1. Study of electron-beam evaporated Sn-doped In2O3 films
- Author
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E. E. Khawaja, S.M.A. Durrani, J. Shirokoff, G.D. Khattak, M.A. Salim, M.S. Hussain, and M.A. Dams
- Subjects
Diffraction ,Materials science ,X-ray photoelectron spectroscopy ,Renewable Energy, Sustainability and the Environment ,Electrical resistivity and conductivity ,Doping ,Analytical chemistry ,Transmittance ,Atomic ratio ,Rutherford backscattering spectrometry ,Electron beam physical vapor deposition ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials - Abstract
Electron beam evaporated Sn-doped In2O3 films have been prepared from the starting material with composition of (1 − x) In2O3 − -x SnO2, where x = 0.0, 0.010, 0.025, 0.050, 0.090, and 0.120. X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and X-ray diffraction analysis were carried out on the films. Luminous transmittance and electrical resistivity of the films, show weak dependence on x. The composition of the film ([Sn][In] atomic ratio) was found to differ from that of the starting material. In fact, the atomic ratio was higher in the film than in the starting material by a factor which increases with x (ranging from 1.0 to 2.6). There is a relatively broad resistivity minimum in the layer atomic ratio range SnIn = 0.06 − -0.09. These results compare well with those reported in the literature for Sn-doped In2O3 films, prepared by pyrolitic (spray) method.
- Published
- 1996
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