negative bias stress again, which can be explained by Na remaining in the p+ emitter.

Published
2023

23. High yield production of norovirus GII.4 virus-like particles using silkworm pupae and evaluation of their protective immunogenicity

Author

Masuda, Akitsu, primary, Man Lee, Jae, additional, Miyata, Takeshi, additional, Sato, Shintaro, additional, Masuda, Atsushi, additional, Taniguchi, Masahiro, additional, Fujita, Ryosuke, additional, Ushijima, Hiroshi, additional, Morimoto, Keisuke, additional, Ebihara, Takeru, additional, Hino, Masato, additional, Kakino, Kohei, additional, Mon, Hiroaki, additional, and Kusakabe, Takahiro, additional

Published
2023
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27. Activities for diversity in the physics field in Japan.

Author

Masuda, Atsushi, Chikumoto, Noriko, Ichikawa, Atsuko, Hiyama, Emiko, and Itakura, Akiko N.

Subjects
*COVID-19 pandemic, *PHYSICS
Abstract

Current topics on diversity and related issues in the Japan Society of Applied Physics (JSAP) and the Physical Society of Japan (JPS) are introduced. Women members assumed the presidency in both societies for "state years." Awards in both societies encourage activities for women members. The influence of the COVID-19 pandemic is also discussed. [ABSTRACT FROM AUTHOR]

Published
2023
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28. Effect of temperature and pre-annealing on the potential-induced degradation of silicon heterojunction photovoltaic modules

Author

Xu, Jiaming, HUYNH, Tu Thi Cam, Masuda, Atsushi, Ohdaira, Keisuke, Xu, Jiaming, HUYNH, Tu Thi Cam, Masuda, Atsushi, and Ohdaira, Keisuke

Abstract

We investigate the effect of temperature and pre-annealing on the potential-induced degradation (PID) of silicon heterojunction (SHJ) photovoltaic (PV) modules. SHJ PV modules show a faster decrease in short-circuit current density (Jsc) at higher temperatures during PID tests. We also observe a complex relationship between the degree of the Jsc decrease and temperature during the PID tests. Pre-annealing before the PID tests at sufficiently high temperatures leads to the complete suppression of the PID of SHJ PV modules. The decrease in Jsc is known to be due to the chemical reduction of indium (In) in transparent conductive oxide (TCO) films in SHJ cells, in which water (H_2O) in SHJ modules is involved. These indicate that H_2O may out-diffuse from the SHJ PV modules during a PID test or pre-annealing at sufficiently high temperatures, by which the chemical reduction of indium in TCO into metallic In is suppressed., identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/18178

Published
2022

29. Influence of light irradiation on the charge-accumulation-type potential-induced degradation of n-type front-emitter crystalline Si photovoltaic modules

Author

Zhao, Rongrong, Huynh, Tu Thi Cam, Masuda, Atsushi, Ohdaira, Keisuke, Zhao, Rongrong, Huynh, Tu Thi Cam, Masuda, Atsushi, and Ohdaira, Keisuke

Abstract

We investigated the influence of light irradiation on the charge-accumulation-type potential-induced degradation (PID) of n-type front-emitter (n-FE) crystalline silicon (c-Si) photovoltaic (PV) modules. A PID test under one-sun irradiation leads to faster reductions of short-circuit current density (J_) and open-circuit voltage (V_) compared to the case of a PID test in the dark. This indicates that light irradiation accelerates the charge-accumulation-type PID of the n-FE PV modules. The J_ and V_ reductions become slower under irradiation without ultraviolet (UV) light, showing almost the same time dependence as the PID test in the dark. The acceleration of PID by the addition of UV light may be explained by the excitation of electrons at K^0 centers in silicon nitride (SiN_x) and their faster drift to the surface by electric field applied to SiN_x., identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/18173

Published
2022

35. High Protein Diet Feeding Aggravates Hyperaminoacidemia in Mice Deficient in Proglucagon-Derived Peptides

Author

Ueno, Shinji, primary, Seino, Yusuke, additional, Hidaka, Shihomi, additional, Maekawa, Ryuya, additional, Takano, Yuko, additional, Yamamoto, Michiyo, additional, Hori, Mika, additional, Yokota, Kana, additional, Masuda, Atsushi, additional, Himeno, Tatsuhito, additional, Tsunekawa, Shin, additional, Kamiya, Hideki, additional, Nakamura, Jiro, additional, Kuwata, Hitoshi, additional, Fujisawa, Haruki, additional, Shibata, Megumi, additional, Takayanagi, Takeshi, additional, Sugimura, Yoshihisa, additional, Yabe, Daisuke, additional, Hayashi, Yoshitaka, additional, and Suzuki, Atsushi, additional

Published
2022
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50. Influence of light illumination on the potential-induced degradation of n-type interdigitated back-contact crystalline Si photovoltaic modules

Author

Xu, Yuansong, Masuda, Atsushi, Ohdaira, Keisuke, Xu, Yuansong, Masuda, Atsushi, and Ohdaira, Keisuke

Abstract

We investigate the potential-induced degradation (PID) of n-type interdigitated back-contact (IBC) crystalline Si (c-Si) photovoltaic (PV) modules under a negative bias stress and the influence of light illumination on the PID. IBC PV modules show PID characterized by reductions in short-circuit current density (J_) and open-circuit voltage (V_) under negative bias stress, while no fill factor (FF) reduction is observed. The degradation may originate from sodium (Na) introduction into c-Si and resulting enhancement of carrier recombination on the surface of the IBC cells. 1-sun light illumination during the negative-bias PID test results in less severe reductions in J_ and V_. A reduction in an electric field in the surface Si nitride (SiN_x) film due to carrier generation in the SiN_x and resulting increase in its conductivity is one of the possible explanations for the mitigation of the Na-related PID., identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/18021

Published
2021

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