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ZnS Quantum Dots Based Voltage-Sensing Light-Emitting Device

Authors :
G. Gope
Abhigyan Ganguly
Maitreyi Ray Kanjilal
Siddhartha Sankar Nath
Source :
IEEE Sensors Letters. 2:1-4
Publication Year :
2018
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2018.

Abstract

This article reports the synthesis of ZnS quantum dots (QDs) embedded in polyvinylpyrrolidone matrix via a simple chemical technique and its novel application as a nano-light-emitting device. The synthesized specimen has been characterized by using UVVis spectroscopy, X-ray diffraction study, atomic force microscopy, and high-resolution transmission electron microscopy. These studies indicate the sizes of QDs to be within 8nm. The prepared QD samples have been examined in a fabricated ZnOQD-based nano-light-emitting device by exploring the variation of electroluminescence (EL) (light emission phenomenon) with supply voltage at room temperature. The almost linear variation of EL intensity with voltage is obtained for a specific range of voltage, which makes ZnS nanoparticles suitable for light-emitting devices.

Details

ISSN :
24751472
Volume :
2
Database :
OpenAIRE
Journal :
IEEE Sensors Letters
Accession number :
edsair.doi...........114816846d5954900068f5b413cd14eb
Full Text :
https://doi.org/10.1109/lsens.2018.2862915