Search

In this paper, an attempt has been made for quantum-dot cellular automata (QCA) based design of TRNG (True Random Number Generator) to support the implementation of developed nano communication protocol targeting more secured operation over automated teller machine (ATM). TRNG is an ingenious design can generate non-deterministic and distinctive stream digital bit, and a major aspirant for any secured cryptography process. Here, the mode of design is using QCA technology due to its advantageous aspects of consuming low-design area and ultra-low power during high-frequency operations. Overall the functional verification of our proposed setup is carried out using QCA Designer 2.0.3 where from its efficacy is rightly depicted.

As the technology advances, the modern trend of lifestyle also advances. The doorbell has an important responsibility in home safety; it is one of the competent and steady systems needs to be developed for better safety which could be access at a low cost. In this era, there are many doorbells systems doing different operation. This paper focuses on touchless type automatic doorbell systems which will ring the bell automatically when a visitor approaches near the door. This system is intended to people, and due to the spread of COVID-19 pandemic situation, it would be one of the safety steps that can be taken against corona. People are now more careful about their everyday work and their family. In the year 2020, the whole world is trapped in unprecedented COVID-19 pandemic. The situation takes away all our normal lifestyle, and all the researches are going on in controlling the situation and finding a new way of life. In this work, the author is trying to establish a contactless door alarm for the household application. Motivation behind the work is that due to the Corona virus spread around the world, we have to take utmost care in every step of our life. If we use the normal door alarm, then there will be the issue of contact for every people who will arrive in. But if there will be a replacement of the conventional door alarm with the help of antenna technology, then it can solve the issue with a contactless alarm. In this paper, the author have used the HFSS software for the proposed antenna.

In this article, quantum circuit-based secure communication architecture has been envisioned. Herein, all the proposed circuits and architecture are verified by IBM Qiskit and established on the quantum nanostructure. The salient goal of this hardware-based cryptographic structure in the quantum domain is to attain a diversified invulnerable quantum communication arrangement through a commendable post-CMOS technology. This architecture consists of a novel quantum random number generator (QRNG) and swap gate-based quantum shuffler. In our intended framework for cryptographically secured communication model as well as its implementation through a novel quantum encryption–decryption prototype by the random bits extracted from quantum Hadamard gates, rotation gate is (Rz) postulated on QRNG.

Quantum-dot cellular automata (QCA) technology leads to rapid high-density combinatory low power exploitation to realize the reversible logic circuit in the nanoscale era. Reversible logic is an alternative to overcome excess energy indulgence of irreversible process. This paper illustrates a cost-effective, energy-efficient Universal Reversible Logic Gate in QCA framework which is capable of designing power analysis attack resistable hardware cryptographical circuit. The proposed (URLGs: U1 and U2) has been tested with simulator QCADesigner V2.0.3, outshined the existing pattern relating to the area, gate count, garbage count, and quantum cost. We found 37.5% garbage minimization is achieved compared to NFT, which is utmost minimization of garbage ever reported in QCA literature. Thirteen three variable standard Boolean functions are considered as logic benchmarks to guesstimate the capability and efficiency of proposed URLG in QCA circuit implementation and synthesizing logic gates. In average, our proposed U2 achieved 36.66% improvement in energy dissipation for different kink energy ratios over early reported work.

The information are need to modulate using irreproducible and unpredictable digital bit stream to get a secure digital communication systems. Hence, True random number generator (TRNG) is a significant aspirant in digital circuit to yield unpredictable digital bit stream. In this assignment self starved feedback SRAM based TRNG is proposed in quantum cellular automata (QCA) technology. Moreover, QCA technology is adopted to design TRNG components due to its features like ultra low power dissipation, low area and ultra high operating frequency. The proposed TRNG is comprised of self starved feedback circuit and floating clock generator. Again, the basis of self starved feedback circuit is a single bit QCA SRAM cell, which extracts the random digital bit. Furthermore, to enhance the randomness, floating clock generator is implemented across self starved feedback circuits input. The functionality of proposed TRNG is accomplished through QCA Designer tool and its architecture is also passed NIST statistical test of randomness. Hence proposed 8 bit TRNG can be interpreted as a novel contender for security applications due to its 14.82 GHz operating frequency, 0.36 μm2 area, latency of 1 QCA clock cycle, 28.53 meV average power dissipation and high tail probability of NIST test battery report in QCA technology.

Information processing and conventional computing are usually resource constrained; evermore they need to operate in a physically suspicious environment. Consequently, communication architectures, protocol and its security aspects have been the focus of many recent research works. Our proposal demonstrates how to amend this vulnerable circumstance through a three-stage security scheme in quantum-dot cellular automata (QCA) based nano-architecture. The primary objective of this hardware-based cryptographic architecture using QCA is to intend a distinctly secure communication architecture comprising less number of QCA cells, which enchant the comparative performance investigation along with the power-area constraints. In our proposed design the random bits are extorted from an asymmetrically arranged crossed loop TRNG where the seed circuits are used to boost the volatility of initiated number sequences as well as the distinction of the random numbers. In this work, a novel encryption-decryption prototype for a secure communication system has been implemented. The simulation results are obtained from QCADesigner tool v2.0.3, which fruitfully agreed with the industry standard. An intact evaluation of the proposed TRNG and the comparative analysis with a recent work of TRNG has been authorized by the 7.79% improvements in average energy dissipation for different Kink energy ratio. Altogether the proposed architecture and its contemporary implementation in QCA framework can be recognized by means of the advantages in 7.02% circuit complexity, 11.53% area, and 13.77% average leakage power dissipation with respect to the recent work of TRNG. Thus our proposed novel TRNG based hardware cryptographic architecture can be considered as a potential next-generation network-on-chip (NoC) realization for a large-scale cryptosystem in QCA technology.

A modified quantum drift-diffusion (QDD) model is developed for non-linear analysis of SiC (4H, 6H and 3C polytypes) pin semiconductor diodes at W-band frequency regime. Effects of incorporation of a buffer layer (n-type), in between substrate and low doped active region of the hexagonal (4H and 6H) pin (p++-p+-n−-n-n++) vertical mesa structure is thoroughly studied in this paper for the improvement of MM-wave performance of the single device. Also, a thin layer of Ge has been introduced in between Si substrate and n+ cubic-SiC layer in 3C-SiC pin-device for minimising the lattice mismatch issue in between Si/3C-SiC interface. The comprehensive analysis establish that the forward characteristics, reverse recovery time (1 ns) and breakdown voltage (171 Volt) in case of 4H-SiC device are quite good in comparison to its cubic (3C) and other hexagonal (6H) counterparts, however, the switching characteristics of 3C-SiC pin diode array is comparatively better than its hexagonal counterparts. This observation could be explained in terms of lowest series resistance in 3C-SiC based single pin device that has been achieved by incorporating Ge layer in mesa structure. The authors have made a comparative analysis among SPST, SPDT and SPMT pin switches made up with 4H, 6H and 3C-SiC poly-types. At 94 GHz, W-band central frequency, series resistance in 4H-SiC single device is 0.59 Ω, whereas, the same is much lower (0.27 Ω) in case of 3C-SiC. Insertion loss and isolation in 3C-SiC pin array of switches are found to be 0.18 dB and 38 dB (SPST switch), 0.19 dB and 67 dB (SPDT switch), 0.20 dB and 90 dB (SPMT shunt type switching array) and 0.23 dB and 74 dB (SPMT series-shunt type switching array). This newly proposed QDD model validation is done through comparative studies between experiment and analytical results for 4H-SiC SPST switches in low-frequency Microwave region. The validated QDD model, coupled with PSpice and Comsol Multi-physics simulator, then used for designing of the W-band devices and corresponding switches. However, as far as author’s knowledge is concerned, no experiment is yet done with SiC pin diodes at W-band frequencies, in literature for comparison. From simulation point of view also such an extensive study on hexagonal and cubic SiC pin diode switches at W-band region has not yet been done by any other researcher group. This paper, for the first time, establishes the feasibility and potentiality of IV-IV group semiconductor based pin (p++-p+-n−-n-n++) switches for W-band applications. Comparative analysis also reveals that 3C-SiC based shunt type pin (p++-p+-n−-n-n++) SPMT switches are the best for MMW-communication systems. Thermal modelling of the designed devices are also compared and reported in this paper. The quasi-3D thermal analysis is done to optimize the mesa and heat-sink diameter/dimensions so as to minimize the thermal runaway issues. The results may further be used for developing low-cost and fast semiconductor switches for potential application in THz communication systems.

Nowadays, electrical switching circuits depend on PIN diode extensively. Non-invasive biomedical circuits are greatly influenced by the sensitivity of biosensors. The optical sensors are the key components in those circuits. The potential of PIN devices such as opto-sensors is studied in this paper. Si technology is the most mature one in modern industry. Therefore, the opto-sensitivity and photo-responsivity of the devices are studied by developing a quantum modified drift diffusion model. In this paper, the characteristics of PIN diode are studied which is made of silicon with a very small amount of carbon doping within it, and this strained material shows immense promise to the field of MMW and THz science and technology, and more precisely in biomedical domain for its modified band structure and electron transport characteristics, due to incorporation of artificial strain within this. Authors have studied the prospect of carbon doping selectively in Si PIN devices so as to increase the sensitivity of its application.

Tile Nanostructures in Quantum-dot Cellular Automata (QCA) are proved to be a robust and reliable structure to fabricate the logic device. In this scientific attempt, we have focused on N-variable symmetric Logic function synthesis in Quantum-dot Cellular Automata with tile nanostructure. Coupled Majority-minority voter (CMmV) voter is applied to implement 2 –variable and 3 –variable logic syntheses in Quantum-dot Cellular Automata. The N-variable symmetric logic function is applicable to implement any logic circuit. Two and three variables Quantum-dot Cellular Automata symmetric logic functions are synthesized in this article. Hence any digital logic circuit can be implemented with proposed Coupled Majority-minority voter (CMmV).

Photo-sensors are integral part of different bio-medical diagnostic equipment. Each type of bio-molecules possess unique spectral fingerprint in visible wavelength region of electro-magnetic spectrum. Now-a-days, the enhancement of quantum-efficiency and photo-responsivity of such bio-medical opto-sensors, for accurate identification of virus/anti-bodies in blood by optical means, is a big challenge to medical-device Engineers. The authors have addressed this issue in this research paper by proposing a novel structure of asymmetrical Si/4H-SiC super-lattice pin diode array for the development of high-sensitive visible light (300–800 nm) sensor on native substrate. The simulation experiment is carried out by developing a generalized large-signal quantum modified drift–diffusion simulator incorporating three different modes of carrier generation-recombination under light and dark conditions: avalanching, tunneling and photo-irradiation. The validity of the model has been established by comparing the simulation results with those of experimental observations. A good agreement between theory and experiment, under similar biasing conditions, establishes the validity of the developed model. The characteristics analysis depicts that the quantum efficiency of the designed single photo-sensor is ~ 65% within 400–700 nm wavelength region, whereas, the same enhances to nearly ~ 90% with a 3 × 3 photo-sensor array based on asymmetrical super-lattice single pin devices. In visible wavelength region, the simulated photo-sensors (both single and array) have demonstrated significant photo responsivity. The photo-responsivity values, at 500 nm wavelength of incident radiation, are observed to be 0.65 A/W for a single photo-diode and 0.85 A/W for a 3 × 3 combination of photo-diode array. This clearly establishes the potentiality of the asymmetrical super-lattice pin-array as a visible photo-sensor for future application in developing medical instruments. A comparative analysis of Si and Si/4H-SiC asymmetrical super-lattice photo-sensors establishes the superiority of the later as a high-sensitive visible light-sensor in terms of better photo-responsivity and quantum efficiency. To the best of authors’ knowledge, this is the first report on Si/4H-SiC super-lattice pin photo-sensor array in the visible range of optical irradiation. The experimental feasibility of the device and a proposed circuit for future bio-medical implementation are also incorporated in the present research-paper for further development.

This article reports the synthesis of ZnS quantum dots (QDs) embedded in polyvinylpyrrolidone matrix via a simple chemical technique and its novel application as a nano-light-emitting device. The synthesized specimen has been characterized by using UVVis spectroscopy, X-ray diffraction study, atomic force microscopy, and high-resolution transmission electron microscopy. These studies indicate the sizes of QDs to be within 8nm. The prepared QD samples have been examined in a fabricated ZnOQD-based nano-light-emitting device by exploring the variation of electroluminescence (EL) (light emission phenomenon) with supply voltage at room temperature. The almost linear variation of EL intensity with voltage is obtained for a specific range of voltage, which makes ZnS nanoparticles suitable for light-emitting devices.

A physics-based Quantum-Modified CLassical Drift–Diffusion (QMCLDD) non-linear mathematical model has been developed for design and characterisation of GaN/AlGaN asymmetrical superlattice pin based single-pole single-throw (SPST) and single-pole multi-throw (SPMT) switches for sub-MM wave communication systems. The simulator has incorporated several important physical phenomena that arise in superlattice structure, including quantum confinement effects, generation-recombination and tunnelling generation of carriers as well as scattering limited carrier mobility and velocity in GaN/AlGaN structure. In order to reduce the dislocation density and in turn the series resistance in GaN/AlGaN heterostructure, thin AlN nucleation layer and a buffer layer are considered in the simulation. It is observed that the RF series resistance of the pin device, operating around 0.2 THz frequency regime, reduces in case of proposed superlattice structure. The advantages of super-lattice pin diode over the conventional Si devices are the faster reverse recovery time (~ 9 vs 35 ns) and lowering of forward RF series resistances (0.39 vs 1.20 Ω). This study also reveals that SPST and SPMT switches made up with super-lattice devices are characterized by low insertion loss (~ 0.13 and 0.15 dB, respectively) and high isolation (~ 65.4 and 82.5 dB, respectively). A good agreement between theory and experiment establishes the superiority of the present model over the others. A comparative analysis of Si and GaN/AlGaN super-lattice pin SPST and SPMT switches establishes the potential of the later for its application in high-frequency THz-communication. In addition to this, a detailed thermal modelling of the device has also been done to make the analysis more realistic. The junction temperature of the designed GaN/AlGaN superlattice pin switch will be as high as 377 K, which is quite moderate compared to its flat profile counterpart. To the best of authors’ knowledge, this is the first ever report on QMCLDD non-linear modelling of pin SPST and SPMT switches (series-shunt combination) at THz-arena.

In this paper, Quantum Corrected (QMC) horizontally doped Si/4H-SiC multi layers avalanche photo sensor (APS) has been developed for application in bio-medical domain. The photo electric characteristics of the developed photo sensor has been analysed in terms of photo current, photo responsivity and quantum efficiency in 300nm – 900nm wavelength region. These all parameters have been improved considerably by incorporating Si/4H-SiC multi layers structure into the active region of the devices. Recently demand of such bio-medical photo-sensors is increasing significantly for identification of anti-bodies and virus in human blood. The validity of newly developed model has been established by comparing the simulated result with the reported experimental data. The photo electrical characteristics analysis of the designed QMC model-based Si/4H-SiC multi layers avalanche photo sensor depict that the photo current is ~20μA whereas the photo responsivity and quantum efficiency are ~0.65A/Wand ~0.67 respectively. The results clearly establish the superiority of proposed photo-sensor for developing medical instruments in visible wavelength region (300nm – 900nm).

Ternary quantum dot cellular automata (tQCA) is an emerging as well as an interesting field of research area after successful fabrication of binary QCA. Ternary logic is a critical choice for solving greater data storage, faster arithmetic operation on complex data, and so on. In this paper, tQCA basic logic gates like ternary AND, OR, NOT gates and buffers have been reported. tQCA layout for basic logic gates is simulated with tQCA simulation software (TQCA_1.7.0.2). Involvement of coulombic interactive force is also explored as physical proof of NOT gate operation in eight-dot tQCA device model.

True random number generator, commonly known as TRNG, is an important candidate in today’s cryptography process. TRNG is only innovative design which can generate non-deterministic and unique digital bit stream to any communication systems or secured system. Quantum cellular automata (QCA) technology is adopted to design TRNG due to its low area, ultra high operating frequency, and low power dissipation. This article presents a QCA majority voter-based TRNG, which is comprised of crossed loop circuit and seed circuit. The random bits are extracted from crossed loop circuit which is composed of “OR” gate. Again the seed circuits are used here to enhance the unpredictability of generated number sequence and quality of random number. The proposed TRNG design is verified through QCADesigner tool 2.0.3, and its architecture is passed industry standard successfully. In area, latency, and energy point of view, the proposed 8-bit TRNG is consumed 0.36 um2 area, 1 QCA clock cycle latency, and 49.7 mev energy (per bit). So, proposed TRNG will be interpreted as a promising design in next-generation cryptography domain.

The availability of natural non-conventional resources such as wind, water, sunlight, and other renewable sources of energy has been a boon to the human being and the society. If these sources of energy can be utilized in a proper way with energy conservation policy, a pollution-free environment can be achieved to change the world and society. Scientific process implementation of the sources can create an eco-friendly world along with the sustainable source of development. Nature has gifted the numerous numbers of scopes and a wide range of resources such as solar, wind, water, tidal, and geothermal. In this project, the application of wind energy is the prime concern through which the other natural components can be used to drive a more amount of energy for our daily needs and to reduce the harmful consequence as an absorption by the ecosystem. In this era of the advanced technological environment, our modern life has become more advanced in the fields of operating various plant operations and daily life needs too. But sometimes, it really affects our earth and depletes other natural components which can cause the natural disaster or can unbalance the ecosystem. Thus, to overcome the problem, people should be more aware and take a step forward to the planned use of natural energy sources. The project work is mainly concerned about the non-conventional sources of energy and the effective use of it to extract energy through several mechanisms. It also focuses on the distribution and access to groundwater for drinking and irrigation purpose. The idea is to solve some of the problems which are faced by human beings in daily life.

Figure of merits are key performance indicators of any RF device and can be used to assess the performance of the heterojunction transistors operating at very high frequency range. For HBT, stability and power gain are the key figures of merits to consider. The Agilent Advanced Design System has been used here to simulate the frequency response of Si/SiGe HBT with Mextram model. The results of the simulation are used further to establish the figure of merits for the Si/SiGe HBT in the GHz frequency ranges that can be useful for operations at wireless and satellite communication systems.

Breakdown voltage and power dissipation of a semiconductor device determine the range of voltage, frequency and temperature over which it can operate keeping in track its electrical and optical characteristics. The power dissipation of p-i-n diode has been studied using thermal modelling with heat sink. The electrical properties of the switch are determined by its internal resistance and depend on geometrical structure of the device. This type of switch can control the high power from k u band through millimetre wave frequency in the verity of switch configuration such as single-pole single-throw switch (SPST), single-pole double-throw switch (SPDT) and single-pole multi-throw switch (SPMT). It offers high breakdown voltage for which it enables to operate at high temperature and becomes capable to handle the high power.

The theoretical analysis of electrical properties of MESFETs has been carried out with different materials of narrow as well as wide energy bandgap III–V binary compound semiconductors. The gate-to-source capacitance (C gs) and transconductance (g m ) have been studied as a function of gate-to-source voltage (V gs). It is revealed that wide bandgap semiconductor is best suited at high frequency because it has lower capacitance. The transconductance also depends on temperature and decreases with temperature. This is because of the increasing scattering phenomenon within the channel. The wide bandgap semiconductors offer higher transconductance which enables them to be used as high-speed switch. The aim of this work is to improve the understanding of MESFET device performances based on different III–V binary compound materials and also to find out the most suitable material combination for MESFET.

High-Electron-Mobility-Transistor can operate with very small gate length below 0.5 μm and it attracts applications at very high frequency - in the THz range. In particular HEMTs have shown power gain at frequencies greater than 1THz.. This device has an improved trans-conductance and carrier saturation velocity. HEMT offers high power efficiency, greater consistency and broader bandwidth in wireless communication system. The polarization and power characteristics of the AlGaN/AlN combination have been presented in this paper.